IXFH15N

IXFH15N100Q3 vs IXFH15N100P vs IXFH15N60

 
PartNumberIXFH15N100Q3IXFH15N100PIXFH15N60
DescriptionMOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15AMOSFET 15 Amps 1000V 0.76 RdsMOSFET 15 Amps 600V
ManufacturerIXYSIXYSIXYS
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-247-3TO-247-3TO-247-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage1 kV1 kV600 V
Id Continuous Drain Current15 A15 A15 A
Rds On Drain Source Resistance1.05 Ohms760 mOhms500 mOhms
Vgs Gate Source Voltage30 V30 V20 V
Qg Gate Charge64 nC97 nC-
Pd Power Dissipation690 W543 W300 W
ConfigurationSingleSingleSingle
TradenameHiPerFETHiPerFETHyperFET
PackagingTubeTubeTube
SeriesIXFH15N100IXFH15N100PIXFH15N60
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandIXYSIXYSIXYS
Product TypeMOSFETMOSFETMOSFET
Rise Time250 ns44 ns43 ns
Factory Pack Quantity303030
SubcategoryMOSFETsMOSFETsMOSFETs
Unit Weight0.056438 oz0.229281 oz0.229281 oz
Vgs th Gate Source Threshold Voltage-6.5 V-
Minimum Operating Temperature-- 55 C- 55 C
Maximum Operating Temperature-+ 150 C+ 150 C
Channel Mode-EnhancementEnhancement
Height-21.46 mm21.46 mm
Length-16.26 mm16.26 mm
Type-Polar Power MOSFET HiPerFET-
Width-5.3 mm5.3 mm
Forward Transconductance Min-6.5 S-
Fall Time-58 ns40 ns
Typical Turn Off Delay Time-44 ns70 ns
Typical Turn On Delay Time-41 ns20 ns
Fabricante Parte # Descripción RFQ
Littelfuse
Littelfuse
IXFH15N100Q3 MOSFET Q3Class HiPerFET Pwr MOSFET 1000V/15A
IXFH15N100P MOSFET 15 Amps 1000V 0.76 Rds
IXFH15N80 MOSFET 800V 15A
IXFH15N80Q MOSFET 800V 15A
IXFH15N60 MOSFET 15 Amps 600V
IXFH15N100Q-IXYS Nuevo y original
IXFH15N100Q3 MOSFET N-CH 1000V 15A TO-247
IXFH15N80P Nuevo y original
IXFH15N100P Darlington Transistors MOSFET 15 Amps 1000V 0.76 Rds
IXFH15N80 MOSFET 800V 15A
IXFH15N80Q MOSFET 800V 15A
IXFH15N100 MOSFET 15 Amps 1000V 0.7 Rds
IXFH15N100Q MOSFET 15 Amps 1000V 0.725 Rds
IXFH15N60 MOSFET 15 Amps 600V
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