RGTH40TS65DGC11

RGTH40TS65DGC11
Mfr. #:
RGTH40TS65DGC11
Fabricante:
ROHM Semiconductor
Descripción:
IGBT Transistors 650V 20A IGBT Stop Trench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RGTH40TS65DGC11 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RGTH40TS65DGC11 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
40 A
Pd - Disipación de energía:
144 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
RGTH40TS65
Embalaje:
Tubo
Corriente continua de colector Ic Max:
85 A
Rango de temperatura de funcionamiento:
- 40 C to + 175 C
Marca:
Semiconductor ROHM
Corriente continua del colector:
20 A
Corriente de fuga puerta-emisor:
+/- 200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Parte # Alias:
RGTH40TS65D
Unidad de peso:
1.340411 oz
Tags
RGTH40TS, RGTH4, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***roFlash
Trans IGBT Chip N-CH 650V 40A 144000mW 3-Pin(3+Tab) TO-247N Bulk
***ure Electronics
650V 20A TO-247N Field Stop Trench IGBT
***ark
Igbt, Single, 650V, 40A, To-247N-3; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:144W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes
***i-Key
IGBT TRNCH FIELD 650V 40A TO247N
***ical
Trans IGBT Chip N-CH 650V 40A 168000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 20 A high speed
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 40A I(C), 650V V(BR)CES, N-Channel
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
***p One Stop Global
Trans IGBT Chip N-CH 600V 40A 220000mW 3-Pin(3+Tab) TO-247AC Tube
***ure Electronics
IRGP20B60PDPbF Series 600 V 22 A N-Channel UltraFast IGBT - TO-247AC
***ineon SCT
600V Warp2 150kHz Copack IGBT in a TO-247AC package, TO247COPAK-3, RoHS
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 2.6 V Current release time: 6 ns Power dissipation: 220 W
***ment14 APAC
IGBT, 600V, 40A, TO-247AC; Transistor Type:IGBT; DC Collector Current:40A; Collector Emitter Voltage Vces:2.35V; Power Dissipation Pd:220W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:40A; Device Marking:IRGP20B60PDPbF; Package / Case:TO-247AC; Power Dissipation Max:220W; Power Dissipation Pd:220W; Power Dissipation Pd:220W; Pulsed Current Icm:80A; Rise Time:5ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 30 A high speed
***ical
Trans IGBT Chip N-CH 650V 60A 260000mW 3-Pin(3+Tab) TO-247 Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Transistor, Igbt, 650V, 60A, To-247 Rohs Compliant: Yes
*** Services
CoC and 2-years warranty / RFQ for pricing
***p One Stop Global
Trans IGBT Chip N-CH 600V 34A 100000mW 3-Pin(3+Tab) TO-247AC Tube
***ineon SCT
600V DC-1 kHz (Standard) Discrete IGBT in a TO-247AC package, TO247-3, RoHS
***ure Electronics
IRG4PC30SPbF Series 600 V 34 A Flange Mount Standard Speed IGBT - TO-247AC
***trelec
IGBT Housing type: TO-247AC Collector-emitter breakdown voltage: 600 V Collector-emitter saturation voltage: 1.4 V Current release time: 390 ns Power dissipation: 100 W
***nell
IGBT, TO-247AC; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:34A; Voltage, Vce Sat Max:1.6V; Power Dissipation:100W; Case Style:TO-247AC; Termination Type:Through Hole; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:68A; No. of Pins:3; Power, Pd:100W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall Max:590ns; Time, Rise:19ns; Transistors, No. of:1
***ical
Trans IGBT Chip N-CH 600V 32A 140000mW 3-Pin(3+Tab) TO-247AD Tube
***nell
IGBT, SINGLE, 600V, 32A, TO-247AD-3; DC Collector Current: 32A; Collector Emitter Saturation Voltage Vce(on): 1.55V; Power Dissipation Pd: 140W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247AD; No. o
***ark
Igbt, 600V, 32A, 140W, To-247Ad; Continuous Collector Current:32A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes
***Yang
TO-247, SINGLE, N-CHANNEL, 600V SMPS IGBT - Bulk
*** Electronic Components
IGBT Transistors Sgl N-Ch 600V SMPS
***nell
IGBT, N, TO-247; Transistor Type:IGBT; Transistor Polarity:N; Voltage, Vces:600V; Current Ic Continuous a Max:45A; Voltage, Vce Sat Max:2.5V; Power Dissipation:167W; Case Style:TO-247; Alternate Case Style:SOT-249; Collector-to-Emitter Breakdown Voltage:600V; Current, Icm Pulsed:108A; No. of Pins:3; Pin Format:GCE; Power, Pd:167W; Power, Ptot:167W; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Time, Fall:53ns; Time, Rise:10ns; Transistors, No. of:1
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descripción Valores Precio
RGTH40TS65DGC11
DISTI # RGTH40TS65DGC11-ND
ROHM SemiconductorIGBT 650V 40A 144W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube
Temporarily Out of Stock
  • 2520:$1.2460
  • 510:$1.5575
  • 120:$1.8957
  • 30:$2.2250
  • 10:$2.3590
  • 1:$2.6300
RGTH40TS65DGC11
DISTI # RGTH40TS65DGC11
ROHM SemiconductorTrans IGBT Chip N-CH 650V 40A 3-Pin TO-247N Tube (Alt: RGTH40TS65DGC11)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 5000:€1.2075
  • 1000:€1.2420
  • 500:€1.5295
  • 100:€1.6790
  • 25:€2.2425
  • 1:€2.5760
RGTH40TS65DGC11
DISTI # RGTH40TS65DGC11
ROHM SemiconductorTrans IGBT Chip N-CH 650V 40A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH40TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 2700:$1.0900
  • 4500:$1.0900
  • 1800:$1.1900
  • 900:$1.2900
  • 450:$1.3900
RGTH40TS65DGC11
DISTI # 76Y4973
ROHM SemiconductorIGBT, SINGLE, 650V, 40A, TO-247N-3,DC Collector Current:40A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:144W,Collector Emitter Voltage V(br)ceo:650V,Transistor Case Style:TO-247N,No. of Pins:3Pins,RoHS Compliant: Yes400
  • 5000:$1.1600
  • 2500:$1.2000
  • 1000:$1.4800
  • 500:$1.6500
  • 100:$1.7800
  • 10:$2.2200
  • 1:$2.6100
RGTH40TS65DGC11
DISTI # 755-RGTH40TS65DGC11
ROHM SemiconductorIGBT Transistors 650V 20A IGBT Stop Trench
RoHS: Compliant
554
  • 1:$2.6200
  • 10:$2.2300
  • 100:$1.7800
  • 500:$1.5600
  • 1000:$1.3000
  • 2500:$1.2100
  • 5000:$1.1600
RGTH40TS65DGC11
DISTI # 1501475
ROHM SemiconductorIGBT N-CHANNEL 40A 650V TRENCH TO-247, PK5
  • 250:£1.3860
  • 50:£1.4660
  • 25:£1.5680
  • 10:£1.7920
  • 5:£2.0380
RGTH40TS65DGC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***24
  • 22:$3.2200
  • 7:$3.5420
  • 1:$4.8300
RGTH40TS65DGC11
DISTI # 2519792
ROHM SemiconductorIGBT, SINGLE, 650V, 40A, TO-247N-3
RoHS: Compliant
400
  • 30:$3.3800
  • 10:$3.5900
  • 1:$3.9900
RGTH40TS65DGC11
DISTI # 2519792
ROHM SemiconductorIGBT, SINGLE, 650V, 40A, TO-247N-3400
  • 500:£1.3300
  • 250:£1.4100
  • 100:£1.4900
  • 10:£1.5600
  • 1:£2.0800
RGTH40TS65DGC11ROHM Semiconductor 30
  • 1:¥37.9835
  • 100:¥21.5366
  • 450:¥13.6542
RGTH40TS65DGC11ROHM SemiconductorIGBT Transistors 650V 20A IGBT Stop Trench
RoHS: Compliant
Americas -
    RGTH40TS65DGC11ROHM SemiconductorRoHS(ship within 1day)30
    • 1:$3.1800
    • 10:$2.3900
    • 50:$2.1000
    • 100:$1.8000
    • 500:$1.6700
    • 1000:$1.6100
    Imagen Parte # Descripción
    IKW15N120H3FKSA1

