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IXYH30N65C3H1

IXYH30N65C3H1
Mfr. #:
IXYH30N65C3H1
Fabricante:
Littelfuse
Descripción:
IGBT Transistors 650V/60A XPT C3 Copacked TO-247
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXYH30N65C3H1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXYH30N65C3H1 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
IGBTs - Single
Serie
GenX3, XPT
embalaje
Tubo
Unidad de peso
1.340411 oz
Estilo de montaje
A través del orificio
Nombre comercial
XPT
Paquete-Estuche
TO-247-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-247 (IXYH)
Configuración
Único
Potencia máxima
270W
Tiempo de recuperación inverso trr
120ns
Colector-corriente-Ic-Max
60A
Voltaje-Colector-Emisor-Ruptura-Máx.
650V
Tipo IGBT
PT
Colector de corriente pulsado Icm
118A
Vce-en-Max-Vge-Ic
2.7V @ 15V, 30A
Energía de conmutación
1mJ (on), 270μJ (off)
Gate-Charge
44nC
Td-encendido-apagado-25 ° C
21ns/75ns
Condición de prueba
400V, 30A, 10 Ohm, 15V
Disipación de potencia Pd
270 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Colector-Emisor-Voltaje-VCEO-Max
650 V
Colector-Emisor-Saturación-Voltaje
2.35 V
Corriente-de-colector-continuo-a-25-C
60 A
Puerta-Emisor-Fuga-Corriente
100 nA
Voltaje máximo del emisor de puerta
30 V
Colector-continuo-Corriente-Ic-Max
60 A
Tags
IXYH30N6, IXYH3, IXYH, IXY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
IGBT 650V 60A 270W TO247
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
650V XPT™ High Speed Trench IGBTs
IXYS 650V XPT™ High Speed Trench IGBTs are designed to minimize conduction and switching losses, especially in hard-switching applications. IXYS 650V XPT™ High Speed Trench IGBTs are optimized for different switching speed ranges (up to 60kHz). Devices co-packed with IXYS ultra-fast Sonic-FRD™ diodes are also available. The current ratings of devices in this product family range from 30A to 200A at a high temperature of 110°C. These devices feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. In addition, they display exceptional ruggedness under short-circuit conditions – a 10μs Short Circuit Safe Operating Area (SCSOA). Moreover these IGBTs have square Reverse Bias Safe Operating Areas (RBSOA) up to the breakdown voltage of 650V, making them ideal for snubber-less hard-switching applications. Other qualities include a positive collector-to-emitter voltage temperature coefficient which enables designers to use multiple devices in parallel to meet high current requirements and low gate charges which help reduce gate drive requirements and switching losses. Thanks to its speed and ‘soft recovery’ characteristics, the co-packed Sonic-FRD™ diode is an ideal match for these XPT™ IGBTs in reducing turn-on and turn-off losses. It is optimized to suppress ringing oscillations and voltage spikes in recovery, thereby producing smooth switching waveforms and significantly lowering electromagnetic interference (EMI) in the process. The temperature stability of its forward voltage also helps lower switching losses when devices are operated in parallel. The new IGBTs are well-suited for a wide variety of power conversion applications, including lighting control, battery chargers, motor drives, power inverters, power factor correction circuits, switch-mode power supplies, uninterruptible power supplies, E-Bikes, and welding machines.Learn More
Parte # Mfg. Descripción Valores Precio
IXYH30N65C3H1
DISTI # IXYH30N65C3H1-ND		IXYS CorporationIGBT 650V 60A 270W TO247
RoHS: Compliant
Min Qty: 30
Container: Tube		Temporarily Out of Stock
  • 30:$5.3813
IXYH30N65C3H1
DISTI # 747-IXYH30N65C3H1		IXYS CorporationIGBT Transistors 650V/60A XPT C3 Copacked TO-247
RoHS: Compliant		210
  • 1:$6.5600
  • 10:$5.9100
  • 25:$5.3800
  • 50:$4.9200
  • 100:$4.8600
  • 250:$4.4300
  • 500:$4.0700
  • 1000:$3.5400
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Mfr.#: IXYH30N120B4

OMO.#: OMO-IXYH30N120B4

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IXYH30N450HV

Mfr.#: IXYH30N450HV

OMO.#: OMO-IXYH30N450HV-IXYS-CORPORATION

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IXYH30N170C

Mfr.#: IXYH30N170C

OMO.#: OMO-IXYH30N170C-IXYS-CORPORATION

 1700V/108A HIGH VOLTAGE XPT IGB
IXYH30N120C3

Mfr.#: IXYH30N120C3

OMO.#: OMO-IXYH30N120C3-IXYS-CORPORATION

 IGBT Transistors 1200V XPT GenX3 IGBT
IXYH30N120C3D1

Mfr.#: IXYH30N120C3D1

OMO.#: OMO-IXYH30N120C3D1-IXYS-CORPORATION

 IGBT Transistors XPT 1200V IGBT GenX4 XPT IGBT
IXYH30N65C3H1

Mfr.#: IXYH30N65C3H1

OMO.#: OMO-IXYH30N65C3H1-IXYS-CORPORATION

 IGBT Transistors 650V/60A XPT C3 Copacked TO-247
Disponibilidad
Valores:
Available
En orden:
3000
Ingrese la cantidad:
El precio actual de IXYH30N65C3H1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,31 US$
5,31 US$
10
5,04 US$
50,44 US$
100
4,78 US$
477,90 US$
500
4,51 US$
2 256,75 US$
1000
4,25 US$
4 248,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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