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SI4563DY-T1-GE3

SI4563DY-T1-GE3
Mfr. #:
SI4563DY-T1-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4563DY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Tape & Reel (TR)
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Paquete de dispositivo de proveedor
8-SO
Tipo FET
Canal N y P
Potencia máxima
3.25W
Drenaje-a-fuente-voltaje-Vdss
40V
Entrada-Capacitancia-Ciss-Vds
2390pF @ 20V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
8A
Rds-On-Max-Id-Vgs
16 mOhm @ 5A, 10V
Vgs-th-Max-Id
2V @ 250μA
Puerta-Carga-Qg-Vgs
85nC @ 10V
Tags
SI456, SI45, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N/P-CH 40V 8A/6.6A 8-Pin SOIC N T/R
***ark
Transistor; Transistor Polarity:NPN & PNP; Operating Temperature Range:-55°C to +150°C; Package/Case:8-SOIC; Termination Type:SMD; Transistor Type:MOSFET ;RoHS Compliant: Yes
***ment14 APAC
NPN & PNP MOSFET, SOIC; Transistor Polar; NPN & PNP MOSFET, SOIC; Transistor Polarity:N and P Channel; Continuous Drain Current Id, N Channel:8A; Continuous Drain Current Id, P Channel:-6.6A; Drain Source Voltage Vds, N Channel:40V; Drain Source Voltage Vds, P Channel:-40V
Parte # Mfg. Descripción Valores Precio
SI4563DY-T1-GE3
DISTI # SI4563DY-T1-GE3-ND		Vishay SiliconixMOSFET N/P-CH 40V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    SI4563DY-T1-GE3
    DISTI # 781-SI4563DY-GE3    		Vishay IntertechnologiesMOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
    RoHS: Compliant    		0
      Imagen Parte # Descripción
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3

      		 MOSFET RECOMMENDED ALT 781-SI4564DY-T1-GE3
      SI4563DY-T1-GE3

      Mfr.#: SI4563DY-T1-GE3

      OMO.#: OMO-SI4563DY-T1-GE3-VISHAY

      		 RF Bipolar Transistors MOSFET 40V 8.0A 3.25W 16/25mohm @ 10V
      SI4563DY-T1-E3

      Mfr.#: SI4563DY-T1-E3

      OMO.#: OMO-SI4563DY-T1-E3-VISHAY

      		 MOSFET N/P-CH 40V 8A 8-SOIC
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de SI4563DY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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      Ext. Precio
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      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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