HGTP10N40E1

HGTP10N40E1
Mfr. #:
HGTP10N40E1
Fabricante:
Rochester Electronics, LLC
Descripción:
Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTP10N40E1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTP10N4, HGTP10, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ponent Stockers USA
10 A 400 V N-CHANNEL IGBT TO-220AB
***i-Key
10A, 400V, N-CHANNEL IGBT
Parte # Mfg. Descripción Valores Precio
HGTP10N40E1Harris SemiconductorInsulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
RoHS: Not Compliant
267
  • 1000:$1.0700
  • 500:$1.1200
  • 100:$1.1700
  • 25:$1.2200
  • 1:$1.3100
HGTP10N40E1DHarris SemiconductorInsulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
RoHS: Not Compliant
162
  • 1000:$1.4300
  • 500:$1.5100
  • 100:$1.5700
  • 25:$1.6400
  • 1:$1.7700
Imagen Parte # Descripción
HGTP10N40C1

Mfr.#: HGTP10N40C1

OMO.#: OMO-HGTP10N40C1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40C1D

Mfr.#: HGTP10N40C1D

OMO.#: OMO-HGTP10N40C1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40E1

Mfr.#: HGTP10N40E1

OMO.#: OMO-HGTP10N40E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40F1D

Mfr.#: HGTP10N40F1D

OMO.#: OMO-HGTP10N40F1D-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N50E1

Mfr.#: HGTP10N50E1

OMO.#: OMO-HGTP10N50E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP12N60C3

Mfr.#: HGTP12N60C3

OMO.#: OMO-HGTP12N60C3-ON-SEMICONDUCTOR

IGBT 600V 24A 104W TO220AB
HGTP14N36G3VL

Mfr.#: HGTP14N36G3VL

OMO.#: OMO-HGTP14N36G3VL-1190

Trans IGBT Chip N-CH 390V 18A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: HGTP14N36G3VL)
HGTP14N45G3VLR4432

Mfr.#: HGTP14N45G3VLR4432

OMO.#: OMO-HGTP14N45G3VLR4432-1190

Nuevo y original
HGTP15N120BND

Mfr.#: HGTP15N120BND

OMO.#: OMO-HGTP15N120BND-1190

Nuevo y original
HGTP15N60C1D

Mfr.#: HGTP15N60C1D

OMO.#: OMO-HGTP15N60C1D-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de HGTP10N40E1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
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1
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0,00 US$
10
0,00 US$
0,00 US$
100
0,00 US$
0,00 US$
500
0,00 US$
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1000
0,00 US$
0,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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