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HGT1S7N60A4DS

HGT1S7N60A4DS
Mfr. #:
HGT1S7N60A4DS
Fabricante:
ON Semiconductor
Descripción:
IGBT 600V 34A 125W TO263AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGT1S7N60A4DS Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
HGT1S7N60A4DS DatasheetHGT1S7N60A4DS Datasheet (P4-P6)HGT1S7N60A4DS Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGT1S7N60A4D, HGT1S7N60A, HGT1S7, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 34A 3-Pin (2+Tab) TO-263AB Rail
***inecomponents.com
600V,SMPS Series N-Channel IGBT wirth Parallel Hyperfast Diode
***ser
IGBTs 600V N-Ch IGBT SMPS Series HF
***et
PWR IGBT 7A ,600V,SMPS SERIES W/DIODE TO
***i-Key
IGBT SMPS N-CHAN 600V TO-263AB
Parte # Mfg. Descripción Valores Precio
HGT1S7N60A4DS
DISTI # HGT1S7N60A4DS-ND		ON SemiconductorIGBT 600V 34A 125W TO263AB
RoHS: Compliant
Min Qty: 400
Container: Tube		Limited Supply - Call
    HGT1S7N60A4DS
    DISTI # HGT1S7N60A4DS    		ON SemiconductorTRANS IGBT CHIP N-CH 600V 34A 3PIN TO-263AB - Bulk (Alt: HGT1S7N60A4DS)
    RoHS: Compliant
    Min Qty: 264
    Container: Bulk    		Americas - 0
    • 2640:$1.0900
    • 264:$1.1900
    • 528:$1.1900
    • 792:$1.1900
    • 1320:$1.1900
    HGT1S7N60A4DS9A
    DISTI # HGT1S7N60A4DS9A    		ON Semiconductor600V, SMPS Series N-channel Igbt Wirth Parallel Hyperfast Diode - Bulk (Alt: HGT1S7N60A4DS9A)
    RoHS: Not Compliant
    Min Qty: 463
    Container: Bulk    		Americas - 0
    • 4630:$0.6659
    • 2315:$0.6829
    • 1389:$0.6919
    • 926:$0.7009
    • 463:$0.7049
    HGT1S7N60A4DS
    DISTI # 512-HGT1S7N60A4DS    		ON SemiconductorMotor / Motion / Ignition Controllers & Drivers 600V N-Ch IGBT SMPS Series HF
    RoHS: Compliant    		0
      HGT1S7N60A4DSFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Compliant      		912
      • 1000:$1.2500
      • 500:$1.3200
      • 100:$1.3700
      • 25:$1.4300
      • 1:$1.5400
      HGT1S7N60A4DS9AFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
      RoHS: Not Compliant      		83073
      • 1000:$0.7100
      • 500:$0.7500
      • 100:$0.7800
      • 25:$0.8100
      • 1:$0.8700
      HGT1S7N60A4DS9AFairchild Semiconductor Corporation 
      RoHS: Compliant      		281600
        Imagen Parte # Descripción
        HGT1S7N60C3DS9A

        Mfr.#: HGT1S7N60C3DS9A

        OMO.#: OMO-HGT1S7N60C3DS9A

        		 IGBT Transistors 14a 600V N-Ch IGBT UFS Series
        HGT1S7N60A4DS

        Mfr.#: HGT1S7N60A4DS

        OMO.#: OMO-HGT1S7N60A4DS-ON-SEMICONDUCTOR

        		 IGBT 600V 34A 125W TO263AB
        HGT1S7N60A4DS9A

        Mfr.#: HGT1S7N60A4DS9A

        OMO.#: OMO-HGT1S7N60A4DS9A-1190

        		 Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
        HGT1S7N60A4S

        Mfr.#: HGT1S7N60A4S

        OMO.#: OMO-HGT1S7N60A4S-1190

        		 Nuevo y original
        HGT1S7N60A4S9A

        Mfr.#: HGT1S7N60A4S9A

        OMO.#: OMO-HGT1S7N60A4S9A-1190

        		 IGBT Transistors 600V N-Channel IGBT SMPS Series
        HGT1S7N60B3

        Mfr.#: HGT1S7N60B3

        OMO.#: OMO-HGT1S7N60B3-1190

        		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
        HGT1S7N60B3D

        Mfr.#: HGT1S7N60B3D

        OMO.#: OMO-HGT1S7N60B3D-1190

        		 Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
        HGT1S7N60B3DS9A

        Mfr.#: HGT1S7N60B3DS9A

        OMO.#: OMO-HGT1S7N60B3DS9A-1190

        		 IGBT Transistors 14A 600V UFS N-Ch
        HGT1S7N60B3S

        Mfr.#: HGT1S7N60B3S

        OMO.#: OMO-HGT1S7N60B3S-1190

        		 Nuevo y original
        HGT1S7N60C3DS9A

        Mfr.#: HGT1S7N60C3DS9A

        OMO.#: OMO-HGT1S7N60C3DS9A-ON-SEMICONDUCTOR

        		 IGBT 600V 14A 60W TO263AB
        Disponibilidad
        Valores:
        Available
        En orden:
        3500
        Ingrese la cantidad:
        El precio actual de HGT1S7N60A4DS es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
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        Precio unitario
        Ext. Precio
        1
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        10
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        100
        0,00 US$
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        500
        0,00 US$
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        1000
        0,00 US$
        0,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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