IXFN30

IXFN300N10P vs IXFN300N20X3 vs IXFN30N110P

 
PartNumberIXFN300N10PIXFN300N20X3IXFN30N110P
DescriptionMOSFET Polar Power MOSFET HiPerFETMOSFET DISCMSFT NCHULTRJNCTX3CLAS (MIMOSFET N-CH 1100V 25A SOT-227B
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySi--
Mounting StyleChassis Mount--
Package / CaseSOT-227-4--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current295 A--
Rds On Drain Source Resistance5.5 mOhms--
Vgs th Gate Source Threshold Voltage5 V--
Vgs Gate Source Voltage20 V--
Qg Gate Charge279 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 175 C--
Pd Power Dissipation1.07 kW--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
Height12.22 mm--
Length38.23 mm--
SeriesIXFN300N10--
Transistor Type1 N-Channel--
TypePolar Power MOSFET HiPerFET--
Width25.42 mm--
BrandIXYSIXYS-
Forward Transconductance Min55 S--
Fall Time25 ns--
Product TypeMOSFETMOSFET-
Rise Time35 ns--
Factory Pack Quantity1010-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time56 ns--
Typical Turn On Delay Time36 ns--
Unit Weight1.058219 oz--
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXFN300N10P MOSFET Polar Power MOSFET HiPerFET
IXFN300N20X3 MOSFET DISCMSFT NCHULTRJNCTX3CLAS (MI
IXFN300N10P MOSFET N-CH 100V 295A SOT-227
IXFN300N20X3 200V/300A ULTRA JUNCTION X3-CLAS
IXFN30N110P MOSFET N-CH 1100V 25A SOT-227B
IXFN30N120P MOSFET 30 Amps 1200V 0.35 Rds
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