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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| SI6475DQ-T1-E3 DISTI # 65K1943 | Vishay Intertechnologies | MOSFET, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:-7.8A,Drain Source Voltage Vds:-12V,On Resistance Rds(on):0.011ohm,Rds(on) Test Voltage Vgs:-4.5V,Threshold Voltage Vgs:-450mV,No. of Pins:8PinsRoHS Compliant: Yes | 0 | |
| SI6475DQ-T1 DISTI # 781-SI6475DQ | Vishay Intertechnologies | MOSFET RECOMMENDED ALT 78-SIS407ADN-T1-GE3 RoHS: Not compliant | 0 |
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: SI6475DQ-T1-GE3 OMO.#: OMO-SI6475DQ-T1-GE3 |
MOSFET 12V 10A 1.75W 11mohm @ 4.5V |
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Mfr.#: SI6475DQ-T1-GE3 OMO.#: OMO-SI6475DQ-T1-GE3-317 |
RF Bipolar Transistors MOSFET 12V 10A 1.75W 11mohm @ 4.5V |
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Mfr.#: SI6475DQ OMO.#: OMO-SI6475DQ-1190 |
Nuevo y original |
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Mfr.#: SI6475DQ-T1-E3 OMO.#: OMO-SI6475DQ-T1-E3-1190 |
MOSFET, FULL REEL, Transistor Polarity:N and P Channel, Continuous Drain Current Id:-7.8A, Drain Source Voltage Vds:-12V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshol |