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IRF8313TRPBF

IRF8313TRPBF
Mfr. #:
IRF8313TRPBF
Fabricante:
Infineon Technologies
Descripción:
MOSFET 2N-CH 30V 9.7A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF8313TRPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRF8313TRPBF más información
Atributo del producto
Valor de atributo
Fabricante
IR
categoria de producto
FET: matrices
Serie
HEXFETR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.019048 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 175°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
2W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
760pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
9.7A
Rds-On-Max-Id-Vgs
15.5 mOhm @ 9.7A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Puerta-Carga-Qg-Vgs
9nC @ 4.5V
Disipación de potencia Pd
2 W
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9.7 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
21.6 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
6 nC
Tags
IRF8313TRP, IRF8313T, IRF8313, IRF831, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Pack of 20, Dual N-Channel MOSFET, 9.7 A, 30 V, 8-Pin SOIC Infineon IRF8313TRPBF
***ure Electronics
Dual N-Channel 30 V 21.6 mOhm 9 nC HEXFET® Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ineon
Benefits: RoHS Compliant; Low RDS(on); Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Dual N-Channel MOSFET
***i-Key
MOSFET N-CH DUAL 30V 9.7A 8-SOIC
***ied Electronics & Automation
MOSFET, DUAL N-CHANNEL, 30V, 9.7A, SO-8
***ukat
2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
***ark
Transistor Polarity:dual N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0125Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; No. Of Pins:8Pinsrohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, DUAL N CH, 30V, 9.7A, SOIC-8; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0125ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; Power Dissipation Pd:2W; Transistor Case Style:SOIC; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, DOPPIO CAN. N, 30V, 9.7A, SOIC-8; Polarità Transistor:Canale N Doppio; Corrente Continua di Drain Id:9.7A; Tensione Drain Source Vds:30V; Resistenza di Attivazione Rds(on):0.0125ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:1.8V; Dissipazione di Potenza Pd:2W; Modello Case Transistor:SOIC; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
30V HEXFET® Power MOSFETs
Infineon 30V HEXFET® Power MOSFETs are designed for high density applications requiring small size, high efficiency and improved thermal conduction, making them ideally suited for notebook applications and point-of-load (POL) converters used in servers, as well as advanced telecom and datacom systems. These 30V HEXFET® Power MOSFETs offer significant gate oxide improvement over previous generations and provide high performance as part of a system-wide solution to optimize 12VIN / 1-3VOUT DC-DC synchronous buck converter applications. Low RDS(on) and low Qg makes these Infineon 30V HEXFET® Power MOSFETs ideally suited for point-of-load converter applications. The low conduction losses improve full-load efficiency and thermal performance while the low switching losses help to achieve high efficiency even at light loads.Learn More
Parte # Mfg. Descripción Valores Precio
IRF8313TRPBF
DISTI # V72:2272_13890321		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
RoHS: Compliant		7715
  • 6000:$0.2216
  • 3000:$0.2540
  • 1000:$0.2545
  • 500:$0.3033
  • 250:$0.3042
  • 100:$0.3051
  • 25:$0.4214
  • 10:$0.4235
  • 1:$0.4854
IRF8313TRPBF
DISTI # IRF8313TRPBFCT-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		18648In Stock
  • 1000:$0.3542
  • 500:$0.4341
  • 100:$0.5739
  • 10:$0.7340
  • 1:$0.8300
IRF8313TRPBF
DISTI # IRF8313TRPBFDKR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		18648In Stock
  • 1000:$0.3542
  • 500:$0.4341
  • 100:$0.5739
  • 10:$0.7340
  • 1:$0.8300
IRF8313TRPBF
DISTI # IRF8313TRPBFTR-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)		16000In Stock
  • 4000:$0.3168
IRF8313TRPBF
DISTI # 31228817		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
RoHS: Compliant		24000
  • 4000:$0.1910
IRF8313TRPBF
DISTI # 30571752		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
RoHS: Compliant		7715
  • 6000:$0.2216
  • 3000:$0.2540
  • 1000:$0.2545
  • 500:$0.3033
  • 250:$0.3042
  • 100:$0.3051
  • 36:$0.4214
IRF8313TRPBF
DISTI # SP001577640		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R (Alt: SP001577640)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Europe - 4000
  • 4000:€0.2769
  • 8000:€0.2269
  • 16000:€0.2079
  • 24000:€0.1919
  • 40000:€0.1779
IRF8313TRPBF
DISTI # IRF8313TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R - Tape and Reel (Alt: IRF8313TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Reel		Americas - 0
  • 4000:$0.2039
  • 8000:$0.1969
  • 16000:$0.1899
  • 24000:$0.1829
  • 40000:$0.1799
IRF8313TRPBF
DISTI # IRF8313TRPBF		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC T/R (Alt: IRF8313TRPBF)
RoHS: Compliant
Min Qty: 4000
Container: Tape and Reel		Asia - 0
    IRF8313TRPBF
    DISTI # 42Y0424    		Infineon Technologies AGDual MOSFET, Dual N Channel, 9.7 A, 30 V, 0.0125 ohm, 10 V, 1.8 V RoHS Compliant: Yes3489
    • 1:$0.7680
    • 10:$0.6390
    • 25:$0.5690
    • 50:$0.4980
    • 100:$0.4270
    • 250:$0.4010
    • 500:$0.3760
    • 1000:$0.3500
    IRF8313TRPBF.
    DISTI # 27AC6909    		Infineon Technologies AGTransistor Polarity:Dual N Channel,Continuous Drain Current Id:9.7A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0125ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V,Power Dissipation Pd:2W,No. of Pins:8PinsRoHS Compliant: Yes0
      IRF8313TRPBF
      DISTI # 70018020      		Infineon Technologies AGIRF8313TRPBF Dual N-channel MOSFET Transistor,9.7 A,30 V,8-Pin SOIC
      RoHS: Compliant      		0
      • 4000:$0.6800
      IRF8313TRPBF
      DISTI # 942-IRF8313TRPBF      		Infineon Technologies AGMOSFET MOSFT DUAL NCh 30V 9.7A
      RoHS: Compliant      		16922
      • 1:$0.6700
      • 10:$0.5510
      • 100:$0.3550
      • 1000:$0.2840
      • 4000:$0.2400
      • 8000:$0.2310
      • 24000:$0.2220
      IRF8313TRPBFInternational Rectifier9.7 A, 30 V, 0.0155 OHM, 2 CHANNEL, N-CHANNEL, SI, POWER, MOSFET, MS-012AA1095
      • 273:$0.5874
      • 69:$0.7343
      • 1:$1.4685
      IRF8313TRPBF
      DISTI # 8273903P      		Infineon Technologies AGHEXFET N-CH MOSFET 9.7A 30V SOIC8, RL2520
      • 100:£0.2600
      • 500:£0.2350
      • 2000:£0.2060
      • 4000:£0.1740
      IRF8313TRPBF
      DISTI # IRF8313PBF-GURT      		Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
      RoHS: Compliant      		2600
      • 50:€0.2460
      • 100:€0.2060
      • 500:€0.1860
      • 2000:€0.1790
      IRF8313TRPBF
      DISTI # XSLY00000000869      		INFINEON/IRSO-8
      RoHS: Compliant      		4000
      • 4000:$0.2200
      IRF8313TRPBF
      DISTI # C1S322000487013      		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
      RoHS: Compliant      		7975
      • 4000:$0.2400
      IRF8313TRPBF
      DISTI # C1S322000487004      		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC T/R
      RoHS: Compliant      		7715
      • 250:$0.3042
      • 100:$0.3051
      • 25:$0.4214
      • 10:$0.4235
      IRF8313TRPBF
      DISTI # 2468027      		Infineon Technologies AGMOSFET, DUAL N CH, 30V, 9.7A, SOIC-8
      RoHS: Compliant      		2789
      • 5:£0.4370
      • 25:£0.3490
      • 100:£0.2650
      • 250:£0.2530
      • 500:£0.2400
      IRF8313TRPBF
      DISTI # 2468027      		Infineon Technologies AGMOSFET, DUAL N CH, 30V, 9.7A, SOIC-8
      RoHS: Compliant      		3519
      • 1:$1.0700
      • 10:$0.8720
      • 100:$0.5620
      • 1000:$0.4500
      • 4000:$0.3810
      • 8000:$0.3660
      • 24000:$0.3560
      IRF8313TRPBF
      DISTI # 2468027RL      		Infineon Technologies AGMOSFET, DUAL N CH, 30V, 9.7A, SOIC-8
      RoHS: Compliant      		0
      • 1:$1.0700
      • 10:$0.8720
      • 100:$0.5620
      • 1000:$0.4500
      • 4000:$0.3810
      • 8000:$0.3660
      • 24000:$0.3560
      Imagen Parte # Descripción
      IRF8313TRPBF

