SI4563DY-T1-GE3

SI4563DY-T1-GE3
Mfr. #:
SI4563DY-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET RECOMMENDED ALT 781-SI4564DY-T1-GE3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4563DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SI4563DY-T1-GE3 DatasheetSI4563DY-T1-GE3 Datasheet (P4-P6)SI4563DY-T1-GE3 Datasheet (P7-P9)SI4563DY-T1-GE3 Datasheet (P10-P12)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.75 mm
Longitud:
4.9 mm
Serie:
SI4
Ancho:
3.9 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
2500
Subcategoría:
MOSFET
Parte # Alias:
SI4563DY-GE3
Unidad de peso:
0.006596 oz
Tags
SI456, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N/P-CH 40V 8A/6.6A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:NPN & PNP; Operating Temperature Range:-55°C to +150°C; Package/Case:8-SOIC; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes
***ment14 APAC
NPN & PNP MOSFET, SOIC; Transistor Polar; NPN & PNP MOSFET, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:8A; Continuous Drain Current Id, P Channel:-6.6A; Drain Source Voltage Vds, N Channel:40V; Drain Source Voltage Vds, P Channel:-40V
Parte # Mfg. Descripción Valores Precio
SI4563DY-T1-GE3
DISTI # SI4563DY-T1-GE3-ND
Vishay SiliconixMOSFET N/P-CH 40V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Limited Supply - Call
    SI4563DY-T1-GE3
    DISTI # 781-SI4563DY-GE3
    Vishay IntertechnologiesMOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
    RoHS: Compliant
    0
      Imagen Parte # Descripción
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3

      MOSFET RECOMMENDED ALT 781-SI4564DY-T1-GE3
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3-VISHAY

      RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
      SI4563DY-T1-E3

      Mfr.#: SI4563DY-T1-E3

      OMO.#: OMO-SI4563DY-T1-E3-VISHAY

      MOSFET N/P-CH 40V 8A 8-SOIC
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de SI4563DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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