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IKW50N60DTPXKSA1

IKW50N60DTPXKSA1
Mfr. #:
IKW50N60DTPXKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKW50N60DTPXKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IKW50N60DTPXKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
600 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
80 A
Pd - Disipación de energía:
319.2 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
600V TRENCHSTOP
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
100 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKW50N60DTP SP001379678
Unidad de peso:
0.213951 oz
Tags
IKW50N60D, IKW50N60, IKW50N6, IKW50N, IKW5, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IKW50N60DTP Series 600 V 80 A Through Hole Trench Field Stop IGBT - PG-TO247-3
***ineon SCT
600 V, 50 A IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, SINGLE, 600V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 319.2W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pin
***ineon
The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior. | Summary of Features: Lower total switching losses (E ts) i.e. better efficiency IGBT 7% lower E ts for switching speed of 8kHz 11% lower E ts for switching speed of 15kHz; Low speed dV/dt switching (<5V/ns); Low EMI; Improved cell design for higher reliability | Target Applications: Motor control; Air conditioning compressors; HVAC motor drives; UPS; Solar power converters
600V & 1200V TRENCHSTOP IGBTs
Infineon 600V & 1200V TRENCHSTOP™ IGBTs combines trench top-cell and field stop concept leads to significantly improve static and dynamic performance. A combination of IGBTs with a soft recovery Emitter Controlled-Diode further minimizes turn-on losses. A compromise between switching and conduction losses allows for high efficiency.Learn More
Light Electric Vehicles (LEV)
Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.
Parte # Mfg. Descripción Valores Precio
IKW50N60DTPXKSA1
DISTI # V99:2348_14664357		Infineon Technologies AGTrans IGBT Chip N-CH 600V 100A Tube344
  • 500:$3.1140
  • 250:$3.6090
  • 100:$3.7310
  • 10:$4.3880
  • 1:$5.6606
IKW50N60DTPXKSA1
DISTI # IKW50N60DTPXKSA1-ND		Infineon Technologies AGIGBT 600V 80A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		216In Stock
  • 2640:$2.7444
  • 720:$3.4168
  • 240:$4.0137
  • 25:$4.6312
  • 10:$4.8990
  • 1:$5.4500
IKW50N60DTPXKSA1
DISTI # 27074052		Infineon Technologies AGTrans IGBT Chip N-CH 600V 100A Tube420
  • 5:$2.3137
IKW50N60DTPXKSA1
DISTI # 32341519		Infineon Technologies AGTrans IGBT Chip N-CH 600V 100A Tube344
  • 3:$5.6606
IKW50N60DTPXKSA1
DISTI # IKW50N60DTP		Infineon Technologies AGTrans IGBT Chip N-CH 600V 80A 3 TO-247 Tube (Alt: IKW50N60DTP)
RoHS: Compliant
Min Qty: 240
Container: Tube		Asia - 1200
  • 480:$0.7630
  • 240:$0.8175
IKW50N60DTPXKSA1
DISTI # IKW50N60DTPXKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 600V 80A 3 TO-247 Tube - Rail/Tube (Alt: IKW50N60DTPXKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.3900
  • 1440:$2.4900
  • 960:$2.5900
  • 480:$2.6900
  • 240:$2.7900
IKW50N60DTPXKSA1
DISTI # SP001379678		Infineon Technologies AGTrans IGBT Chip N-CH 600V 80A 3 TO-247 Tube (Alt: SP001379678)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.9900
  • 500:€2.0900
  • 100:€2.1900
  • 50:€2.2900
  • 25:€2.3900
  • 10:€2.4900
  • 1:€2.6900
IKW50N60DTPXKSA1
DISTI # 34AC1634		Infineon Technologies AGIGBT, SINGLE, 600V, 80A, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):1.6V,Power Dissipation Pd:319.2W,Collector Emitter Voltage V(br)ceo:600V,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes184
  • 500:$3.2800
  • 250:$3.6600
  • 100:$3.8600
  • 50:$4.0600
  • 25:$4.2600
  • 10:$4.4500
  • 1:$5.2300
IKW50N60DTPXKSA1
DISTI # 726-IKW50N60DTPXKSA1		Infineon Technologies AGIGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off energy with outstanding robustness and excellent EMI behavior.
RoHS: Compliant		668
  • 1:$5.1800
  • 10:$4.4100
  • 100:$3.8200
  • 250:$3.6200
  • 500:$3.2500
IKW50N60DTPXKSA1
DISTI # IKW50N60DTP		Infineon Technologies AGTransistor: IGBT,600V,61A,159.6W,TO247-3209
  • 30:$3.2300
  • 10:$3.5900
  • 3:$4.0700
  • 1:$4.4100
IKW50N60DTPXKSA1
DISTI # 2781034		Infineon Technologies AGIGBT, SINGLE, 600V, 80A, TO-247193
  • 500:£2.4800
  • 250:£2.7600
  • 100:£2.9200
  • 10:£3.3600
  • 1:£4.3800
IKW50N60DTPXKSA1
DISTI # 2781034		Infineon Technologies AGIGBT, SINGLE, 600V, 80A, TO-247
RoHS: Compliant		184
  • 1000:$3.7000
  • 500:$3.7700
  • 250:$3.9800
  • 100:$4.2100
  • 10:$4.7600
  • 1:$5.0900
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Disponibilidad
Valores:
668
En orden:
2651
Ingrese la cantidad:
El precio actual de IKW50N60DTPXKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
5,18 US$
5,18 US$
10
4,41 US$
44,10 US$
100
3,82 US$
382,00 US$
250
3,62 US$
905,00 US$
500
3,25 US$
1 625,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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