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SIHD14N60E-GE3

SIHD14N60E-GE3
Mfr. #:
SIHD14N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs DPAK (TO-252)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHD14N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD14N60E-GE3 DatasheetSIHD14N60E-GE3 Datasheet (P4-P6)SIHD14N60E-GE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
13 A
Rds On - Resistencia de la fuente de drenaje:
269 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
32 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
147 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Serie:
SIH
Marca:
Vishay / Siliconix
Otoño:
15 ns
Tipo de producto:
MOSFET
Hora de levantarse:
19 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35 ns
Tiempo típico de retardo de encendido:
15 ns
Unidad de peso:
0.011993 oz
Tags
SIHD1, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
SIHD14N60E Series 600 V 13 A 269 mOhm 147 W SMT N-Channel Power MOSFET - TO-252
***ical
Trans MOSFET N-CH 600V 13A 3-Pin(2+Tab) DPAK
*** Europe
N-CH SINGLE 600V TO252
***ark
N-Channel 600V
Parte # Mfg. Descripción Valores Precio
SIHD14N60E-GE3
DISTI # V99:2348_17600318		Vishay IntertechnologiesPower MOSFET3000
  • 3000:$1.0035
  • 1000:$1.0684
  • 500:$1.2481
  • 100:$1.4741
  • 10:$1.8975
  • 1:$2.5074
SIHD14N60E-GE3
DISTI # SIHD14N60E-GE3-ND		Vishay SiliconixMOSFET N-CHANNEL 600V 13A DPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2782In Stock
  • 6000:$1.0115
  • 3000:$1.0504
  • 500:$1.3616
  • 100:$1.6572
  • 25:$1.9452
  • 10:$2.0620
  • 1:$2.3000
SIHD14N60E-GE3
DISTI # 32729386		Vishay IntertechnologiesPower MOSFET3000
  • 7:$2.5074
SIHD14N60E-GE3
DISTI # SIHD14N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 13A 3-Pin TO-252 (Alt: SIHD14N60E-GE3)
RoHS: Compliant
Min Qty: 3000		Europe - 50
  • 30000:€0.9719
  • 18000:€1.0279
  • 12000:€1.1579
  • 6000:€1.4039
  • 3000:€2.0039
SIHD14N60E-GE3
DISTI # SIHD14N60E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 13A 3-Pin TO-252 - Tape and Reel (Alt: SIHD14N60E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.9499
  • 18000:$0.9759
  • 12000:$1.0039
  • 6000:$1.0459
  • 3000:$1.0779
SIHD14N60E-GE3
DISTI # 20AC3801		Vishay IntertechnologiesN-CHANNEL 600V0
  • 2500:$0.9710
  • 1000:$1.0900
  • 500:$1.2500
  • 100:$1.3900
  • 50:$1.5700
  • 25:$1.7100
  • 10:$1.8500
  • 1:$2.2600
SIHD14N60E-GE3
DISTI # 78-SIHD14N60E-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		2614
  • 1:$2.3000
  • 10:$1.9100
  • 100:$1.4800
  • 500:$1.2900
  • 1000:$1.0700
  • 3000:$1.0000
  • 6000:$0.9630
SIHD14N60E-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		Americas -
    Imagen Parte # Descripción
    UCC24636DBVR

    Mfr.#: UCC24636DBVR

    OMO.#: OMO-UCC24636DBVR

    		 Gate Drivers SR CONTROLLER FOR DCM APPLICATIONS
    STF23N80K5

    Mfr.#: STF23N80K5

    OMO.#: OMO-STF23N80K5

    		 MOSFET N-channel 800 V, 0.23 Ohm typ., 16 A MDmesh K5 Power MOSFET in TO-220FP package
    SIHD9N60E-GE3

    Mfr.#: SIHD9N60E-GE3

    OMO.#: OMO-SIHD9N60E-GE3

    		 MOSFET 600V Vds 30V Vgs DPAK (TO-252)
    CRCW08051M00FKEAC

    Mfr.#: CRCW08051M00FKEAC

    OMO.#: OMO-CRCW08051M00FKEAC

    		 Thick Film Resistors - SMD 1/8Watt 1Mohms 1% Commercial Use
    C0603C104M5RACTU

    Mfr.#: C0603C104M5RACTU

    OMO.#: OMO-C0603C104M5RACTU

    		 Multilayer Ceramic Capacitors MLCC - SMD/SMT 50V 0.1uF 0603 X7R 20%
    T521B475M035ATE150

    Mfr.#: T521B475M035ATE150

    OMO.#: OMO-T521B475M035ATE150

    		 Tantalum Capacitors - Polymer SMD 35V 4.7uF 1311 20% ESR=150mOhms
    CRCW0603220KFKEAC

    Mfr.#: CRCW0603220KFKEAC

    OMO.#: OMO-CRCW0603220KFKEAC

    		 Thick Film Resistors - SMD 1/10Watt 220Kohms 1% Commercial Use
    KTR10EZPF7502

    Mfr.#: KTR10EZPF7502

    OMO.#: OMO-KTR10EZPF7502-ROHM-SEMI

    		 RES SMD 75K OHM 1% 1/8W 0805
    STF23N80K5

    Mfr.#: STF23N80K5

    OMO.#: OMO-STF23N80K5-STMICROELECTRONICS

    		 MOSFET N-CH 800V 16A
    CRCW08051M00FKEAC

    Mfr.#: CRCW08051M00FKEAC

    OMO.#: OMO-CRCW08051M00FKEAC-VISHAY-DALE

    		 D12/CRCW0805-C 100 1M0 1% ET1
    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de SIHD14N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,30 US$
    2,30 US$
    10
    1,91 US$
    19,10 US$
    100
    1,48 US$
    148,00 US$
    500
    1,29 US$
    645,00 US$
    1000
    1,07 US$
    1 070,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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