HGT1S7N60A4DS9A

HGT1S7N60A4DS9A
Mfr. #:
HGT1S7N60A4DS9A
Fabricante:
Rochester Electronics, LLC
Descripción:
Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGT1S7N60A4DS9A Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
FSC
categoria de producto
Chips de IC
Tags
HGT1S7N60A4D, HGT1S7N60A, HGT1S7, HGT1S, HGT1, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
HGT1S7N60A4DS9AFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
RoHS: Not Compliant
83073
  • 1000:$0.7100
  • 500:$0.7500
  • 100:$0.7800
  • 25:$0.8100
  • 1:$0.8700
HGT1S7N60A4DS9AFairchild Semiconductor Corporation 
RoHS: Compliant
Americas - 281600
    HGT1S7N60A4DS9AFairchild Semiconductor CorporationINSTOCK800
      HGT1S7N60A4DS9AFairchild Semiconductor CorporationINSTOCK1107
        Imagen Parte # Descripción
        HGT1S7N60C3DS

        Mfr.#: HGT1S7N60C3DS

        OMO.#: OMO-HGT1S7N60C3DS

        IGBT Transistors 7A 600V TF=275NS
        HGT1S7N60A4

        Mfr.#: HGT1S7N60A4

        OMO.#: OMO-HGT1S7N60A4-1190

        Nuevo y original
        HGT1S7N60A4DS

        Mfr.#: HGT1S7N60A4DS

        OMO.#: OMO-HGT1S7N60A4DS-ON-SEMICONDUCTOR

        IGBT 600V 34A 125W TO263AB
        HGT1S7N60A4DS,G7N60A4D

        Mfr.#: HGT1S7N60A4DS,G7N60A4D

        OMO.#: OMO-HGT1S7N60A4DS-G7N60A4D-1190

        Nuevo y original
        HGT1S7N60A4DS9A

        Mfr.#: HGT1S7N60A4DS9A

        OMO.#: OMO-HGT1S7N60A4DS9A-1190

        Insulated Gate Bipolar Transistor, 34A I(C), 600V V(BR)CES, N-Channel, TO-263AB
        HGT1S7N60B3

        Mfr.#: HGT1S7N60B3

        OMO.#: OMO-HGT1S7N60B3-1190

        Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
        HGT1S7N60B3D

        Mfr.#: HGT1S7N60B3D

        OMO.#: OMO-HGT1S7N60B3D-1190

        Insulated Gate Bipolar Transistor, 14A I(C), 600V V(BR)CES, N-Channel, TO-262AA
        HGT1S7N60B3DS9A

        Mfr.#: HGT1S7N60B3DS9A

        OMO.#: OMO-HGT1S7N60B3DS9A-1190

        IGBT Transistors 14A 600V UFS N-Ch
        HGT1S7N60C3D

        Mfr.#: HGT1S7N60C3D

        OMO.#: OMO-HGT1S7N60C3D-1190

        IGBT Transistors Optocoupler Phototransisto
        HGT1S7N60C3DS

        Mfr.#: HGT1S7N60C3DS

        OMO.#: OMO-HGT1S7N60C3DS-ON-SEMICONDUCTOR

        IGBT 600V 14A 60W TO263AB
        Disponibilidad
        Valores:
        Available
        En orden:
        4000
        Ingrese la cantidad:
        El precio actual de HGT1S7N60A4DS9A es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,00 US$
        1,00 US$
        10
        0,95 US$
        9,49 US$
        100
        0,90 US$
        89,90 US$
        500
        0,85 US$
        424,50 US$
        1000
        0,80 US$
        799,10 US$
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