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SIE850DF-T1-GE3

SIE850DF-T1-GE3
Mfr. #:
SIE850DF-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIE850DF-T1-GE3 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
SIE850DF-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
Vishay / Siliconix
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
SIE850DF-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PolarPAK-10
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
5.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 50 C
Vgs-Puerta-Fuente-Voltaje
12 V
Id-corriente-de-drenaje-continua
35 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
2.5 mOhms
Polaridad del transistor
Canal N
Tags
SIE85, SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
Parte # Mfg. Descripción Valores Precio
SIE850DF-T1-GE3
DISTI # 781-SIE850DF-GE3		Vishay IntertechnologiesMOSFET 30V 164A 104W 2.5mohm @ 10V
RoHS: Compliant		0
  • 3000:$1.7500
Imagen Parte # Descripción
SIE850DF-T1-GE3

Mfr.#: SIE850DF-T1-GE3

OMO.#: OMO-SIE850DF-T1-GE3

 MOSFET 30V 164A 104W 2.5mohm @ 10V
SIE850DF-T1-E3

Mfr.#: SIE850DF-T1-E3

OMO.#: OMO-SIE850DF-T1-E3

 MOSFET 30V 164A 104W 2.5mohm @ 10V
SIE850DF-T1-E3

Mfr.#: SIE850DF-T1-E3

OMO.#: OMO-SIE850DF-T1-E3-317

 RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
SIE850DF-T1-GE3

Mfr.#: SIE850DF-T1-GE3

OMO.#: OMO-SIE850DF-T1-GE3-317

 RF Bipolar Transistors MOSFET 30V 164A 104W 2.5mohm @ 10V
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de SIE850DF-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,61 US$
2,61 US$
10
2,48 US$
24,79 US$
100
2,35 US$
234,90 US$
500
2,22 US$
1 109,25 US$
1000
2,09 US$
2 088,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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