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FGD5T120SH

FGD5T120SH
Mfr. #:
FGD5T120SH
Fabricante:
ON Semiconductor / Fairchild
Descripción:
IGBT Transistors 1200V 5A Field Stop Trench IGBT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FGD5T120SH Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FGD5T120SH más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
DPAK-3
Estilo de montaje:
SMD / SMT
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1.2 kV
Voltaje de saturación colector-emisor:
2.9 V
Voltaje máximo del emisor de puerta:
25 V
Corriente continua del colector a 25 C:
10 A
Pd - Disipación de energía:
69 W
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
FGD5T120SH
Embalaje:
Carrete
Corriente continua de colector Ic Max:
10 A
Marca:
ON Semiconductor / Fairchild
Corriente de fuga puerta-emisor:
+/- 400 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
2500
Subcategoría:
IGBT
Unidad de peso:
0.009184 oz
Tags
FGD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 10A 69000mW T/R
***nell
IGBT, SINGLE, N-CH, 1.2KV, 10A, TO-252-3; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 2.9V; Power Dissipation Pd: 69W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-252; No.
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s new series of field stop 3rd generation IGBTs offer the optimum performance for inrush current limitation, lighting and home appliance applications.
***ark
IGBT, 1.2KV, 10A, 150DEG C, 69W; Continuous Collector Current:10A; Collector Emitter Saturation Voltage:2.9V; Power Dissipation:69W; Collector Emitter Voltage Max:1.2kV; No. of Pins:3Pins; Operating Temperature Max:150°C RoHS Compliant: Yes
***ical
Trans IGBT Chip N-CH 600V 10A 83000mW 3-Pin(2+Tab) DPAK T/R
***icroelectronics
Trench gate field-stop IGBT, H series 600 V, 5 A high speed
***ure Electronics
H Series 600 V 10 A SMT Trench Gate Field-Stop IGBT - TO-252
***nell
IGBT, 600V, 10A, 175DEG C, 83W; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.5V; Power Dissipation Pd: 83W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: H Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***p One Stop
Trans IGBT Chip N-CH 1200V 6.2A 62000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
SGD02N120 Series 1200 V 2 A Surface Mount Fast IGBT - PG-TO-252-3
***ark
Igbt, Single, 1.2Kv, 6.2A, To-252; Dc Collector Current:6.2A; Collector Emitter Saturation Voltage Vce(On):3.1V; Power Dissipation Pd:62W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-252; No. Of Pins:3Pins; Rohs Compliant: Yes
***ineon
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: 30% lower E off compared to previous generation; Short circuit withstand time 10s; Designed for operation above 30kHz; High ruggedness, temperature stable behaviour; Pb-free lead plating; RoHS compliant; Qualified according to JEDEC for target applications | Target Applications: Infineon offers a comprehensive IGBT portfolio for the general purpose inverters, solar inverters, UPS, induction heating, microwave oven, rice cookers, welding and SMPS segments.
*** Source Electronics
Trans IGBT Chip N-CH 1200V 3.2A 28000mW 3-Pin(2+Tab) DPAK T/R / HighSpeed 2-Technology
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.7pF 25volts C0G +/-0.25pF
***ineon SCT
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies, PG-TO252-3, RoHS
***nell
IGBT, N, 1200V, 1.3A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:1200V; Current Ic Continuous a Max:1.3A; Voltage, Vce Sat Max:2.8V; Power Dissipation:28W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:1200V; Transistors, No. of:1
***ineon
Infineon provides a huge IGBT portfolio addressing Soft Switching/Resonant and Hard Switching Topologies. | Summary of Features: Loss reduction in resonant circuits; Temperature stable behavior; Parallel switching capability; Tight parameter distribution; E off optimized for IC =1A | Target Applications: SMPS
***ical
Trans IGBT Chip N-CH 600V 9A 38000mW 3-Pin(2+Tab) DPAK T/R
***ure Electronics
IRG4RC10K Series 600 V 9 A Surface Mount UltraFast Speed IGBT - TO-252AA
***nell
IGBT, COPAK, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:9A; Voltage, Vce Sat Max:2.39V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Alternate Case Style:TO-252; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:18A; Power, Pd:38W; Time, Rise:24ns
***ernational Rectifier
600V UltraFast 8-60 kHz Discrete IGBT in a D-Pak package
***ark
IGBT; Transistor Type:IGBT; Transistor Polarity:N Channel; Continuous Collector Current, Ic:8.5A; Collector Emitter Saturation Voltage, Vce(sat):2.6V; Power Dissipation, Pd:38W; Package/Case:TO-252AA ;RoHS Compliant: Yes