      Mfr.#: IRF8313TRPBF

      OMO.#: OMO-IRF8313TRPBF

      		 MOSFET MOSFT DUAL NCh 30V 9.7A
      IRF8313PBF

      Mfr.#: IRF8313PBF

      OMO.#: OMO-IRF8313PBF

      		 MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      IRF8313TRPBF-CUT TAPE

      Mfr.#: IRF8313TRPBF-CUT TAPE

      OMO.#: OMO-IRF8313TRPBF-CUT-TAPE-1190

      		 Nuevo y original
      IRF831

      Mfr.#: IRF831

      OMO.#: OMO-IRF831-1190

      		 Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      IRF8313

      Mfr.#: IRF8313

      OMO.#: OMO-IRF8313-1190

      		 Nuevo y original
      IRF8313PBF

      Mfr.#: IRF8313PBF

      OMO.#: OMO-IRF8313PBF-INFINEON-TECHNOLOGIES

      		 Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
      IRF8313TRPBF

      Mfr.#: IRF8313TRPBF

      OMO.#: OMO-IRF8313TRPBF-INFINEON-TECHNOLOGIES

      		 MOSFET 2N-CH 30V 9.7A 8-SOIC
      IRF8313TRPBFINFINEON

      Mfr.#: IRF8313TRPBFINFINEON

      OMO.#: OMO-IRF8313TRPBFINFINEON-1190

      		 Nuevo y original
      IRF831P

      Mfr.#: IRF831P

      OMO.#: OMO-IRF831P-1190

      		 Nuevo y original
      IRF831PBF

      Mfr.#: IRF831PBF

      OMO.#: OMO-IRF831PBF-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      5000
      Ingrese la cantidad:
      El precio actual de IRF8313TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,24 US$
      0,24 US$
      10
      0,23 US$
      2,28 US$
      100
      0,22 US$
      21,57 US$
      500
      0,20 US$
      101,85 US$
      1000
      0,19 US$
      191,70 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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