    Mfr.#: IKW15N120H3FKSA1

    OMO.#: OMO-IKW15N120H3FKSA1

    IGBT Transistors IGBT PRODUCTS
    IXYH30N65C3H1

    Mfr.#: IXYH30N65C3H1

    OMO.#: OMO-IXYH30N65C3H1

    IGBT Transistors 650V/60A XPT C3 Copacked TO-247
    IXYH40N65C3H1

    Mfr.#: IXYH40N65C3H1

    OMO.#: OMO-IXYH40N65C3H1

    IGBT Transistors 650V/80A XPT Copacked TO-247
    IXYP10N65C3D1

    Mfr.#: IXYP10N65C3D1

    OMO.#: OMO-IXYP10N65C3D1

    IGBT Transistors DISC IGBT XPT-GENX3
    IXYP10N65C3D1

    Mfr.#: IXYP10N65C3D1

    OMO.#: OMO-IXYP10N65C3D1-IXYS-CORPORATION

    IGBT 650V 30A 160W TO-220
    IKW15N120H3FKSA1

    Mfr.#: IKW15N120H3FKSA1

    OMO.#: OMO-IKW15N120H3FKSA1-INFINEON-TECHNOLOGIES

    IGBT 1200V 30A 217W TO247-3
    IXYH40N65C3H1

    Mfr.#: IXYH40N65C3H1

    OMO.#: OMO-IXYH40N65C3H1-IXYS-CORPORATION

    IGBT Transistors 650V/80A XPT Copacked TO-247
    IXYH30N65C3H1

    Mfr.#: IXYH30N65C3H1

    OMO.#: OMO-IXYH30N65C3H1-IXYS-CORPORATION

    IGBT Transistors 650V/60A XPT C3 Copacked TO-247
    Disponibilidad
    Valores:
    Available
    En orden:
    1984
    Ingrese la cantidad:
    El precio actual de RGTH40TS65DGC11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,62 US$
    2,62 US$
    10
    2,23 US$
    22,30 US$
    100
    1,78 US$
    178,00 US$
    500
    1,56 US$
    780,00 US$
    1000
    1,30 US$
    1 300,00 US$
    2500
    1,21 US$
    3 025,00 US$
    5000
    1,16 US$
    5 800,00 US$
    10000
    1,12 US$
    11 200,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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