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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI6473DQ-T1-E3 DISTI # SI6473DQ-T1-E3-ND | Vishay Siliconix | MOSFET P-CH 20V 6.2A 8-TSSOP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| SI6473DQ-T1-E3 DISTI # 70026253 | Vishay Siliconix | MOSFET,TSSOP8 20V P-CH 2.5V (GS) Rated RoHS: Not Compliant | 0 |
|
| SI6473DQ-T1-E3 DISTI # 781-SI6473DQ-E3 | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 RoHS: Compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI6475DQ-T1-GE3 OMO.#: OMO-SI6475DQ-T1-GE3 |
MOSFET 12V 10A 1.75W 11mohm @ 4.5V |
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Mfr.#: SI6473DQ-T1-E3 OMO.#: OMO-SI6473DQ-T1-E3 |
MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 |
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Mfr.#: SI6475DQ-T1-GE3 OMO.#: OMO-SI6475DQ-T1-GE3-317 |
RF Bipolar Transistors MOSFET 12V 10A 1.75W 11mohm @ 4.5V |
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Mfr.#: SI6473DQ OMO.#: OMO-SI6473DQ-1190 |
6200 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
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Mfr.#: SI6473DQ-T1-GE3 OMO.#: OMO-SI6473DQ-T1-GE3-VISHAY |
MOSFET P-CH 20V 6.2A 8-TSSOP |
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Mfr.#: SI6473DQ-TI OMO.#: OMO-SI6473DQ-TI-1190 |
Nuevo y original |
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Mfr.#: SI6475DQ OMO.#: OMO-SI6475DQ-1190 |
Nuevo y original |
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Mfr.#: SI6475DQ-T1-E3 OMO.#: OMO-SI6475DQ-T1-E3-1190 |
MOSFET, FULL REEL, Transistor Polarity:N and P Channel, Continuous Drain Current Id:-7.8A, Drain Source Voltage Vds:-12V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshol |
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Mfr.#: SI6473DQ-T1-E3 OMO.#: OMO-SI6473DQ-T1-E3-VISHAY |
MOSFET P-CH 20V 6.2A 8-TSSOP |