PartNumber | IXFB100N50P | IXFB100N | IXFB100N50 |
Description | MOSFET 100 Amps 500V 0.05 Ohms Rds | ||
Manufacturer | IXYS | - | - |
Product Category | MOSFET | - | - |
RoHS | Y | - | - |
Technology | Si | - | - |
Mounting Style | Through Hole | - | - |
Package / Case | PLUS-264-3 | - | - |
Number of Channels | 1 Channel | - | - |
Transistor Polarity | N-Channel | - | - |
Vds Drain Source Breakdown Voltage | 500 V | - | - |
Id Continuous Drain Current | 100 A | - | - |
Rds On Drain Source Resistance | 49 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 5 V | - | - |
Vgs Gate Source Voltage | 30 V | - | - |
Qg Gate Charge | 240 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - |
Maximum Operating Temperature | + 150 C | - | - |
Pd Power Dissipation | 1.25 kW | - | - |
Configuration | Single | - | - |
Channel Mode | Enhancement | - | - |
Tradename | HiPerFET | - | - |
Packaging | Tube | - | - |
Height | 26.59 mm | - | - |
Length | 20.29 mm | - | - |
Series | IXFB100N50 | - | - |
Transistor Type | 1 N-Channel | - | - |
Type | PolarHV HiPerFET Power MOSFET | - | - |
Width | 5.31 mm | - | - |
Brand | IXYS | - | - |
Forward Transconductance Min | 50 S | - | - |
Fall Time | 26 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 29 ns | - | - |
Factory Pack Quantity | 25 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 110 ns | - | - |
Typical Turn On Delay Time | 36 ns | - | - |
Unit Weight | 0.056438 oz | - | - |