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IXFN210N30P3

IXFN210N30P3
Mfr. #:
IXFN210N30P3
Fabricante:
Littelfuse
Descripción:
MOSFET N-Channel: Power MOSFET w/Fast Diode
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN210N30P3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN210N30P3 DatasheetIXFN210N30P3 Datasheet (P4-P5)
ECAD Model:
Más información:
IXFN210N30P3 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
300 V
Id - Corriente de drenaje continua:
192 A
Rds On - Resistencia de la fuente de drenaje:
14.5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
268 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1.5 kW
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFN210N30
Tipo de transistor:
1 N-Channel
Marca:
IXYS
Otoño:
13 ns
Tipo de producto:
MOSFET
Hora de levantarse:
25 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
94 ns
Tiempo típico de retardo de encendido:
46 ns
Unidad de peso:
1.058219 oz
Tags
IXFN210, IXFN21, IXFN2, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    S***s
    S***s
    NL

    The board is defective. I already opened a dispute. After the refund I will update the feedback.

    2019-06-18
    S***l
    S***l
    RU

    All ok

    2019-03-13
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Parte # Mfg. Descripción Valores Precio
IXFN210N30P3
DISTI # V36:1790_15877066		IXYS CorporationTrans MOSFET N-CH 300V 192A 4-Pin SOT-227B
RoHS: Compliant		0
  • 10000:$20.9100
  • 5000:$20.9200
  • 1000:$24.2600
  • 100:$32.8800
  • 10:$34.5000
IXFN210N30P3
DISTI # IXFN210N30P3-ND		IXYS CorporationMOSFET N-CH 300V 192A SOT-227
RoHS: Compliant
Min Qty: 1
Container: Tube		59In Stock
  • 100:$27.2550
  • 30:$29.3250
  • 10:$31.9130
  • 1:$34.5000
IXFN210N30P3
DISTI # 747-IXFN210N30P3		IXYS CorporationMOSFET N-Channel: Power MOSFET w/Fast Diode
RoHS: Compliant		81
  • 1:$34.5000
  • 5:$32.7800
  • 10:$31.9100
  • 25:$29.3300
  • 50:$28.0800
  • 100:$27.2500
  • 200:$25.0100
IXFN210N30P3
DISTI # 8047593		IXYS CorporationMOSFET 300V 192A POLAR3 HIPERFET SOT227B, EA21
  • 25:£20.7200
  • 10:£21.4700
  • 5:£22.4600
  • 1:£24.9600
IXFN210N30P3
DISTI # IXFN210N30P3		IXYS CorporationModule,single transistor,300V,192A,SOT227B,Ugs: ±30V,screw10
  • 10:$28.3800
  • 3:$32.1000
  • 1:$35.7000
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Disponibilidad
Valores:
76
En orden:
2059
Ingrese la cantidad:
El precio actual de IXFN210N30P3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
34,50 US$
34,50 US$
5
32,78 US$
163,90 US$
10
31,91 US$
319,10 US$
25
29,33 US$
733,25 US$
50
28,08 US$
1 404,00 US$
100
27,25 US$
2 725,00 US$
200
25,01 US$
5 002,00 US$
500
23,81 US$
11 905,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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