PartNumber | RGTH40TK65GC11 | RGTH40TK65DGC11 | RGTH40TS65 |
Description | IGBT Transistors IGBT HIGH VOLT AND CURRENT AP | IGBT Transistors IGBT HIGH VOLT AND CURRENT AP | |
Manufacturer | ROHM Semiconductor | ROHM Semiconductor | - |
Product Category | IGBT Transistors | IGBT Transistors | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Package / Case | TO-3PFM | TO-3PFM | - |
Mounting Style | Through Hole | Through Hole | - |
Configuration | Single | Single | - |
Collector Emitter Voltage VCEO Max | 650 V | 650 V | - |
Collector Emitter Saturation Voltage | 1.6 V | 1.6 V | - |
Maximum Gate Emitter Voltage | 30 V | 30 V | - |
Continuous Collector Current at 25 C | 23 A | 23 A | - |
Pd Power Dissipation | 56 W | 56 W | - |
Minimum Operating Temperature | - 40 C | - 40 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Packaging | Tube | Tube | - |
Brand | ROHM Semiconductor | ROHM Semiconductor | - |
Gate Emitter Leakage Current | 200 nA | 200 nA | - |
Product Type | IGBT Transistors | IGBT Transistors | - |
Factory Pack Quantity | 30 | 30 | - |
Subcategory | IGBTs | IGBTs | - |
Part # Aliases | RGTH40TK65 | RGTH40TK65D | - |