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GS66506T-E01-MR

GS66506T-E01-MR
Mfr. #:
GS66506T-E01-MR
Fabricante:
GaN Systems
Descripción:
MOSFET 650V 22A E-Mode GaN
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS66506T-E01-MR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS66506T-E01-MR más información
Atributo del producto
Valor de atributo
Fabricante
Sistemas de GaN
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Estilo de montaje
SMD / SMT
Tecnología
GaN
Vgs-Puerta-Fuente-Voltaje
10 V
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
1.6 V
Resistencia a la fuente de desagüe de Rds
73 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
4.9 nC
Modo de canal
Mejora
Tags
GS6650, GS665, GS66, GS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***hardson RFPD
GAN POWER TRANSISTOR
GS6650x 650V GaN Transistors
GaN Systems GS6650x 650V GaN Transistors are Enhancement Mode GaN-on-Silicon power devices. The properties of GaN allow for high current, high voltage breakdown, and high switching frequency. GaN Systems implements patented Island Technology® cell layout for high-current die performance and yield. GaNPX™ packaging enables low inductance and low thermal resistance in a small package. GS6650x Gan Transistors are bottom-side cooled, offering very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching.
Parte # Mfg. Descripción Valores Precio
GS66506T-E01-MR
DISTI # 499-GS66506T-E01-MR		GaN SystemsMOSFET 650V 22A E-Mode GaN
RoHS: Compliant		0
  • 1:$17.1700
  • 10:$13.8500
  • 25:$13.2000
  • 250:$12.2700
GS66506T-E01-MR
DISTI # GS66506T-E01-MR		GaN SystemsGAN POWER TRANSISTOR
RoHS: Compliant		0
  • 250:$11.7800
Imagen Parte # Descripción
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR

 MOSFET 650V 22A E-Mode GaN
GS66506T-E01-MR

Mfr.#: GS66506T-E01-MR

OMO.#: OMO-GS66506T-E01-MR-1190

 MOSFET 650V 22A E-Mode GaN
Disponibilidad
Valores:
Available
En orden:
3500
Ingrese la cantidad:
El precio actual de GS66506T-E01-MR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
17,67 US$
17,67 US$
10
16,79 US$
167,86 US$
100
15,90 US$
1 590,30 US$
500
15,02 US$
7 509,75 US$
1000
14,14 US$
14 136,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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