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IXFN360N15T2

IXFN360N15T2
Mfr. #:
IXFN360N15T2
Fabricante:
Littelfuse
Descripción:
MOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN360N15T2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN360N15T2 DatasheetIXFN360N15T2 Datasheet (P4-P6)
ECAD Model:
Más información:
IXFN360N15T2 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
150 V
Id - Corriente de drenaje continua:
310 A
Rds On - Resistencia de la fuente de drenaje:
4 mOhms
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Configuración:
Único
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
IXFN360N15
Tipo de transistor:
1 N-Channel
Escribe:
GigaMOS Trench T2 HiperFet
Marca:
IXYS
Otoño:
265 ns
Tipo de producto:
MOSFET
Hora de levantarse:
170 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Unidad de peso:
1.058219 oz
Tags
IXFN360, IXFN36, IXFN3, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 10, N-Channel MOSFET, 310 A, 150 V, 4-Pin SOT-227 IXYS IXFN360N15T2
***ure Electronics
N-Channel 150 V 1070 W 715 nC TranchT2 HiperFET Power MosFet SMT - SOT-227
***p One Stop Global
Trans MOSFET N-CH 150V 310A 4-Pin SOT-227B
***i-Key
MOSFET N-CH 150V 310A SOT227
***ukat
N-Ch 150V 310A 1070W 0,004R SOT227B
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
GigaMOS™ TrenchT2™ Power MOSFETs
IXYS GigaMOS™ TrenchT2™ standard and HiPerFET™ Power MOSFETs are offered with drain-to-source voltage ratings from 40V to 170V and provide high current capabilities of up to 600A (Tc=@25ºC). The combined high current ratings of these devices and available compact package options provide designers the ability to control more power within a smaller footprint. These new IXYS GigaMOS Power MOSFETs incorporate IXYS TrenchT2 Technology, allowing for improved channel density while achieving lower on-state resistance and gate charge to facilitate energy-efficient switching at high speeds. These IXYS GigaMOS TrenchT2 Power MOSFETs eliminate multiple paralleled lower current rated MOSFET devices and provide the ability to control more power within a smaller footprint. These devices are designed for use in a wide range of applications, including synchronous rectification, DC-DC converter, battery charger, and switch-mode and resonant-mode power supplies.
Parte # Mfg. Descripción Valores Precio
IXFN360N15T2
DISTI # V99:2348_15877372		IXYS CorporationTrans MOSFET N-CH 150V 310A 4-Pin SOT-227B
RoHS: Compliant		8
  • 250:$25.7600
  • 100:$28.3500
  • 25:$30.7900
  • 10:$33.8300
  • 1:$36.9099
IXFN360N15T2
DISTI # IXFN360N15T2-ND		IXYS CorporationMOSFET N-CH 150V 310A SOT227
RoHS: Compliant
Min Qty: 1
Container: Tube		913In Stock
  • 100:$29.2774
  • 30:$31.5010
  • 10:$34.2810
  • 1:$37.0600
IXFN360N15T2
DISTI # 32906835		IXYS CorporationTrans MOSFET N-CH 150V 310A 4-Pin SOT-227B
RoHS: Compliant		8
  • 1:$36.9099
IXFN360N15T2
DISTI # 747-IXFN360N15T2		IXYS CorporationMOSFET GigaMOS Trench T2 HiperFET PWR MOSFET
RoHS: Compliant		121
  • 1:$37.0600
  • 5:$35.2100
  • 10:$34.2800
  • 25:$31.5000
  • 50:$30.1600
  • 100:$29.2700
  • 200:$26.8600
IXFN360N15T2
DISTI # 1258042		IXYS CorporationMOSFET 360A 150V SOT227, EA135
  • 25:£21.9000
  • 10:£22.7000
  • 5:£23.7500
  • 1:£26.3900
IXFN360N15T2
DISTI # IXFN360N15T2		IXYS CorporationN-Ch 150V 310A 1070W 0,004R SOT227B
RoHS: Compliant		11
  • 1:€30.4500
  • 5:€26.4500
  • 10:€24.4500
  • 25:€23.5400
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Disponibilidad
Valores:
121
En orden:
2104
Ingrese la cantidad:
El precio actual de IXFN360N15T2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
37,06 US$
37,06 US$
5
35,21 US$
176,05 US$
10
34,28 US$
342,80 US$
25
31,50 US$
787,50 US$
50
30,16 US$
1 508,00 US$
100
29,27 US$
2 927,00 US$
200
26,86 US$
5 372,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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