IKW50N60D

IKW50N60DTPXKSA1 vs IKW50N60DT vs IKW50N60DTP

 
PartNumberIKW50N60DTPXKSA1IKW50N60DTIKW50N60DTP
DescriptionIGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off enerIGBT 600V 50A 1,6V TO247-3
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.6 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C80 A--
Pd Power Dissipation319.2 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
Series600V TRENCHSTOP-TrenchStop
PackagingTube-*
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIKW50N60DTP SP001379678--
Unit Weight0.213951 oz--
Package Case--*
Input Type--Standard
Mounting Type--*
Supplier Device Package--*
Power Max--319.2W
Reverse Recovery Time trr--115ns
Current Collector Ic Max--80A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--150A
Vce on Max Vge Ic--1.8V @ 15V, 50A
Switching Energy--1.53mJ (On), 850μJ (Off)
Gate Charge--249nC
Td on off 25°C--20ns/215ns
Test Condition--400V, 50A, 7 Ohm, 15V
Fabricante Parte # Descripción RFQ
Infineon Technologies
Infineon Technologies
IKW50N60DTPXKSA1 IGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off ener
IKW50N60DTPXKSA1 IGBT 600V 80A TO247-3
IKW50N60DT Nuevo y original
IKW50N60DTP IGBT 600V 50A 1,6V TO247-3
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