HGTP10N50F1D

HGTP10N50F1D
Mfr. #:
HGTP10N50F1D
Fabricante:
Harris Semiconductor
Descripción:
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
HGTP10N50F1D Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
HGTP10N5, HGTP10, HGTP1, HGTP, HGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***pNet
Trans IGBT Chip N-CH 500V 12A 3-P TO-220AB
Parte # Mfg. Descripción Valores Precio
HGTP10N50E1DHarris Semiconductor17.5A, 500V, N-CHANNEL IGBT
RoHS: Not Compliant
3800
  • 1000:$2.8700
  • 500:$3.0200
  • 100:$3.1400
  • 25:$3.2800
  • 1:$3.5300
Imagen Parte # Descripción
HGTP10N120BN 10N120BN

Mfr.#: HGTP10N120BN 10N120BN

OMO.#: OMO-HGTP10N120BN-10N120BN-1190

Nuevo y original
HGTP10N120BN,10N120BN,

Mfr.#: HGTP10N120BN,10N120BN,

OMO.#: OMO-HGTP10N120BN-10N120BN--1190

Nuevo y original
HGTP10N40C1

Mfr.#: HGTP10N40C1

OMO.#: OMO-HGTP10N40C1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40C1D

Mfr.#: HGTP10N40C1D

OMO.#: OMO-HGTP10N40C1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40E1

Mfr.#: HGTP10N40E1

OMO.#: OMO-HGTP10N40E1-1190

Insulated Gate Bipolar Transistor, 10A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40E1D

Mfr.#: HGTP10N40E1D

OMO.#: OMO-HGTP10N40E1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N40F1D

Mfr.#: HGTP10N40F1D

OMO.#: OMO-HGTP10N40F1D-1190

Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-220AB
HGTP10N50C1

Mfr.#: HGTP10N50C1

OMO.#: OMO-HGTP10N50C1-1190

Nuevo y original
HGTP10N50E1D

Mfr.#: HGTP10N50E1D

OMO.#: OMO-HGTP10N50E1D-1190

Insulated Gate Bipolar Transistor, 17.5A I(C), 500V V(BR)CES, N-Channel, TO-220AB
HGTP10N50F1D

Mfr.#: HGTP10N50F1D

OMO.#: OMO-HGTP10N50F1D-1190

Nuevo y original
Disponibilidad
Valores:
Available
En orden:
5000
Ingrese la cantidad:
El precio actual de HGTP10N50F1D es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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10
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100
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0,00 US$
500
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1000
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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