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IRF8313PBF

IRF8313PBF
Mfr. #:
IRF8313PBF
Fabricante:
Infineon Technologies
Descripción:
Trans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF8313PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET: matrices
Serie
-
embalaje
Embalaje alternativo de tubo
Unidad de peso
0.019048 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 175°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Doble
Tipo FET
2 N-Channel (Dual)
Potencia máxima
2W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
760pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
9.7A
Rds-On-Max-Id-Vgs
15.5 mOhm @ 9.7A, 10V
Vgs-th-Max-Id
2.35V @ 25μA
Puerta-Carga-Qg-Vgs
90nC @ 4.5V
Disipación de potencia Pd
2 W
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
9.7 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
21.6 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
6 nC
Tags
IRF8313, IRF831, IRF83, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 30 V 2 W 6 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***et Europe
Transistor MOSFET Array Dual N-CH 30V 9.7A 8-Pin SOIC Tube
***ark
Dual N Channel Mosfet, 30V, 9.7A, Soic; Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:8.1A; On Resistance Rds(On):0.0155Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V
***ment14 APAC
MOSFET, DUAL N-CH 30V 9.7A SO8; Transistor Polarity:N Channel; Continuous Drain Current Id:9.7A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.7A; Package / Case:SOIC; Power Dissipation Pd:2W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Parte # Mfg. Descripción Valores Precio
IRF8313PBF
DISTI # V99:2348_13891188		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
RoHS: Compliant		182
  • 1:$0.2929
IRF8313PBF
DISTI # IRF8313PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 9.7A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRF8313PBF..
    DISTI # 30728279    		Infineon Technologies AGIRF8313PBF..735
    • 260:$0.2969
    IRF8313PBF
    DISTI # 26198223    		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
    RoHS: Compliant    		182
    • 25:$0.2929
    IRF8313PBF
    DISTI # IRF8313PBF    		Infineon Technologies AGTrans MOSFET N-CH 30V 9.7A 8-Pin SOIC - Rail/Tube (Alt: IRF8313PBF)
    RoHS: Compliant
    Min Qty: 3800
    Container: Tube    		Americas - 4924
      IRF8313PBF..
      DISTI # 10R3491      		Infineon Technologies AGDUAL N CHANNEL MOSFET, 30V, 9.7A, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.8V735
      • 1:$0.1930
      • 10:$0.1930
      • 100:$0.1930
      • 500:$0.1930
      • 1000:$0.1930
      • 2500:$0.1930
      • 10000:$0.1930
      IRF8313PBF
      DISTI # 942-IRF8313PBF      		Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
      RoHS: Compliant      		0
        IRF8313PBFInfineon Technologies AGPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		1439
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313PBFInternational RectifierPower Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
        RoHS: Compliant        		5182
        • 1000:$0.2400
        • 500:$0.2500
        • 100:$0.2600
        • 25:$0.2700
        • 1:$0.2900
        IRF8313TRPBF
        DISTI # IRF8313PBF-GURT        		Infineon Technologies AG2xN-Ch 30V 9,7A 2,0W 0,0155R SO8
        RoHS: Compliant        		2600
        • 50:€0.2460
        • 100:€0.2060
        • 500:€0.1860
        • 2000:€0.1790
        IRF8313PBF
        DISTI # C1S327400167723        		Infineon Technologies AGTrans MOSFET N-CH Si 30V 9.7A 8-Pin SOIC Tube
        RoHS: Compliant        		123
        • 50:$0.2240
        • 10:$0.3250
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        IRF8306MTR1PBF

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        IRF8304MTR1PBF

        Mfr.#: IRF8304MTR1PBF

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        		 MOSFET N-CH 30V 28A MX
        IRF830/IRF830PBF

        Mfr.#: IRF830/IRF830PBF

        OMO.#: OMO-IRF830-IRF830PBF-1190

        		 Nuevo y original
        IRF830AL

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        IRF830APBF,IRF830A,IRF83

        Mfr.#: IRF830APBF,IRF830A,IRF83

        OMO.#: OMO-IRF830APBF-IRF830A-IRF83-1190

        		 Nuevo y original
        IRF830P

        Mfr.#: IRF830P

        OMO.#: OMO-IRF830P-1190

        		 Nuevo y original
        IRF831

        Mfr.#: IRF831

        OMO.#: OMO-IRF831-1190

        		 Power Field-Effect Transistor, 4.5A I(D), 450V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        IRF831P

        Mfr.#: IRF831P

        OMO.#: OMO-IRF831P-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        2000
        Ingrese la cantidad:
        El precio actual de IRF8313PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        0,34 US$
        0,34 US$
        10
        0,32 US$
        3,19 US$
        100
        0,30 US$
        30,24 US$
        500
        0,29 US$
        142,80 US$
        1000
        0,27 US$
        268,80 US$
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