IXFB210N30P3

IXFB210N30P3
Mfr. #:
IXFB210N30P3
Fabricante:
Littelfuse
Descripción:
MOSFET N-Channel: Power MOSFET w/Fast Diode
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFB210N30P3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFB210N30P3 DatasheetIXFB210N30P3 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFB210N30P3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
PLUS-264-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
300 V
Id - Corriente de drenaje continua:
210 A
Rds On - Resistencia de la fuente de drenaje:
14.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
5 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
268 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.89 kW
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
26.59 mm
Longitud:
20.29 mm
Serie:
IXFB210N30
Tipo de transistor:
1 N-Channel
Escribe:
Polar3 HiPerFET Power MOSFET
Ancho:
5.31 mm
Marca:
IXYS
Transconductancia directa - Mín .:
60 S
Otoño:
13 ns
Tipo de producto:
MOSFET
Hora de levantarse:
25 ns
Cantidad de paquete de fábrica:
25
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
94 ns
Tiempo típico de retardo de encendido:
46 ns
Unidad de peso:
0.056438 oz
Tags
IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET TRANSISTOR, N CHANNEL, 210 A, 300 V, 0.0145 OHM, 10 V, 5 V ROHS COMPLIANT: YES
***Components
In a Tube of 25, N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3
***ical
Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264
***ure Electronics
300V, 210A, 14.5mOhm, N-Channel, PLUS264, Polar3 HiPerFET
***i-Key
MOSFET N-CH 300V 210A PLUS264
***p One Stop Global
POLAR3 HIPERFET POWER MOSFET
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 300V, 210A, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.89kW; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CANALE N, 300V, 210A, TO-264; Polarità Transistor:Canale N; Corrente Continua di Drain Id:210A; Tensione Drain Source Vds:300V; Resistenza di Attivazione Rds(on):0.0145ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:1.89kW; Modello Case Transistor:TO-264; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFB210N30P3
DISTI # V99:2348_15877078
IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 2643
  • 500:$14.2600
  • 250:$14.3400
  • 100:$15.7800
  • 50:$16.4200
  • 25:$17.3400
  • 10:$19.4200
  • 5:$19.9400
  • 1:$20.9800
IXFB210N30P3
DISTI # V36:1790_15877078
IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 2640
    IXFB210N30P3
    DISTI # IXFB210N30P3-ND
    IXYS CorporationMOSFET N-CH 300V 210A PLUS264
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    34In Stock
    • 500:$14.7420
    • 100:$16.6374
    • 25:$17.9012
    • 10:$19.4810
    • 1:$21.0600
    IXFB210N30P3
    DISTI # 32748824
    IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264100
    • 100:$16.4710
    • 25:$17.7222
    • 1:$20.8494
    IXFB210N30P3
    DISTI # 30535702
    IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 2643
    • 500:$14.2600
    • 250:$14.3400
    • 100:$15.7800
    • 50:$16.4200
    • 25:$17.3400
    • 10:$19.4200
    • 5:$19.9400
    • 1:$20.9800
    IXFB210N30P3
    DISTI # 68X2857
    IXYS CorporationMOSFET Transistor, N Channel, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V RoHS Compliant: Yes95
    • 250:$15.4200
    • 100:$16.8000
    • 50:$17.3100
    • 25:$18.0800
    • 10:$19.6700
    • 5:$20.2100
    • 1:$21.2700
    IXFB210N30P3
    DISTI # 747-IXFB210N30P3
    IXYS CorporationMOSFET N-Channel: Power MOSFET w/Fast Diode
    RoHS: Compliant
    411
    • 1:$21.0600
    • 5:$20.0100
    • 10:$19.4800
    • 25:$17.9000
    • 50:$17.1400
    • 100:$16.6300
    • 250:$15.2700
    • 500:$14.5300
    IXFB210N30P3
    DISTI # 8024357
    IXYS CorporationMOSFET 300V 210A POLAR3 HIPERFET PLUS264, EA5
    • 13:£16.8700
    • 1:£18.2900
    IXFB210N30P3
    DISTI # 8024357P
    IXYS CorporationMOSFET 300V 210A POLAR3 HIPERFET PLUS264, TU44
    • 13:£16.8700
    IXFB210N30P3
    DISTI # IXFB210N30P3
    IXYS CorporationTransistor: N-MOSFET,Polar3™,unipolar,300V,210A,1890W,250ns62
    • 1:$21.7700
    • 5:$19.6300
    • 25:$17.3700
    IXFB210N30P3
    DISTI # 2429705
    IXYS CorporationMOSFET, N CH, 300V, 210A, TO-264
    RoHS: Compliant
    95
    • 100:$25.2100
    • 25:$27.1300
    • 1:$31.9000
    IXFB210N30P3
    DISTI # 2429705
    IXYS CorporationMOSFET, N CH, 300V, 210A, TO-264102
    • 100:£13.2200
    • 50:£13.8700
    • 10:£14.2300
    • 5:£16.1900
    • 1:£16.7300
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    Mfr.#: ERJ-6ENF1001V

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    MOSFET N-CH 300V 192A SOT-227
    RM-0512S

    Mfr.#: RM-0512S

    OMO.#: OMO-RM-0512S-RECOM-POWER

    Isolated DC/DC Converters 0.25W DC/DC 1kV UNREG 5Vin 12Vout
    MF1/2DC4021F

    Mfr.#: MF1/2DC4021F

    OMO.#: OMO-MF1-2DC4021F-1088

    Metal Film Resistors - Through Hole 4.02K 1% 100PPM
    LTST-C171KGKT

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    Standard LEDs - SMD Green Clear 571nm
    Disponibilidad
    Valores:
    401
    En orden:
    2384
    Ingrese la cantidad:
    El precio actual de IXFB210N30P3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    21,06 US$
    21,06 US$
    5
    20,01 US$
    100,05 US$
    10
    19,48 US$
    194,80 US$
    25
    17,90 US$
    447,50 US$
    50
    17,14 US$
    857,00 US$
    100
    16,63 US$
    1 663,00 US$
    250
    15,27 US$
    3 817,50 US$
    500
    14,53 US$
    7 265,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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