***nell
IGBT, 600V, 8.5A, D-PAK; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:8.5A; Voltage, Vce Sat Max:2.6V; Power Dissipation:38W; Case Style:D-PAK; Termination Type:SMD; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:34A; Power, Pd:38W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:180ns; Time, Rise:11ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 6A 3-Pin(2+Tab) DPAK T/R
***emi
IGBT, 600V, 3A, Short Circuit Rated
*** Stop Electro
Insulated Gate Bipolar Transistor, 6A I(C), 600V V(BR)CES, N-Channel, TO-252
***S
French Electronic Distributor since 1988
***rchild Semiconductor
Using advanced NPT IGBT Technology, Fairchild’s the NPT IGBTs offer the optimum performance for low power inverter-driven applications where low-losses and short circuit ruggedness feature are essential.
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
1200V Field Stop Trench IGBTs
ON Semiconductor 1200V field stop trench IGBTs feature minimized conduction losses by having a VCE(SAT) of 1.8V, lower than previous fast switching NPT IGBTs. The 1200V field stop trench IGBTs target hard switching industrial applications such as solar inverters, uninterruptible power supplies (UPS), and welders. The 1200V field stop trench IGBT series operate at high switching frequencies., and is 100% tested for clamped inductive switching at current levels of four times the rated current to guarantee a larger safe operating area. These products are available in TO-247-3,  TO-247-4, and DPAK-3 packages, and are offered in 15A, 25A, and 40A ratings.
Parte # Mfg. Descripción Valores Precio
FGD5T120SH
DISTI # V72:2272_14701467		ON SemiconductorTrans IGBT Chip N-CH 1200V 10A 69000mW T/R2253
  • 1000:$0.4873
  • 500:$0.6504
  • 250:$0.6664
  • 100:$0.7403
  • 25:$0.8653
  • 10:$1.0576
  • 1:$1.2306
FGD5T120SH
DISTI # V36:1790_14701467		ON SemiconductorTrans IGBT Chip N-CH 1200V 10A 69000mW T/R0
  • 2500000:$0.4029
  • 1250000:$0.4033
  • 250000:$0.4365
  • 25000:$0.4980
  • 2500:$0.5085
FGD5T120SH
DISTI # FGD5T120SHTR-ND		ON SemiconductorIGBT 1200V 5A FS3 DPAK
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		On Order
  • 5000:$0.4843
  • 2500:$0.5085
FGD5T120SH
DISTI # FGD5T120SHCT-ND		ON SemiconductorIGBT 1200V 5A FS3 DPAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.5611
  • 500:$0.7108
  • 100:$0.8604
  • 10:$1.1040
  • 1:$1.2300
FGD5T120SH
DISTI # FGD5T120SHDKR-ND		ON SemiconductorIGBT 1200V 5A FS3 DPAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.5611
  • 500:$0.7108
  • 100:$0.8604
  • 10:$1.1040
  • 1:$1.2300
FGD5T120SH
DISTI # 31262030		ON SemiconductorTrans IGBT Chip N-CH 1200V 10A 69000mW T/R2253
  • 15:$1.2306
FGD5T120SH
DISTI # FGD5T120SH		ON SemiconductorIGBT Transistors 1200V 5A Field Stop Trench IGBT (Alt: FGD5T120SH)
RoHS: Compliant
Min Qty: 2500		Europe - 2500
  • 25000:€0.4289
  • 15000:€0.4619
  • 10000:€0.5009
  • 5000:€0.5459
  • 2500:€0.6679
FGD5T120SH
DISTI # FGD5T120SH		ON SemiconductorIGBT Transistors 1200V 5A Field Stop Trench IGBT (Alt: FGD5T120SH)
RoHS: Compliant
Min Qty: 2500		Asia - 0
  • 125000:$0.5671
  • 62500:$0.5765
  • 25000:$0.5964
  • 12500:$0.6177
  • 7500:$0.6406
  • 5000:$0.6652
  • 2500:$0.6918
FGD5T120SH
DISTI # FGD5T120SH		ON SemiconductorIGBT Transistors 1200V 5A Field Stop Trench IGBT - Tape and Reel (Alt: FGD5T120SH)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 25000:$0.4269
  • 15000:$0.4369
  • 10000:$0.4429
  • 5000:$0.4489
  • 2500:$0.4519
FGD5T120SH
DISTI # 84Y5829		ON SemiconductorIGBT, SINGLE, N-CH, 1.2KV, 10A, TO-252-3,DC Collector Current:10A,Collector Emitter Saturation Voltage Vce(on):2.9V,Power Dissipation Pd:69W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-252,No. of RoHS Compliant: Yes2305
  • 1000:$0.6090
  • 500:$0.7490
  • 250:$0.7920
  • 100:$0.8360
  • 50:$0.9110
  • 25:$0.9870
  • 10:$1.0600
  • 1:$1.2300
FGD5T120SH
DISTI # 512-FGD5T120SH		ON SemiconductorIGBT Transistors 1200V 5A Field Stop Trench IGBT
RoHS: Compliant		2341
  • 1:$1.1300
  • 10:$0.9690
  • 100:$0.7440
  • 500:$0.6580
  • 1000:$0.5190
  • 2500:$0.4610
  • 10000:$0.4430
FGD5T120SH
DISTI # 2565212		ON SemiconductorIGBT, SINGLE, N-CH, 1.2KV, 10A, TO-252-3
RoHS: Compliant		4805
  • 1000:$0.8570
  • 500:$1.1000
  • 100:$1.3200
  • 10:$1.7000
  • 1:$1.8800
FGD5T120SH
DISTI # XSKDRABV0047541		ON SEMICONDUCTOR 
RoHS: Compliant		7500 in Stock0 on Order
  • 7500:$0.6467
  • 2500:$0.6929
FGD5T120SH
DISTI # 2565212		ON SemiconductorIGBT, SINGLE, N-CH, 1.2KV, 10A, TO-252-34740
  • 500:£0.5120
  • 250:£0.5460
  • 100:£0.5790
  • 10:£0.8110
  • 1:£1.0000
Imagen Parte # Descripción
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A

 IGBT Transistors 5.3a 1200v N-Ch IGBT NPT Series
STGD5NB120SZT4

Mfr.#: STGD5NB120SZT4

OMO.#: OMO-STGD5NB120SZT4

 IGBT Transistors N-Ch 1200 Volt 5 Amp
VS-8EWS16SLHM3

Mfr.#: VS-8EWS16SLHM3

OMO.#: OMO-VS-8EWS16SLHM3

 Rectifiers 8A If, 1600V Vr TO-252AA (DPAK)
S3N

Mfr.#: S3N

OMO.#: OMO-S3N

 Rectifiers 3A, 1200V Surface Mount Rectifier
TLP5774(TP,E

Mfr.#: TLP5774(TP,E

OMO.#: OMO-TLP5774-TP-E

 Logic Output Optocouplers Gate Drive Coupler 10V 4A
ATTINY412-SSFR

Mfr.#: ATTINY412-SSFR

OMO.#: OMO-ATTINY412-SSFR

 8-bit Microcontrollers - MCU 20MHz, 4KB, SOIC8, Ind 125C, Green, T&R
LVT12R0100FER

Mfr.#: LVT12R0100FER

OMO.#: OMO-LVT12R0100FER

 Current Sense Resistors - SMD 0.01 ohm 1% 1.0W Current Sense
HGTD1N120BNS9A

Mfr.#: HGTD1N120BNS9A

OMO.#: OMO-HGTD1N120BNS9A-ON-SEMICONDUCTOR

 IGBT 1200V 5.3A 60W TO252AA
ATTINY412-SSFR

Mfr.#: ATTINY412-SSFR

OMO.#: OMO-ATTINY412-SSFR-MICROCHIP-TECHNOLOGY

 MCU 8-bit AVR RISC 4KB Flash 3.3V/5V 8-Pin SOIC N T/R
STGD5NB120SZT4

Mfr.#: STGD5NB120SZT4

OMO.#: OMO-STGD5NB120SZT4-STMICROELECTRONICS

 IGBT Transistors N-Ch 1200 Volt 5 Amp
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de FGD5T120SH es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,13 US$
1,13 US$
10
0,97 US$
9,69 US$
100
0,74 US$
74,40 US$
500
0,66 US$
329,00 US$
1000
0,52 US$
519,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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