SIE850DF-T1-GE3

Mfr. #:: SIE850DF-T1-GE3
Fabricante:: Vishay / Siliconix
Descripción:: MOSFET 30V 164A 104W 2.5mohm @ 10V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SIE850DF-T1-GE3 Ficha de datos
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Más información:: SIE850DF-T1-GE3 más información

Atributo del producto
Valor de atributo

Fabricante:: Vishay

Categoria de producto:: MOSFET

RoHS:: E

Tecnología:: Si

Estilo de montaje:: SMD / SMT

Paquete / Caja:: PolarPAK-10

Nombre comercial:: TrenchFET, PolarPAK

Embalaje:: Carrete

Altura:: 0.8 mm

Longitud:: 6.15 mm

Serie:: SIE

Ancho:: 5.16 mm

Marca:: Vishay / Siliconix

Tipo de producto:: MOSFET

Cantidad de paquete de fábrica:: 3000

Subcategoría:: MOSFET

Parte # Alias:: SIE850DF-GE3

Tags: SIE85, SIE8, SIE

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIE850DF-T1-GE3 Más información

N-Channel PolarPAK® Power MOSFETs: Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SIE850DF-T1-GE3 DISTI # 781-SIE850DF-GE3	Vishay Intertechnologies	MOSFET 30V 164A 104W 2.5mohm @ 10V RoHS: Compliant	0	3000:$1.7500

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SIE850DF-T1-GE3 OMO.#: OMO-SIE850DF-T1-GE3	MOSFET 30V 164A 104W 2.5mohm @ 10V
	Mfr.#: SIE850DF-T1-E3 OMO.#: OMO-SIE850DF-T1-E3	MOSFET 30V 164A 104W 2.5mohm @ 10V
	Mfr.#: SIE850DF-T1-E3 OMO.#: OMO-SIE850DF-T1-E3-317	RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
	Mfr.#: SIE850DF-T1-GE3 OMO.#: OMO-SIE850DF-T1-GE3-317	RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V

Disponibilidad

Valores:: Available
En orden:: 3500
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El precio actual de SIE850DF-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

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SIE850DF-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes