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IAUT165N08S5N029ATMA2

IAUT165N08S5N029ATMA2
Mfr. #:
IAUT165N08S5N029ATMA2
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFET_(75V,120V(
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IAUT165N08S5N029ATMA2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IAUT165N08S5N029ATMA2 DatasheetIAUT165N08S5N029ATMA2 Datasheet (P4-P6)IAUT165N08S5N029ATMA2 Datasheet (P7-P9)
ECAD Model:
Más información:
IAUT165N08S5N029ATMA2 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSOF-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
80 V
Id - Corriente de drenaje continua:
165 A
Rds On - Resistencia de la fuente de drenaje:
2.9 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
90 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
167 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Carrete
Marca:
Infineon Technologies
Otoño:
29 ns
Sensible a la humedad:
Yes
Tipo de producto:
MOSFET
Hora de levantarse:
9 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
23 ns
Tiempo típico de retardo de encendido:
13 ns
Parte # Alias:
IAUT165N08S5N029 SP001585162
Tags
IAUT1, IAUT, IAU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
80V, N-Ch, 2.9 mΩ max, Automotive MOSFET, TOLL, OptiMOS™-5, PG-HSOF-8, RoHS
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested
***ark
Mosfet, Aec-Q101, N-Ch, 80V, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:165A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0024Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Parte # Mfg. Descripción Valores Precio
IAUT165N08S5N029ATMA2
DISTI # V72:2272_17076701		Infineon Technologies AGOptiMOS 5 Power Transistor1897
  • 1000:$1.7370
  • 500:$2.0820
  • 250:$2.3700
  • 100:$2.4240
  • 25:$2.5700
  • 10:$2.8550
  • 1:$3.7202
IAUT165N08S5N029ATMA2
DISTI # IAUT165N08S5N029ATMA2CT-ND		Infineon Technologies AG80V 165A 2.9MOHM TOLL
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1987In Stock
  • 1000:$1.9536
  • 500:$2.3165
  • 100:$2.7211
  • 10:$3.3210
  • 1:$3.7000
IAUT165N08S5N029ATMA2
DISTI # IAUT165N08S5N029ATMA2DKR-ND		Infineon Technologies AG80V 165A 2.9MOHM TOLL
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1987In Stock
  • 1000:$1.9536
  • 500:$2.3165
  • 100:$2.7211
  • 10:$3.3210
  • 1:$3.7000
IAUT165N08S5N029ATMA2
DISTI # IAUT165N08S5N029ATMA2TR-ND		Infineon Technologies AGMOSFET N-CH 165A 80V 120V 8HSOF
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$1.8019
IAUT165N08S5N029ATMA2
DISTI # 29545009		Infineon Technologies AGOptiMOS 5 Power Transistor2000
  • 2000:$1.6497
IAUT165N08S5N029ATMA2
DISTI # 29722698		Infineon Technologies AGOptiMOS 5 Power Transistor1897
  • 4:$3.7202
IAUT165N08S5N029ATMA2
DISTI # SP001585162		Infineon Technologies AGOptiMOS 80V 165A HSOF-8 (Alt: SP001585162)
RoHS: Compliant
Min Qty: 2000		Europe - 4000
  • 20000:€1.3900
  • 12000:€1.4900
  • 8000:€1.5900
  • 4000:€1.6900
  • 2000:€1.7900
IAUT165N08S5N029ATMA2
DISTI # IAUT165N08S5N029ATMA2		Infineon Technologies AGOptiMOS 80V 165A HSOF-8 - Tape and Reel (Alt: IAUT165N08S5N029ATMA2)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 12000:$1.5900
  • 20000:$1.5900
  • 4000:$1.6900
  • 8000:$1.6900
  • 2000:$1.7900
IAUT165N08S5N029ATMA2
DISTI # 59AC7031		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:165A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0024ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes1900
  • 1000:$1.8200
  • 500:$2.1600
  • 250:$2.4000
  • 100:$2.5400
  • 50:$2.6700
  • 25:$2.8000
  • 10:$2.9300
  • 1:$3.4400
IAUT165N08S5N029ATMA2
DISTI # 726-IAUT165N08S5N029		Infineon Technologies AGMOSFET MOSFET_(75V,120V(
RoHS: Compliant		2076
  • 1:$3.4100
  • 10:$2.9000
  • 100:$2.5100
  • 250:$2.3800
  • 500:$2.1400
  • 1000:$1.8000
  • 2000:$1.7100
  • 4000:$1.6500
IAUT165N08S5N029ATMA2
DISTI # XSKDRABV0021062		Infineon Technologies AG 
RoHS: Compliant		6000 in Stock0 on Order
  • 6000:$2.3100
  • 2000:$2.4700
IAUT165N08S5N029ATMA2
DISTI # 2888476		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, HSOF
RoHS: Compliant		1900
  • 1000:$2.6400
  • 500:$2.6900
  • 250:$2.8400
  • 100:$3.0000
  • 10:$3.3900
  • 1:$3.6300
IAUT165N08S5N029ATMA2
DISTI # 2888476		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, HSOF1790
  • 500:£1.5000
  • 250:£1.8200
  • 100:£1.8500
  • 10:£2.2100
  • 1:£2.8300
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Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de IAUT165N08S5N029ATMA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,41 US$
3,41 US$
10
2,90 US$
29,00 US$
100
2,51 US$
251,00 US$
250
2,38 US$
595,00 US$
500
2,14 US$
1 070,00 US$
1000
1,80 US$
1 800,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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