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IXTY1R4N100P

IXTY1R4N100P
Mfr. #:
IXTY1R4N100P
Fabricante:
Littelfuse
Descripción:
MOSFET 1.4 Amps 1000V 11 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTY1R4N100P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTY1R4N100P DatasheetIXTY1R4N100P Datasheet (P4-P5)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
1 kV
Id - Corriente de drenaje continua:
1.4 A
Rds On - Resistencia de la fuente de drenaje:
11 Ohms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
63 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
2.38 mm
Longitud:
6.73 mm
Serie:
IXTY1R4N100
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
IXYS
Otoño:
28 ns
Tipo de producto:
MOSFET
Hora de levantarse:
35 ns
Cantidad de paquete de fábrica:
70
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
65 ns
Tiempo típico de retardo de encendido:
25 ns
Unidad de peso:
0.012346 oz
Tags
IXTY1R4N1, IXTY1R4, IXTY1R, IXTY1, IXTY, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 1KV 1.4A 3-Pin(2+Tab) TO-252
***trelec
MOSFET [Ixys] IXTY1R4N100P MOSFET
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***icroelectronics
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***el Electronic
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***nell
MOSFET, N-CH, 1.05KV, 1.5A, 60W, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 1.05kV; On Resistance Rds(on): 6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: MDmesh K5 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***ure Electronics
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***et
Transistor MOSFET N-Channel 800V 1.5A 3-Pin TO-252 T/R
***nell
MOSFET, N-CH, 800V, 1.5A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 1.5A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 13W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
***emi
N-Channel QFET® MOSFET 900V, 1.7A, 7.2Ω
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:900V; Continuous Drain Current, Id:1.7A; On Resistance, Rds(on):7.2ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:5V ;RoHS Compliant: Yes
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***ure Electronics
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***nell
MOSFET, N-CH, 800V, 4A, TO-252; Transistor Polarity: N Channel; Continuous Drain Current Id: 4A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 32W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS P7 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
800V CoolMOS TM P7 series is a perfect fit for low power SMPS applications by fully addressing market needs in performance, ease-of-use and price/performance ratio. It mainly focuses on flyback applications including adapter and charger, LED driver, audio SMPS, AUX and industrial power. | Summary of Features: Best-in-class FOM R DS(on) * E oss; reduced Q g, C iss and C oss; Best-in-class DPAK R DS(on) of 280m; Best-in-class V (GS)th of 3V and smallest V (GS)th variation of 0.5V; Integrated Zener diode ESD protection up to Class 2 (HBM); Best-in-class quality and reliability; Fully optimized portfolio | Benefits: 0.1% to 0.6% efficiency gain and 2C to 8C lower MOSFET temperature as compared to CoolMOS C3; Enabling higher power density designs, BOM savings and lower assembly cost; Easy to drive and to design-in; Better production yield by reducing ESD related failures; Less production issues and reduced field returns; Easy to select right parts for fine tuning of designs | Target Applications: Adapter; LED; Audio; Industrial SMPS; AUX power
***ure Electronics
N-Channel 800 V 0.95 O 31 nC CoolMOS CE Power Transistor - DPAK
***ark
MOSFET, N-CH, 800V, 5.7A, TO-252-3; Channel Type:N Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:5.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
*** Stop Electro
Power Field-Effect Transistor, 5.7A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 800V, 5.7A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 5.7A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.8ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 83W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
***ineon
800V CoolMOS CE is Infineons high performance device family offering 800 volts break down voltage. The CE targets consumer electronics applications as well as Lighting. The new 800V selection series specifically aims at LED applications. With this specific CoolMOS family, Infineon combines long experience as the leading superjunction MOSFET supplier with best-in-class innovation. | Summary of Features: Low specific on-state resistance (R DS(on)*A); Very low energy storage in output capacitance (E oss) @ 400V; Low gate charge (Q g); Field-proven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding price/performance; High reliability; Ease-of-use | Target Applications: LED lighting
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 6 A, 850 mΩ, DPAK
*** Source Electronics
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***nell
MOSFET, N-CH, 800V, 6A, TO-252-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 6A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.71ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Pow
*** Stop Electro
Power Field-Effect Transistor, 6A I(D), 800V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
***rchild Semiconductor
SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. In addition, internal gate-source ESD diode allows to withstand over 2kV HBM surge stress.Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as Audio, Laptop adapter, Lighting, ATX power and industrial power applications.
Parte # Mfg. Descripción Valores Precio
IXTY1R4N100P
DISTI # IXTY1R4N100P-ND		IXYS CorporationMOSFET N-CH 1000V 1.4A TO-252
RoHS: Compliant
Min Qty: 70
Container: Tube		Temporarily Out of Stock
  • 70:$2.0626
IXTY1R4N100P
DISTI # 747-IXTY1R4N100P		IXYS CorporationMOSFET 1.4 Amps 1000V 11 Rds
RoHS: Compliant		36
  • 1:$2.6700
  • 10:$2.4200
  • 25:$2.1000
  • 50:$1.9700
  • 100:$1.9400
  • 250:$1.5800
  • 500:$1.5100
  • 1000:$1.2500
  • 2500:$1.0500
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Disponibilidad
Valores:
Available
En orden:
1989
Ingrese la cantidad:
El precio actual de IXTY1R4N100P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,67 US$
2,67 US$
10
2,42 US$
24,20 US$
25
2,10 US$
52,50 US$
50
1,97 US$
98,50 US$
100
1,94 US$
194,00 US$
250
1,58 US$
395,00 US$
500
1,51 US$
755,00 US$
1000
1,25 US$
1 250,00 US$
2500
1,05 US$
2 625,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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