OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IXFB210N30P3

IXFB210N30P3
Mfr. #:
IXFB210N30P3
Fabricante:
Littelfuse
Descripción:
IGBT Transistors MOSFET N-Channel: Power MOSFET w/Fast Diode
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFB210N30P3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFB210N30P3 más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IXFB210N30
embalaje
Tubo
Unidad de peso
0.056438 oz
Estilo de montaje
A través del orificio
Nombre comercial
Polar3 HiPerFET
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Disipación de potencia Pd
1.89 kW
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
13 ns
Hora de levantarse
25 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
210 A
Vds-Drain-Source-Breakdown-Voltage
300 V
Vgs-th-Gate-Source-Threshold-Voltage
5 V
Resistencia a la fuente de desagüe de Rds
14.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
94 ns
Tiempo de retardo de encendido típico
46 ns
Qg-Gate-Charge
268 nC
Transconductancia directa-Mín.
60 S
Modo de canal
Mejora
Tags
IXFB, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET TRANSISTOR, N CHANNEL, 210 A, 300 V, 0.0145 OHM, 10 V, 5 V ROHS COMPLIANT: YES
***Components
In a Tube of 25, N-Channel MOSFET, 210 A, 300 V, 3-Pin PLUS264 IXYS IXFB210N30P3
***ical
Trans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264
***ure Electronics
300V, 210A, 14.5mOhm, N-Channel, PLUS264, Polar3 HiPerFET
***i-Key
MOSFET N-CH 300V 210A PLUS264
***p One Stop Global
POLAR3 HIPERFET POWER MOSFET
***ment14 APAC
Prices include import duty and tax. MOSFET, N CH, 300V, 210A, TO-264; Transistor Polarity:N Channel; Continuous Drain Current Id:210A; Drain Source Voltage Vds:300V; On Resistance Rds(on):0.0145ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:1.89kW; Transistor Case Style:TO-264; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (12-Jan-2017)
***nell
MOSFET, CANALE N, 300V, 210A, TO-264; Polarità Transistor:Canale N; Corrente Continua di Drain Id:210A; Tensione Drain Source Vds:300V; Resistenza di Attivazione Rds(on):0.0145ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:1.89kW; Modello Case Transistor:TO-264; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (12-Jan-2017)
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Parte # Mfg. Descripción Valores Precio
IXFB210N30P3
DISTI # V99:2348_15877078		IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 2643
  • 500:$14.2600
  • 250:$14.3400
  • 100:$15.7800
  • 50:$16.4200
  • 25:$17.3400
  • 10:$19.4200
  • 5:$19.9400
  • 1:$20.9800
IXFB210N30P3
DISTI # V36:1790_15877078		IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 2640
    IXFB210N30P3
    DISTI # IXFB210N30P3-ND    		IXYS CorporationMOSFET N-CH 300V 210A PLUS264
    RoHS: Compliant
    Min Qty: 1
    Container: Tube    		34In Stock
    • 500:$14.7420
    • 100:$16.6374
    • 25:$17.9012
    • 10:$19.4810
    • 1:$21.0600
    IXFB210N30P3
    DISTI # 32748824    		IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 264100
    • 100:$16.4710
    • 25:$17.7222
    • 1:$20.8494
    IXFB210N30P3
    DISTI # 30535702    		IXYS CorporationTrans MOSFET N-CH 300V 210A 3-Pin(3+Tab) PLUS 2643
    • 500:$14.2600
    • 250:$14.3400
    • 100:$15.7800
    • 50:$16.4200
    • 25:$17.3400
    • 10:$19.4200
    • 5:$19.9400
    • 1:$20.9800
    IXFB210N30P3
    DISTI # 68X2857    		IXYS CorporationMOSFET Transistor, N Channel, 210 A, 300 V, 0.0145 ohm, 10 V, 5 V RoHS Compliant: Yes95
    • 250:$15.4200
    • 100:$16.8000
    • 50:$17.3100
    • 25:$18.0800
    • 10:$19.6700
    • 5:$20.2100
    • 1:$21.2700
    IXFB210N30P3
    DISTI # 747-IXFB210N30P3    		IXYS CorporationMOSFET N-Channel: Power MOSFET w/Fast Diode
    RoHS: Compliant    		411
    • 1:$21.0600
    • 5:$20.0100
    • 10:$19.4800
    • 25:$17.9000
    • 50:$17.1400
    • 100:$16.6300
    • 250:$15.2700
    • 500:$14.5300
    IXFB210N30P3
    DISTI # 8024357    		IXYS CorporationMOSFET 300V 210A POLAR3 HIPERFET PLUS264, EA5
    • 13:£16.8700
    • 1:£18.2900
    IXFB210N30P3
    DISTI # 8024357P    		IXYS CorporationMOSFET 300V 210A POLAR3 HIPERFET PLUS264, TU44
    • 13:£16.8700
    IXFB210N30P3
    DISTI # IXFB210N30P3    		IXYS CorporationTransistor: N-MOSFET,Polar3™,unipolar,300V,210A,1890W,250ns62
    • 1:$21.7700
    • 5:$19.6300
    • 25:$17.3700
    IXFB210N30P3
    DISTI # 2429705    		IXYS CorporationMOSFET, N CH, 300V, 210A, TO-264
    RoHS: Compliant    		95
    • 100:$25.2100
    • 25:$27.1300
    • 1:$31.9000
    IXFB210N30P3
    DISTI # 2429705    		IXYS CorporationMOSFET, N CH, 300V, 210A, TO-264102
    • 100:£13.2200
    • 50:£13.8700
    • 10:£14.2300
    • 5:£16.1900
    • 1:£16.7300
    Imagen Parte # Descripción
    IXFB210N30P3

    Mfr.#: IXFB210N30P3

    OMO.#: OMO-IXFB210N30P3

    		 MOSFET N-Channel: Power MOSFET w/Fast Diode
    IXFB210N20P

    Mfr.#: IXFB210N20P

    OMO.#: OMO-IXFB210N20P

    		 MOSFET 210 Amps 200V 0.0105 Rds
    IXFB210N30P3

    Mfr.#: IXFB210N30P3

    OMO.#: OMO-IXFB210N30P3-IXYS-CORPORATION

    		 IGBT Transistors MOSFET N-Channel: Power MOSFET w/Fast Diode
    IXFB210N20P

    Mfr.#: IXFB210N20P

    OMO.#: OMO-IXFB210N20P-IXYS-CORPORATION

    		 MOSFET 210 Amps 200V 0.0105 Rds
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IXFB210N30P3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    21,39 US$
    21,39 US$
    10
    20,32 US$
    203,20 US$
    100
    19,25 US$
    1 925,10 US$
    500
    18,18 US$
    9 090,75 US$
    1000
    17,11 US$
    17 112,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
    Empezar con
    Nuevos productos
    More Newest Products
    Top