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APT45GP120B2DQ2G

APT45GP120B2DQ2G
Mfr. #:
APT45GP120B2DQ2G
Fabricante:
Microchip / Microsemi
Descripción:
IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
APT45GP120B2DQ2G Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
APT45GP120B2DQ2G DatasheetAPT45GP120B2DQ2G Datasheet (P4-P6)APT45GP120B2DQ2G Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Pastilla
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
T-Max-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1.2 kV
Voltaje de saturación colector-emisor:
3.3 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
113 A
Pd - Disipación de energía:
625 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Embalaje:
Tubo
Corriente continua de colector Ic Max:
113 A
Altura:
5.31 mm
Longitud:
21.46 mm
Rango de temperatura de funcionamiento:
- 55 C to + 150 C
Ancho:
16.26 mm
Marca:
Microchip / Microsemi
Corriente continua del colector:
113 A
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
1
Subcategoría:
IGBT
Nombre comercial:
POWER MOS 7 IGBT
Tags
APT45GP, APT45G, APT45, APT4, APT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 1200V 113A 625000mW 3-Pin(3+Tab) T-MAX Tube
***rochip
IGBT PT MOS 7 Combi 1200 V 45 A TO-247 MAX
*** Stop Electro
Insulated Gate Bipolar Transistor, 113A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
APT75GP120B2G Single 1200 V 100 A 1042 W 320 nC POWER MOS 7® IGBT - TO-247-3
***rochip
IGBT PT MOS 7 Single 1200 V 75 A TO-247 MAX
***et
Trans IGBT Chip N-CH 1.2KV 100A 3-Pin(3+Tab) T-MAX
*** Stop Electro
Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 100A 750000mW 3-Pin(3+Tab) TO-247AD
***ure Electronics
GenX3™ XPT™ IGBT 1200 V 100 A Flange Mount High-Speed IGBT - TO-247AD
***ark
Igbt, Single, N-Ch, 1.2Kv, 100A, To247Ad; Dc Collector Current:100A; Collector Emitter Saturation Voltage Vce(On):3.1V; Power Dissipation Pd:750W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247Ad; No. Of Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 88A 500000mW 3-Pin(3+Tab) T-MAX Tube
***ure Electronics
APT40GR120Bx Series 1200 V 88 A Flange Mount Ultra Fast NPT IGBT® - TO-247-3
***rochip
IGBT MOS 8 1200 V 40 A TO-247 MAX
*** Stop Electro
Insulated Gate Bipolar Transistor, 88A I(C), 1200V V(BR)CES, N-Channel
***ure Electronics
IXYH50N120C3D1 Series 1200 V 105 A Flange Mount Siode GENX3 IGBT - TO-247AD
***ca Corp
Insulated Gate Bipolar Transistor, 105A I(C), 1200V V(BR)CES, N-Channel, TO-247AD
***el Electronic
Trans IGBT Chip N-CH 1.2KV 90A 3-Pin(3+Tab) TO-247AD
***ical
Trans IGBT Chip N-CH 1200V 69A 417000mW 3-Pin(3+Tab) TO-247 Tube
***rochip
IGBT PT MOS 7 Combi 1200 V 25 A TO-247
*** Stop Electro
Insulated Gate Bipolar Transistor, 69A I(C), 1200V V(BR)CES, N-Channel, TO-247
***DA Technology Co., Ltd.
Product Description Demo for Development.
***ical
Trans IGBT Chip N-CH 1200V 90A 400000mW 3-Pin(3+Tab) TO-247AC Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 90A I(C), 1200V V(BR)CES, N-Channel
*** Electronic Components
IGBT Transistors 1200V UltraFast Discrete IGBT
***or
IGBT, 90A I(C), 1200V V(BR)CES,
***el Electronic
CAP CER 15PF 50V 5% NP0 RADIAL
Parte # Mfg. Descripción Valores Precio
APT45GP120B2DQ2G
DISTI # V99:2348_09096420		Microsemi CorporationTrans IGBT Chip N-CH 1.2KV 113A 3-Pin(3+Tab) T-MAX
RoHS: Compliant		27
  • 500:$13.9800
  • 250:$14.5100
  • 100:$15.3700
  • 50:$16.9700
  • 25:$17.4899
  • 10:$19.0300
  • 5:$19.6400
  • 1:$20.5500
APT45GP120B2DQ2G
DISTI # V36:1790_09096420		Microsemi CorporationTrans IGBT Chip N-CH 1.2KV 113A 3-Pin(3+Tab) T-MAX
RoHS: Compliant		0
    APT45GP120B2DQ2G
    DISTI # APT45GP120B2DQ2G-ND    		Microsemi CorporationIGBT 1200V 113A 625W TMAX
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		56In Stock
    • 500:$15.2528
    • 100:$17.4633
    • 25:$18.7896
    • 10:$20.4480
    • 1:$22.1100
    APT45GP120B2DQ2G
    DISTI # 26978492    		Microsemi CorporationTrans IGBT Chip N-CH 1.2KV 113A 3-Pin(3+Tab) T-MAX
    RoHS: Compliant    		27
    • 500:$15.0285
    • 250:$15.5983
    • 100:$16.5227
    • 50:$18.2428
    • 25:$18.8016
    • 10:$20.4572
    • 5:$21.1130
    • 1:$22.0912
    APT45GP120B2DQ2G
    DISTI # APT45GP120B2DQ2G    		Microchip Technology IncPower MOS 7 IGBT N-Channel 1200V 113A 3-Pin TO-247 - Rail/Tube (Alt: APT45GP120B2DQ2G)
    RoHS: Compliant
    Min Qty: 120
    Container: Tube    		Americas - 0
    • 1200:$12.9900
    • 600:$13.1900
    • 360:$13.6900
    • 240:$14.0900
    • 120:$14.5900
    APT45GP120B2DQ2G
    DISTI # 494-APT45GP120B2DQ2G    		Microchip Technology IncIGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi
    RoHS: Compliant    		3
    • 1:$20.6300
    • 5:$19.7100
    • 10:$19.0900
    • 25:$17.5400
    • 50:$17.0100
    • 100:$16.2100
    • 250:$14.8900
    • 500:$13.7200
    APT45GP120B2DQ2G
    DISTI # APT45GP120B2DQX    		Microsemi CorporationPOWER IGBT TRANSISTOR
    RoHS: Compliant    		0
    • 30:$13.8000
    • 100:$13.4500
    • 500:$13.2900
    Imagen Parte # Descripción
    APT45GP120BG

