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HGTP10N120BN

HGTP10N120BN
Mfr. #:
HGTP10N120BN
Fabricante:
ON Semiconductor
Descripción:
IGBT 1200V 35A 298W TO220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTP10N120BN Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
IGBTs - Single
Serie
-
embalaje
Tubo
Paquete-Estuche
TO-220-3
Tipo de entrada
Estándar
Tipo de montaje
A través del orificio
Paquete de dispositivo de proveedor
TO-220AB
Potencia máxima
298W
Tiempo de recuperación inverso trr
-
Colector-corriente-Ic-Max
35A
Voltaje-Colector-Emisor-Ruptura-Máx.
1200V
Tipo IGBT
NPT
Colector de corriente pulsado Icm
80A
Vce-en-Max-Vge-Ic
2.7V @ 15V, 10A
Energía de conmutación
320μJ (on), 800μJ (off)
Gate-Charge
100nC
Td-encendido-apagado-25 ° C
23ns/165ns
Condición de prueba
960V, 10A, 10 Ohm, 15V
Tags
HGTP10N1, HGTP10, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N=-CH 1200V 35A 298000mW 3-Pin(3+Tab) TO-220AB Rail
***p One Stop Global
Trans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail
***ure Electronics
N-Channel 1200 V 35 A Flange Mount IGBT - TO-220AB
***ark
RAIL / PWR IGBT 35A 1200V NPT N-CHANNEL TO-220AB
***et
PWR IGBT 35A 1200V NPT N-CHANNEL TO-220AB
***i-Key
IGBT NPT N-CH 1200V 35A TO-220AB
*** Source Electronics
IGBT 1200V 35A 298W TO220AB
***ser
IGBTs 35A, 1200V, N-Ch
***Semiconductor
1200V, NPT IGBT
***rchild Semiconductor
HGTP10N120BN is based on Non- Punch Through(NPT) IGBT designs. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter, motor control and power supplies.
Parte # Mfg. Descripción Valores Precio
HGTP10N120BN
DISTI # HGTP10N120BNFS-ND		ON SemiconductorIGBT 1200V 35A 298W TO220AB
RoHS: Compliant
Min Qty: 800
Container: Tube		Limited Supply - Call
  • 800:$1.7840
HGTP10N120BN
DISTI # HGTP10N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: HGTP10N120BN)
RoHS: Compliant
Min Qty: 800
Container: Tube		Americas - 0
  • 800:$1.1900
  • 1600:$1.1900
  • 3200:$1.0900
  • 4800:$1.0900
  • 8000:$1.0900
HGTP10N120BN
DISTI # HGTP10N120BN		ON SemiconductorTrans IGBT Chip N-CH 1.2KV 35A 3-Pin(3+Tab) TO-220AB Rail (Alt: HGTP10N120BN)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.4900
  • 10:€1.3900
  • 25:€1.1900
  • 50:€1.1900
  • 100:€1.0900
  • 500:€1.0900
  • 1000:€1.0900
HGTP10N120BN
DISTI # 98B1940		ON SemiconductorTRANSISTOR,IGBT,N-CHAN,1.2kV V(BR)CES,17A I(C),TO-220AB RoHS Compliant: Yes0
  • 1:$3.1700
  • 10:$2.5500
  • 100:$2.0500
  • 500:$1.8000
  • 1000:$1.4900
  • 2500:$1.3700
  • 10000:$1.3000
HGTP10N120BNFairchild Semiconductor CorporationInsulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel
RoHS: Compliant		1696
  • 1000:$1.9500
  • 500:$2.0500
  • 100:$2.1300
  • 25:$2.2300
  • 1:$2.4000
HGTP10N120BNFSFairchild Semiconductor Corporation 
RoHS: Not Compliant		257
    HGTP10N120BN
    DISTI # 512-HGTP10N120BN    		ON SemiconductorIGBT Transistors 35A 1200V N-Ch
    RoHS: Compliant    		0
      HGTP10N120BNON SemiconductorINSTOCK403
        Imagen Parte # Descripción
        HGTP10N120BN G10N120BN

        Mfr.#: HGTP10N120BN G10N120BN

        OMO.#: OMO-HGTP10N120BN-G10N120BN-1190

        		 Nuevo y original
        HGTP10N120BN,10N120BN,

        Mfr.#: HGTP10N120BN,10N120BN,

        OMO.#: OMO-HGTP10N120BN-10N120BN--1190

        		 Nuevo y original
        HGTP10N40C1D

        Mfr.#: HGTP10N40C1D

        OMO.#: OMO-HGTP10N40C1D-1190

        		 Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N40E1

        Mfr.#: HGTP10N40E1

        OMO.#: OMO-HGTP10N40E1-1190

        		 Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N40E1D

        Mfr.#: HGTP10N40E1D

        OMO.#: OMO-HGTP10N40E1D-1190

        		 Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N40F1D

        Mfr.#: HGTP10N40F1D

        OMO.#: OMO-HGTP10N40F1D-1190

        		 Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
        HGTP10N50C1D

        Mfr.#: HGTP10N50C1D

        OMO.#: OMO-HGTP10N50C1D-1190

        		 Nuevo y original
        HGTP10N50E1

        Mfr.#: HGTP10N50E1

        OMO.#: OMO-HGTP10N50E1-1190

        		 Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB
        HGTP10N50E1D

        Mfr.#: HGTP10N50E1D

        OMO.#: OMO-HGTP10N50E1D-1190

        		 Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
        HGTP10N50F1D

        Mfr.#: HGTP10N50F1D

        OMO.#: OMO-HGTP10N50F1D-1190

        		 Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        4500
        Ingrese la cantidad:
        El precio actual de HGTP10N120BN es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,64 US$
        1,64 US$
        10
        1,55 US$
        15,53 US$
        100
        1,47 US$
        147,15 US$
        500
        1,39 US$
        694,90 US$
        1000
        1,31 US$
        1 308,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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