IKW50N60DTPXKSA1 vs IKW50N60DT vs IKW50N60DTP

 
PartNumberIKW50N60DTPXKSA1IKW50N60DTIKW50N60DTP
DescriptionIGBT Transistors The new 600V TRENCHSTOP Performance has been developed based on 600V TRENCHSTOP IGBT technology. The new IGBT series combines the best trade-off between conduction and switch-off enerIGBT 600V 50A 1,6V TO247-3
ManufacturerInfineon-Infineon Technologies
Product CategoryIGBT Transistors-IGBTs - Single
RoHSY--
TechnologySi--
Package / CaseTO-247-3--
Mounting StyleThrough Hole--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max600 V--
Collector Emitter Saturation Voltage1.6 V--
Maximum Gate Emitter Voltage20 V--
Continuous Collector Current at 25 C80 A--
Pd Power Dissipation319.2 W--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 175 C--
Series600V TRENCHSTOP-TrenchStop
PackagingTube-*
BrandInfineon Technologies--
Gate Emitter Leakage Current100 nA--
Product TypeIGBT Transistors--
Factory Pack Quantity240--
SubcategoryIGBTs--
TradenameTRENCHSTOP--
Part # AliasesIKW50N60DTP SP001379678--
Unit Weight0.213951 oz--
Package Case--*
Input Type--Standard
Mounting Type--*
Supplier Device Package--*
Power Max--319.2W
Reverse Recovery Time trr--115ns
Current Collector Ic Max--80A
Voltage Collector Emitter Breakdown Max--600V
IGBT Type--Trench Field Stop
Current Collector Pulsed Icm--150A
Vce on Max Vge Ic--1.8V @ 15V, 50A
Switching Energy--1.53mJ (On), 850μJ (Off)
Gate Charge--249nC
Td on off 25°C--20ns/215ns
Test Condition--400V, 50A, 7 Ohm, 15V
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