IRF8

IRF8010STRLPBF vs IRF8113PBF vs IRF8010SPBF

 
PartNumberIRF8010STRLPBFIRF8113PBFIRF8010SPBF
DescriptionMOSFET MOSFT 100V 80A 15mOhm 81nCMOSFET 30V 1 N-CH HEXFET 6mOhms 24nCMOSFET 100V N-CH HEXFET 15mOhms 81nC
ManufacturerInfineonInfineonInfineon
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseTO-252-3SO-8TO-252-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage100 V30 V100 V
Id Continuous Drain Current80 A16.6 A80 A
Rds On Drain Source Resistance15 mOhms7.4 mOhms15 mOhms
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge81 nC24 nC81 nC
Pd Power Dissipation260 W2.5 W260 W
ConfigurationSingleSingleSingle
PackagingReelTubeTube
Height2.3 mm1.75 mm2.3 mm
Length6.5 mm4.9 mm6.5 mm
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width6.22 mm3.9 mm6.22 mm
BrandInfineon / IRInfineon / IRInfineon / IR
Product TypeMOSFETMOSFETMOSFET
Factory Pack Quantity800951000
SubcategoryMOSFETsMOSFETsMOSFETs
Part # AliasesSP001565774SP001572234SP001575454
Unit Weight0.139332 oz0.019048 oz0.139332 oz
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 175 C
Channel Mode-EnhancementEnhancement
Type-HEXFET Power MOSFETSmps MOSFET
Fall Time-3.5 ns120 ns
Rise Time-8.9 ns130 ns
Typical Turn Off Delay Time-17 ns61 ns
Typical Turn On Delay Time-13 ns15 ns
Fabricante Parte # Descripción RFQ
Infineon / IR
Infineon / IR
IRF8010STRLPBF MOSFET MOSFT 100V 80A 15mOhm 81nC
IRF8113TRPBF MOSFET MOSFT 30V 16.6A 6mOhm 24nC
IRF8113PBF MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
IRF8010SPBF MOSFET 100V N-CH HEXFET 15mOhms 81nC
Vishay / Siliconix
Vishay / Siliconix
IRF820ALPBF MOSFET N-CH 500V HEXFET MOSFET TO-26
IRF820ASPBF MOSFET N-Chan 500V 2.5 Amp
IRF820APBF MOSFET N-CH 500V HEXFET MOSFET
IRF820A MOSFET RECOMMENDED ALT 844-IRF820APBF
Infineon Technologies
Infineon Technologies
IRF8010PBF MOSFET MOSFT 100V 80A 15mOhm 81nC
IRF8010PBF MOSFET N-CH 100V 80A TO-220AB
IRF8010STRRPBF MOSFET N-CH 100V 80A D2PAK
IRF8113 MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113GPBF MOSFET N-CH 30V 17.2A 8-SO
IRF8113TR MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113TRPBF MOSFET N-CH 30V 17.2A 8-SOIC
IRF8010STRLPBF MOSFET N-CH 100V 80A D2PAK
IRF8010SPBF Darlington Transistors MOSFET 100V N-CH HEXFET 15mOhms 81nC
IRF8113GTRPBF MOSFET N-CH 30V 17.2A 8-SOIC
IRF8113PBF IGBT Transistors MOSFET 30V 1 N-CH HEXFET 6mOhms 24nC
Vishay
Vishay
IRF820ALPBF MOSFET N-CH 500V 2.5A TO-262
IRF820AL MOSFET N-CH 500V 2.5A TO-262
IRF820AS MOSFET N-CH 500V 2.5A D2PAK
IRF820APBF Darlington Transistors MOSFET N-Chan 500V 2.5 Amp
IRF820ASPBF Darlington Transistors MOSFET N-Chan 500V 2.5 Amp
IRF820A MOSFET N-Chan 500V 2.5 Amp
IRF8113TRPBF. TRENCH_MOSFETS , ROHS COMPLIANT: YES
IRF820. Power Field-Effect Transistor, 2.5A I(D), 500V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
IRF8010STRLPBF-CUT TAPE Nuevo y original
IRF8113TRPBF-CUT TAPE Nuevo y original
IRF8010 MOSFET Transistor, N-Channel, TO-220AB
IRF8010,IRF820PBF,IRF801 Nuevo y original
IRF8010L Nuevo y original
IRF8010S Nuevo y original
IRF8010STRLPBF. Transistor Polarity:N Channel, Continuous Drain Current Id:80A, Drain Source Voltage Vds:100V, On Resistance Rds(on):0.012ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power Dissi
IRF8010STRPBF Nuevo y original
IRF803 Nuevo y original
IRF80701 Nuevo y original
IRF807D1 Nuevo y original
IRF807D1TRPBF Nuevo y original
IRF807D2 Nuevo y original
IRF807VD1 Nuevo y original
IRF807VD1TRPBF Nuevo y original
IRF810 Nuevo y original
IRF8113PBF-1 Nuevo y original
IRF8113TRPBF-1 Nuevo y original
IRF8113UTRPBF Nuevo y original
IRF814PBF Nuevo y original
IRF820 SEC Nuevo y original
IRF820A/ SIHF820A Nuevo y original
STMicroelectronics
STMicroelectronics
IRF820 MOSFET N-CH 500V 2.5A TO-220AB
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