HGT1S7N60B3S

HGT1S7N60B3S
Mfr. #:
HGT1S7N60B3S
Fabricante:
Harris Semiconductor
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGT1S7N60B3S Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGT1S7N60B, HGT1S7, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
HGT1S7N60B3DSHarris Semiconductor14 A, 600 V, UFS N-CHANNEL IGBT WITH ANTI-PARALLEL HYPERFAST DIODE
RoHS: Not Compliant
1150
  • 1000:$1.0800
  • 500:$1.1300
  • 100:$1.1800
  • 25:$1.2300
  • 1:$1.3300
Imagen Parte # Descripción
HGT1S7N60C3DS9A

Mfr.#: HGT1S7N60C3DS9A

OMO.#: OMO-HGT1S7N60C3DS9A

IGBT Transistors 14a 600V N-Ch IGBT UFS Series
HGT1S7N60C3DS

Mfr.#: HGT1S7N60C3DS

OMO.#: OMO-HGT1S7N60C3DS

IGBT Transistors 7A 600V TF=275NS
HGT1S7N60A4

Mfr.#: HGT1S7N60A4

OMO.#: OMO-HGT1S7N60A4-1190

Nuevo y original
HGT1S7N60A40S

Mfr.#: HGT1S7N60A40S

OMO.#: OMO-HGT1S7N60A40S-1190

Nuevo y original
HGT1S7N60A4DS9A

Mfr.#: HGT1S7N60A4DS9A

OMO.#: OMO-HGT1S7N60A4DS9A-1190

Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S7N60A4S

Mfr.#: HGT1S7N60A4S

OMO.#: OMO-HGT1S7N60A4S-1190

Nuevo y original
HGT1S7N60B3

Mfr.#: HGT1S7N60B3

OMO.#: OMO-HGT1S7N60B3-1190

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S7N60B3D

Mfr.#: HGT1S7N60B3D

OMO.#: OMO-HGT1S7N60B3D-1190

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
HGT1S7N60B3DS

Mfr.#: HGT1S7N60B3DS

OMO.#: OMO-HGT1S7N60B3DS-1190

Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-263AB
HGT1S7N60C3DS

Mfr.#: HGT1S7N60C3DS

OMO.#: OMO-HGT1S7N60C3DS-ON-SEMICONDUCTOR

IGBT 600V 14A 60W TO263AB
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de HGT1S7N60B3S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Ext. Precio
1
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10
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100
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0,00 US$
500
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1000
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