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BSZ100N06LS3 G

BSZ100N06LS3 G
Mfr. #:
BSZ100N06LS3 G
Fabricante:
Infineon Technologies
Descripción:
BSZ100N06LS3 G
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
BSZ100N06LS3 G Ficha de datos
Entrega:
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Pago:
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Más información:
BSZ100N06LS3 G más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
FET - Single
Serie
OptiMOS
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
BSZ100N06LS3GATMA1 BSZ100N06LS3GXT SP000453672
Estilo de montaje
SMD / SMT
Nombre comercial
OptiMOS
Paquete-Estuche
8-PowerVDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
1 Channel
Paquete de dispositivo de proveedor
PG-TSDSON-8 (3.3x3.3)
Configuración
Fuente triple de drenaje cuádruple simple
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
50W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
60V
Entrada-Capacitancia-Ciss-Vds
3500pF @ 30V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
11A (Ta), 20A (Tc)
Rds-On-Max-Id-Vgs
10 mOhm @ 20A, 10V
Vgs-th-Max-Id
2.2V @ 23μA
Puerta-Carga-Qg-Vgs
45nC @ 10V
Disipación de potencia Pd
2.1 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
8 ns
Hora de levantarse
58 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
20 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
10 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
19 ns
Tiempo de retardo de encendido típico
8 ns
Modo de canal
Mejora
Tags
BSZ100N06LS3G, BSZ100N06LS, BSZ100N06L, BSZ100N06, BSZ100, BSZ10, BSZ1, BSZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Designing Power Systems
Infineon Power MOSFETs are designed to bring more efficiency, power density and cost effectiveness to your products. The full range of OptiMOS™ and StrongIRFET™ N-channel Power MOSFETs enable innovation and performance in applications such as switch mode power supplies (SMPS), motor control and drives, inverters and computing. The OptiMOS™ and StrongIRFET™ families cover the 20V to 300V range of Power MOSFET products. Infineon offers the OptiMOS™ and StrongIRFET™ product families. These are two highly innovative families that consistently meet the highest quality and performance demands in key specifications for power system design. OptiMOS™ is the market leader in highly efficient solutions for power generation, power supply and power consumption.Learn More
Parte # Mfg. Descripción Valores Precio
BSZ100N06LS3GATMA1
DISTI # V72:2272_06384814		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1733
  • 3000:$0.3721
  • 1000:$0.3758
  • 500:$0.4625
  • 250:$0.5169
  • 100:$0.5225
  • 25:$0.6506
  • 10:$0.6584
  • 1:$0.7557
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		30115In Stock
  • 1000:$0.4675
  • 500:$0.5922
  • 100:$0.7636
  • 10:$0.9660
  • 1:$1.0900
BSZ100N06LS3GATMA1
DISTI # BSZ100N06LS3GATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 60V 20A TSDSON-8
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)		25000In Stock
  • 5000:$0.4025
BSZ100N06LS3GATMA1
DISTI # 31078933		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		15000
  • 10000:$0.3626
  • 5000:$0.3759
BSZ100N06LS3GATMA1
DISTI # 31338070		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.5320
BSZ100N06LS3GATMA1
DISTI # 31066196		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		5000
  • 5000:$0.4039
BSZ100N06LS3GATMA1
DISTI # 31433908		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
RoHS: Compliant		1733
  • 17:$0.7557
BSZ100N06LS3 G
DISTI # 31073348		Infineon Technologies AGBSZ100N06LS3 G
RoHS: Compliant		270
  • 200:$0.5355
  • 100:$0.5534
  • 50:$0.6337
  • 22:$0.9422
BSZ100N06LS3G
DISTI # BSZ100N06LS3 G		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON T/R (Alt: BSZ100N06LS3 G)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel		Asia - 0
  • 5000:$0.3930
  • 10000:$0.3821
  • 15000:$0.3718
  • 25000:$0.3620
  • 50000:$0.3573
  • 125000:$0.3527
  • 250000:$0.3482
BSZ100N06LS3GXT
DISTI # BSZ100N06LS3GATMA1		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R - Tape and Reel (Alt: BSZ100N06LS3GATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel		Americas - 0
  • 5000:$0.3939
  • 10000:$0.3929
  • 20000:$0.3919
  • 30000:$0.3909
  • 50000:$0.3899
BSZ100N06LS3GATMA1.
DISTI # 25AC6456		Infineon Technologies AGTransistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V,Power Dissipation Pd:50W,No. of Pins:8Pins RoHS Compliant: Yes0
  • 1:$0.3580
  • 10000:$0.3570
  • 20000:$0.3560
  • 30000:$0.3550
BSZ100N06LS3GATMA1
DISTI # 47W3363		Infineon Technologies AGMOSFET, N CHANNEL, 60V, 20A, 8TSDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:20A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.008ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:1.7V RoHS Compliant: Yes1800
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
BSZ100N06LS3 G
DISTI # 726-BSZ100N06LS3G		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		347
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3GATMA1
DISTI # 726-BSZ100N06LS3GATM		Infineon Technologies AGMOSFET N-Ch 60V 20A TSDSON-8 OptiMOS 3
RoHS: Compliant		364
  • 1:$0.9100
  • 10:$0.7710
  • 100:$0.5920
  • 500:$0.5230
  • 1000:$0.4130
  • 5000:$0.3660
BSZ100N06LS3GATMA1Infineon Technologies AGSingle N-Channel 60 V 10 mOhm 34 nC OptiMOS Power Mosfet - TSDSON-8
RoHS: Not Compliant		10000Reel
  • 5000:$0.3800
BSZ100N06LS3GATMA1
DISTI # 7528255		Infineon Technologies AGMOSFET N-CHANNEL 60V 11A TSDSON8, PK275
  • 5:£0.6420
  • 50:£0.5120
  • 250:£0.3920
  • 1250:£0.2880
  • 2500:£0.2800
BSZ100N06LS3 GInfineon Technologies AG 295
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		1800
    • 1:$1.4400
    • 10:$1.2200
    • 100:$0.9370
    • 500:$0.8280
    • 1000:$0.6540
    • 5000:$0.5800
    BSZ100N06LS3 GInfineon Technologies AGRoHS(ship within 1day)240
    • 1:$1.4300
    • 10:$1.0700
    • 50:$0.8900
    • 100:$0.7100
    • 500:$0.6100
    • 1000:$0.5700
    BSZ100N06LS3GATMA1
    DISTI # 2212836    		Infineon Technologies AGMOSFET, N-CH, 60V, 20A, 8TSDSON
    RoHS: Compliant    		2850
    • 5:£0.6550
    • 25:£0.5220
    • 100:£0.4570
    • 250:£0.4000
    • 500:£0.3430
    BSZ100N06LS3 G
    DISTI # C1S322000698008    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		270
    • 200:$0.4200
    • 100:$0.4340
    • 50:$0.4970
    • 10:$0.7390
    • 5:$0.9120
    BSZ100N06LS3GATMA1
    DISTI # C1S322000721254    		Infineon Technologies AGMOSFETs
    RoHS: Compliant    		15000
    • 10000:$0.3626
    • 5000:$0.3759
    BSZ100N06LS3GATMA1
    DISTI # C1S322000463253    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		1733
    • 250:$0.5158
    • 100:$0.5214
    • 25:$0.6491
    • 10:$0.6569
    BSZ100N06LS3GATMA1
    DISTI # C1S322000408964    		Infineon Technologies AGTrans MOSFET N-CH 60V 11A 8-Pin TSDSON EP T/R
    RoHS: Compliant    		5000
    • 5000:$0.4110
    Imagen Parte # Descripción
    BSZ100N03MSGATMA1

