IXFB100N50P vs IXFB100N vs IXFB100N50

 
PartNumberIXFB100N50PIXFB100NIXFB100N50
DescriptionMOSFET 100 Amps 500V 0.05 Ohms Rds
ManufacturerIXYS--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CasePLUS-264-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage500 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance49 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge240 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.25 kW--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameHiPerFET--
PackagingTube--
Height26.59 mm--
Length20.29 mm--
SeriesIXFB100N50--
Transistor Type1 N-Channel--
TypePolarHV HiPerFET Power MOSFET--
Width5.31 mm--
BrandIXYS--
Forward Transconductance Min50 S--
Fall Time26 ns--
Product TypeMOSFET--
Rise Time29 ns--
Factory Pack Quantity25--
SubcategoryMOSFETs--
Typical Turn Off Delay Time110 ns--
Typical Turn On Delay Time36 ns--
Unit Weight0.056438 oz--
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