    Mfr.#: APT45GP120BG

    OMO.#: OMO-APT45GP120BG

    		 IGBT Transistors FG, IGBT, 1200V, 45A, TO-247, RoHS
    APT45GP120B2DQ2G

    Mfr.#: APT45GP120B2DQ2G

    OMO.#: OMO-APT45GP120B2DQ2G

    		 IGBT Transistors FG, IGBT-COMBI, 1200V, TO-247 T-MAX, RoHS
    APT45GP120J

    Mfr.#: APT45GP120J

    OMO.#: OMO-APT45GP120J

    		 IGBT Transistors FG, IGBT, 1200V, 45A, SOT-227
    APT45GP120JDQ2

    Mfr.#: APT45GP120JDQ2

    OMO.#: OMO-APT45GP120JDQ2

    		 IGBT Transistors FG, IGBT-COMBI, 1200V, 45A, SOT-227
    APT45GP120J

    Mfr.#: APT45GP120J

    OMO.#: OMO-APT45GP120J-MICROSEMI

    		 IGBT Transistors
    APT45GP120BG

    Mfr.#: APT45GP120BG

    OMO.#: OMO-APT45GP120BG-MICROSEMI

    		 IGBT Transistors
    APT45GP120B2DQ2G

    Mfr.#: APT45GP120B2DQ2G

    OMO.#: OMO-APT45GP120B2DQ2G-MICROSEMI

    		 IGBT Transistors
    APT45GP120JDF2

    Mfr.#: APT45GP120JDF2

    OMO.#: OMO-APT45GP120JDF2-1190

    		 Nuevo y original
    APT45GP120JDQ2

    Mfr.#: APT45GP120JDQ2

    OMO.#: OMO-APT45GP120JDQ2-MICROSEMI

    		 Trans IGBT Chip N-CH 1.2KV 75A 4-Pin SOT-227
    Disponibilidad
    Valores:
    33
    En orden:
    2016
    Ingrese la cantidad:
    El precio actual de APT45GP120B2DQ2G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    20,63 US$
    20,63 US$
    5
    19,71 US$
    98,55 US$
    10
    19,09 US$
    190,90 US$
    25
    17,54 US$
    438,50 US$
    50
    17,01 US$
    850,50 US$
    100
    16,21 US$
    1 621,00 US$
    250
    14,89 US$
    3 722,50 US$
    500
    13,72 US$
    6 860,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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