    Mfr.#: BSZ100N03MSGATMA1

    OMO.#: OMO-BSZ100N03MSGATMA1

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N03MS G

    Mfr.#: BSZ100N03MS G

    OMO.#: OMO-BSZ100N03MS-G

    		 MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
    BSZ100N06NSATMA1

    Mfr.#: BSZ100N06NSATMA1

    OMO.#: OMO-BSZ100N06NSATMA1

    		 MOSFET MV POWER MOS
    BSZ100N06NS

    Mfr.#: BSZ100N06NS

    OMO.#: OMO-BSZ100N06NS

    		 MOSFET DIFFERENTIATED MOSFETS
    BSZ100N03LSGATMA1

    Mfr.#: BSZ100N03LSGATMA1

    OMO.#: OMO-BSZ100N03LSGATMA1

    		 MOSFET LV POWER MOS
    BSZ100N06LS3

    Mfr.#: BSZ100N06LS3

    OMO.#: OMO-BSZ100N06LS3-1190

    		 Nuevo y original
    BSZ100N06LS3 G

    Mfr.#: BSZ100N06LS3 G

    OMO.#: OMO-BSZ100N06LS3-G-1190

    		 BSZ100N06LS3 G
    BSZ100N06LS3G

    Mfr.#: BSZ100N06LS3G

    OMO.#: OMO-BSZ100N06LS3G-1190

    		 Nuevo y original
    BSZ100N06LS3GATMA1

    Mfr.#: BSZ100N06LS3GATMA1

    OMO.#: OMO-BSZ100N06LS3GATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 20A TSDSON-8
    BSZ100N06NSATMA1-CUT TAPE

    Mfr.#: BSZ100N06NSATMA1-CUT TAPE

    OMO.#: OMO-BSZ100N06NSATMA1-CUT-TAPE-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    5000
    Ingrese la cantidad:
    El precio actual de BSZ100N06LS3 G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,55 US$
    0,55 US$
    10
    0,52 US$
    5,22 US$
    100
    0,49 US$
    49,41 US$
    500
    0,47 US$
    233,35 US$
    1000
    0,44 US$
    439,20 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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