TGF2952

TGF2952
Mfr. #:
TGF2952
Fabricante:
Qorvo
Descripción:
RF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TGF2952 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
TGF2952 más información
Atributo del producto
Valor de atributo
Fabricante
TriQuint (Qorvo)
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Gofre
Alias ​​de parte
1111797
Estilo de montaje
SMD / SMT
Rango de temperatura de funcionamiento
- 65 C to + 150 C
Paquete-Estuche
Die
Tecnología
GaN SiC
Configuración
Único
Tipo transistor
HEMT
Ganar
20.4 dB
Potencia de salida
38.4 dBm
Disipación de potencia Pd
10.5 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 65
Frecuencia de operación
15 GHz
Id-corriente-de-drenaje-continua
480 mA
Vds-Drain-Source-Breakdown-Voltage
32 V
Polaridad del transistor
Canal N
Voltaje de puerta de drenaje máximo
100 V
Tags
TGF295, TGF29, TGF2, TGF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
TGF GaN on SiC Transistors
Qorvo TGF GaN on SiC Transistors for the Satellite, P to P, and Military communications along with Marine radar and Test and instrumentation. These are small footprint (dies) that handle high power (7W to 70W) and high frequency, up to 14GHz.
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
Parte # Mfg. Descripción Valores Precio
TGF2952
DISTI # 772-TGF2952
QorvoRF JFET Transistors DC-14GHz 5W 32V GaN P3dB @ 3GHz 38.6dBm
RoHS: Compliant
0
  • 50:$30.2800
  • 100:$26.1900
  • 250:$24.6200
1111797
DISTI # TGF2952
QorvoRF POWER TRANSISTOR
RoHS: Compliant
0
  • 1:$17.1900
Imagen Parte # Descripción
TGF2023-2-02

Mfr.#: TGF2023-2-02

OMO.#: OMO-TGF2023-2-02

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Mfr.#: TGF2936

OMO.#: OMO-TGF2936

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TGF2929-FL

Mfr.#: TGF2929-FL

OMO.#: OMO-TGF2929-FL

RF MOSFET Transistors DC-3.5GHz 100W 28V GaN
TGF2022-24

Mfr.#: TGF2022-24

OMO.#: OMO-TGF2022-24-318

RF JFET Transistors DC-20GHz 2.4mm Pwr pHEMT (0.35um)
TGF2021-04

Mfr.#: TGF2021-04

OMO.#: OMO-TGF2021-04-318

RF JFET Transistors DC-12GHz 4mm Pwr pHEMT (0.35um)
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Mfr.#: TGF2160

OMO.#: OMO-TGF2160-318

RF JFET Transistors DC-20GHz Gain 10.4dB PAE 63% DIE
TGF-154-CC-CC12VDC

Mfr.#: TGF-154-CC-CC12VDC

OMO.#: OMO-TGF-154-CC-CC12VDC-1190

Nuevo y original
TGF4240-SCC

Mfr.#: TGF4240-SCC

OMO.#: OMO-TGF4240-SCC-1152

RF JFET Transistors DC-12.0GHz 1.4 Watt HFET
TGF3162

Mfr.#: TGF3162

OMO.#: OMO-TGF3162-1190

ARBITRARY FUNCTION GENERATOR, 2CH/160MHZ
TGF10-07870787-039

Mfr.#: TGF10-07870787-039

OMO.#: OMO-TGF10-07870787-039-LEADER-TECH

Thermal Gap Filler/White Grey 1.0W/m-K
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de TGF2952 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
36,93 US$
36,93 US$
10
35,08 US$
350,84 US$
100
33,24 US$
3 323,70 US$
500
31,39 US$
15 695,25 US$
1000
29,54 US$
29 544,00 US$
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