SI6475DQ-T1-GE3

Mfr. #:: SI6475DQ-T1-GE3
Fabricante:: Vishay / Siliconix
Descripción:: RF Bipolar Transistors MOSFET 12V 10A 1.75W 11mohm @ 4.5V
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: SI6475DQ-T1-GE3 Ficha de datos
Entrega:: DHL FedEx Ups TNT EMS
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Atributo del producto
Valor de atributo

Fabricante: Vishay / Siliconix

categoria de producto: Transistores - FET, MOSFET - Sencillo

Serie: SI6475DQ

embalaje: Carrete

Alias de parte: SI6475DQ-GE3

Unidad de peso: 0.005573 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: TSSOP-8

Tecnología: Si

Número de canales: 1 Channel

Configuración: Único

Tipo transistor: 1 P-Channel

Disipación de potencia Pd: 1.08 W

Temperatura máxima de funcionamiento: + 150 C

Temperatura mínima de funcionamiento: - 55 C

Vgs-Puerta-Fuente-Voltaje: 8 V

Id-corriente-de-drenaje-continua: 7.8 A

Vds-Drain-Source-Breakdown-Voltage: - 12 V

Resistencia a la fuente de desagüe de Rds: 11 mOhms

Polaridad del transistor: P-Channel

Tags: SI6475, SI647, SI64, SI6

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

Parte #	Mfg.	Descripción	Valores	Precio
SI6475DQ-T1-GE3 DISTI # 781-SI6475DQ-GE3	Vishay Intertechnologies	MOSFET 12V 10A 1.75W 11mohm @ 4.5V RoHS: Compliant	0	3000:$0.7700 6000:$0.7420 9000:$0.7130

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: SI6475DQ-T1-GE3 OMO.#: OMO-SI6475DQ-T1-GE3	MOSFET 12V 10A 1.75W 11mohm @ 4.5V
	Mfr.#: SI6475DQ-T1-GE3 OMO.#: OMO-SI6475DQ-T1-GE3-317	RF Bipolar Transistors MOSFET 12V 10A 1.75W 11mohm @ 4.5V
	Mfr.#: SI6475DQ OMO.#: OMO-SI6475DQ-1190	Nuevo y original
	Mfr.#: SI6475DQ-T1-E3 OMO.#: OMO-SI6475DQ-T1-E3-1190	MOSFET, FULL REEL, Transistor Polarity:N and P Channel, Continuous Drain Current Id:-7.8A, Drain Source Voltage Vds:-12V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshol

Disponibilidad

Valores:: Available
En orden:: 5000
Ingrese la cantidad:

El precio actual de SI6475DQ-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~1,07 US$~~; ~~1,07 US$~~

10: ~~1,02 US$~~; ~~10,16 US$~~

100: ~~0,96 US$~~; ~~96,26 US$~~

500: ~~0,91 US$~~; ~~454,55 US$~~

1000: ~~0,86 US$~~; ~~855,60 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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SI6475DQ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes