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IXFH15N100

IXFH15N100
Mfr. #:
IXFH15N100
Fabricante:
IXYS
Descripción:
MOSFET 15 Amps 1000V 0.7 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFH15N100 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
IXFH15N100
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
A través del orificio
Nombre comercial
HyperFET
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
360 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
30 ns
Hora de levantarse
30 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
15 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Resistencia a la fuente de desagüe de Rds
700 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
120 ns
Tiempo de retardo de encendido típico
27 ns
Modo de canal
Mejora
Tags
IXFH15N1, IXFH15N, IXFH15, IXFH1, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:15A; Source Voltage Vds:1kV; On Resistance Rds(on):0.7ohm;
***i-Key
MOSFET N-CH 1000V 15A TO-247
***el Electronic
IC UART FIFO 16B DUAL 48TQFP
***el Nordic
Contact for details
***icroelectronics
N-CHANNEL 1000V 0.56 Ohm 13.5A TO-247 ZENER-PROTECTED SUPERMESH™ POWER MOSFET
***ure Electronics
N-Channel 1 kV 0.7 O 350 W Zener Protected SuperMESH Power MosFet - TO-247
***ark
N Channel Mosfet, 1Kv, 13A, To-247; Transistor Polarity:n Channel; Drain Source Voltage Vds:1Kv; Continuous Drain Current Id:13A; On Resistance Rds(On):0.7Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 13A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***icroelectronics
N-CHANNEL 900V - 0.40͐2;6; - 15A - TO-247 Zener-Protected SuperMESH™ MOSFET
***ure Electronics
N Channel 900 V 0.4 O Flange Mount SuperMESH Power Mosfet - TO-247
***nell
MOSFET, N CH, 900V, 15A, TO-247; Transistor Polarity: N Channel; Continuous Drain Current Id: 9.5A; Drain Source Voltage Vds: 900V; On Resistance Rds(on): 0.4ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Po
***r Electronics
Power Field-Effect Transistor, 15A I(D), 900V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***icroelectronics
N-channel 900 V, 0.72 Ohm, 11 A, TO-247 Zener-protected SuperMESH(TM) Power MOSFET
***ure Electronics
N-Channel 900 V 0.88 Ohm Flange Mount SuperMESH Power MosFet - TO-247-3
***ource
TRANSISTOR | MOSFET | N-CHANNEL | 600V VBRDSS | 12A ID | TO-247
***ark
MOSFET, N-CH, 900V, 11A, TO-247; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V RoHS Compliant: Yes
***r Electronics
Power Field-Effect Transistor, 11A I(D), 900V, 0.88ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***ure Electronics
Single N-Channel 800 V 450 Ohm 64 nC CoolMOS™ Power Mosfet - TO-247-3
***ment14 APAC
MOSFET, N, COOLMOS, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:6A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:125W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-93; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:TO-218; Current Id Max:11A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:5.45mm; No. of Transistors:1; Package / Case:SOT-93; Power Dissipation Pd:125W; Power Dissipation Pd:125W; Power Dissipation Ptot Max:125W; Pulse Current Idm:24A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 11 / Drain-Source Voltage (Vds) V = 800 / ON Resistance (Rds(on)) mOhm = 450 / Gate-Source Voltage V = 20 / Fall Time ns = 10 / Rise Time ns = 15 / Turn-OFF Delay Time ns = 72 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-247 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 156
***ineon
800V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance; (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting; Solar
***ical
Trans MOSFET N-CH 900V 11A Automotive 3-Pin(3+Tab) TO-247 Tube
*** Stop Electro
Power Field-Effect Transistor, 11A I(D), 900V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:11A; Drain Source Voltage Vds:900V; On Resistance Rds(on):500mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:156W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 3 - 168 hours; SVHC:No SVHC (20-Jun-2011); Current Id Max:11A; Package / Case:TO-247; Power Dissipation Pd:156W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:900V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V
***ineon
900V CoolMOS C3 is Infineon's third series of CoolMOS with market entry in 2001. C3 is the "working horse" of the portfolio. | Summary of Features: Low specific on-state resistance (R on*A); Very low energy storage in output capacitance (E oss) @400V; Low gate charge (Q g); Fieldproven CoolMOS quality; CoolMOS technology has been manufactured by Infineon since 1998 | Benefits: High efficiency and power density; Outstanding cost/performance; High reliability; Ease-of-use | Target Applications: Consumer; PC power; Adapter; Lighting
Parte # Mfg. Descripción Valores Precio
IXFH15N100Q3
DISTI # 33102012		IXYS CorporationTrans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247
RoHS: Compliant		60
  • 2:$7.0800
IXFH15N100Q3
DISTI # IXFH15N100Q3-ND		IXYS CorporationMOSFET N-CH 1000V 15A TO-247
RoHS: Compliant
Min Qty: 1
Container: Tube		246In Stock
  • 1020:$7.5040
  • 510:$7.7720
  • 120:$9.1120
  • 30:$9.9160
  • 1:$11.7900
IXFH15N100
DISTI # IXFH15N100-ND		IXYS CorporationMOSFET N-CH 1000V 15A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube		Limited Supply - Call
    IXFH15N100Q
    DISTI # IXFH15N100Q-ND    		IXYS CorporationMOSFET N-CH 1000V 15A TO-247
    RoHS: Compliant
    Min Qty: 30
    Container: Tube    		Limited Supply - Call
      IXFH15N100P
      DISTI # IXFH15N100P-ND      		IXYS CorporationMOSFET N-CH 1000V 15A TO-247
      RoHS: Compliant
      Min Qty: 30
      Container: Tube      		Temporarily Out of Stock
      • 30:$6.8267
      IXFH15N100P
      DISTI # V36:1790_15877350      		IXYS CorporationTrans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247
      RoHS: Compliant      		0
        IXFH15N100Q3
        DISTI # V36:1790_15877354        		IXYS CorporationTrans MOSFET N-CH 1KV 15A 3-Pin(3+Tab) TO-247
        RoHS: Compliant        		0
          IXFH15N100
          DISTI # 97K2539          		IXYS CorporationMOSFET, N, 15A, 1 KV,TO-247,Transistor Polarity:N Channel,Continuous Drain Current Id:15A,Drain Source Voltage Vds:1kV,On Resistance Rds(on):0.7ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4.5V,No. of Pins:3Pins RoHS Compliant: Yes0
            IXFH15N100P
            DISTI # 03AH0529            		Littelfuse IncDISCMOSFETN-CH HIPERFET-POLAR TO-247AD / TUBE0
            • 500:$4.1700
            • 250:$4.5000
            • 100:$4.7300
            • 50:$5.3300
            • 25:$5.7600
            • 10:$6.6600
            • 1:$7.0000
            IXFH15N100Q3
            DISTI # 03AH0530            		Littelfuse IncDISCMSFT NCHHIPERFET-Q3 CLASS TO-247AD / TUBE0
            • 500:$6.7000
            • 250:$7.2400
            • 100:$7.5100
            • 50:$8.0400
            • 25:$9.1700
            • 10:$9.8700
            • 1:$10.4000
            IXFH15N100
            DISTI # 747-IXFH15N100            		IXYS CorporationMOSFET 15 Amps 1000V 0.7 Rds
            RoHS: Compliant            		0
              IXFH15N100Q3
              DISTI # 747-IXFH15N100Q3              		IXYS CorporationMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A
              RoHS: Compliant              		690
              • 1:$13.5600
              • 10:$12.3300
              • 25:$11.4000
              • 50:$10.4900
              • 100:$10.2300
              • 250:$9.3800
              • 500:$8.5100
              • 1000:$7.7700
              IXFH15N100P
              DISTI # 747-IXFH15N100P              		IXYS CorporationMOSFET 15 Amps 1000V 0.76 Rds
              RoHS: Compliant              		46
              • 1:$9.5700
              • 10:$8.6200
              • 25:$7.1700
              • 50:$6.6600
              • 100:$6.5100
              • 250:$5.9500
              • 500:$5.4200
              • 1000:$5.1700
              IXFH15N100Q
              DISTI # 747-IXFH15N100Q              		IXYS CorporationMOSFET 15 Amps 1000V 0.725 Rds
              RoHS: Compliant              		0
                IXFH15N100Q3
                DISTI # 8011389P                		IXYS CorporationMOSFET N-CH 1000V 15A Q3 HIPERFET TO247, TU1242
                • 15:£8.5200
                • 6:£8.9000
                IXFH15N100Q3
                DISTI # 8011389                		IXYS CorporationMOSFET N-CH 1000V 15A Q3 HIPERFET TO247, EA16
                • 15:£8.5200
                • 6:£8.9000
                • 1:£9.2800
                IXFH15N100Q3
                DISTI # IXFH15N100Q3                		IXYS CorporationTransistor: N-MOSFET,Q3-Class,unipolar,1kV,15A,690W,TO247-354
                • 1:$10.9700
                • 3:$9.8700
                • 10:$8.7200
                • 30:$7.8300
                IXFH15N100Q  41
                  IXFH15N100
                  DISTI # 9359583                  		IXYS CorporationMOSFET, N, TO-247
                  RoHS: Compliant                  		0
                  • 25:$18.5900
                  • 10:$19.6400
                  • 1:$20.0200
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                  Disponibilidad
                  Valores:
                  Available
                  En orden:
                  5500
                  Ingrese la cantidad:
                  El precio actual de IXFH15N100 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
                  Precio de referencia (USD)
                  Cantidad
                  Precio unitario
                  Ext. Precio
                  1
                  15,04 US$
                  15,04 US$
                  10
                  14,29 US$
                  142,93 US$
                  100
                  13,54 US$
                  1 354,05 US$
                  500
                  12,79 US$
                  6 394,15 US$
                  1000
                  12,04 US$
                  12 036,00 US$
                  Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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