IXFN30N120P

IXFN30N120P
Mfr. #:
IXFN30N120P
Fabricante:
IXYS
Descripción:
MOSFET 30 Amps 1200V 0.35 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN30N120P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN30N120P DatasheetIXFN30N120P Datasheet (P4)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXFN30N120
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
SMD / SMT
Nombre comercial
HyperFET
Paquete-Estuche
SOT-227-4
Tecnología
Si
Número de canales
1 Channel
Configuración
Fuente dual única
Tipo transistor
1 N-Channel
Disipación de potencia Pd
890 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
56 ns
Hora de levantarse
60 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
30 A
Vds-Drain-Source-Breakdown-Voltage
1200 V
Resistencia a la fuente de desagüe de Rds
350 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
95 ns
Tiempo de retardo de encendido típico
57 ns
Modo de canal
Mejora
Tags
IXFN30, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 1200V 30A SOT-227B
***omponent
IXYS Power Transistor Module
***el Nordic
Contact for details
Parte # Mfg. Descripción Valores Precio
IXFN30N120P
DISTI # IXFN30N120P-ND
IXYS CorporationMOSFET N-CH 1200V 30A SOT-227B
RoHS: Compliant
Min Qty: 10
Container: Tube
Temporarily Out of Stock
  • 10:$44.0110
IXFN30N120P
DISTI # 747-IXFN30N120P
IXYS CorporationMOSFET 30 Amps 1200V 0.35 Rds
RoHS: Compliant
5
  • 1:$47.0600
  • 5:$45.4100
  • 10:$44.0100
  • 25:$40.7000
  • 50:$39.5000
  • 100:$38.1600
  • 200:$35.6200
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Mfr.#: IXFN36-100

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Mfr.#: IXFN360N15

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Mfr.#: IXFN38N100

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Nuevo y original
IXFN36N60

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MOSFET 600V 36A
IXFN30N120P

Mfr.#: IXFN30N120P

OMO.#: OMO-IXFN30N120P-IXYS-CORPORATION

MOSFET 30 Amps 1200V 0.35 Rds
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IXFN30N120P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
53,43 US$
53,43 US$
10
50,76 US$
507,58 US$
100
48,09 US$
4 808,70 US$
500
45,42 US$
22 707,75 US$
1000
42,74 US$
42 744,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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