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IAUT240N08S5N019ATMA1

IAUT240N08S5N019ATMA1
Mfr. #:
IAUT240N08S5N019ATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET MOSFET_(75V,120V(
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IAUT240N08S5N019ATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IAUT240N08S5N019ATMA1 DatasheetIAUT240N08S5N019ATMA1 Datasheet (P4-P6)IAUT240N08S5N019ATMA1 Datasheet (P7-P9)
ECAD Model:
Más información:
IAUT240N08S5N019ATMA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
HSOF-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
80 V
Id - Corriente de drenaje continua:
240 A
Rds On - Resistencia de la fuente de drenaje:
3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.2 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
130 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
230 W
Configuración:
Único
Modo de canal:
Mejora
Calificación:
AEC-Q101
Embalaje:
Carrete
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
36 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35 ns
Tiempo típico de retardo de encendido:
18 ns
Parte # Alias:
IAUT240N08S5N019 SP001685094
Tags
IAUT2, IAUT, IAU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS-5 N-channel Enhancement mode Power Transistor 1.9mΩ 230W 80V PG-HSOF-8 T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green product (RoHS compliant); Ultra low Rds(on); 100% Avalanche tested
***ark
Mosfet, Aec-Q101, N-Ch, 80V, Hsof; Transistor Polarity:n Channel; Continuous Drain Current Id:240A; Drain Source Voltage Vds:80V; On Resistance Rds(On):0.0015Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
75V to 100V N-Channel Automotive MOSFETs
Infineon Technologies 75V to 100V N-Channel Automotive MOSFETs are AEC-Q101 qualified for automotive applications, and available in a wide range of package types, including D-PAK, TOLL (HSOF-8),  TOLG (HSOG-8), and SSO8 (TDSON-8). These MOSFETs are ideal for fuel injection systems, in-vehicle wireless charging applications, and the C02 emission-reducing 48V power subsystem known as Board Net.
Parte # Mfg. Descripción Valores Precio
IAUT240N08S5N019ATMA1
DISTI # V72:2272_18786353		Infineon Technologies AGOptiMOS-5 Power-Transistor411
  • 250:$3.1560
  • 100:$3.4630
  • 25:$3.8190
  • 10:$3.9850
  • 1:$5.1502
IAUT240N08S5N019ATMA1
DISTI # V36:1790_18786353		Infineon Technologies AGOptiMOS-5 Power-Transistor0
  • 2000000:$2.0800
  • 1000000:$2.0820
  • 200000:$2.2230
  • 20000:$2.4530
  • 2000:$2.4900
IAUT240N08S5N019ATMA1
DISTI # IAUT240N08S5N019ATMA1CT-ND		Infineon Technologies AGMOSFET N-CH 75V 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1872In Stock
  • 1000:$2.7030
  • 500:$3.2050
  • 100:$3.7649
  • 10:$4.5950
  • 1:$5.1200
IAUT240N08S5N019ATMA1
DISTI # IAUT240N08S5N019ATMA1DKR-ND		Infineon Technologies AGMOSFET N-CH 75V 8HSOF
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1872In Stock
  • 1000:$2.7030
  • 500:$3.2050
  • 100:$3.7649
  • 10:$4.5950
  • 1:$5.1200
IAUT240N08S5N019ATMA1
DISTI # IAUT240N08S5N019ATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 75V 8HSOF
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$2.4930
IAUT240N08S5N019ATMA1
DISTI # 29717884		Infineon Technologies AGOptiMOS-5 Power-Transistor411
  • 3:$5.1502
IAUT240N08S5N019ATMA1
DISTI # IAUT240N08S5N019ATMA1		Infineon Technologies AGOptiMOS-5 N-channel Enhancement mode Power Transistor 1.9mΩ 230W 80V PG-HSOF-8 T/R - Tape and Reel (Alt: IAUT240N08S5N019ATMA1)
RoHS: Compliant
Min Qty: 2000
Container: Reel		Americas - 2000
  • 12000:$2.1900
  • 20000:$2.1900
  • 4000:$2.2900
  • 8000:$2.2900
  • 2000:$2.3900
IAUT240N08S5N019ATMA1
DISTI # SP001685094		Infineon Technologies AGOptiMOS-5 N-channel Enhancement mode Power Transistor 1.9mΩ 230W 80V PG-HSOF-8 T/R (Alt: SP001685094)
RoHS: Compliant
Min Qty: 2000
Container: Tape and Reel		Europe - 4000
  • 20000:€2.0900
  • 12000:€2.2900
  • 8000:€2.3900
  • 4000:€2.5900
  • 2000:€3.1900
IAUT240N08S5N019ATMA1
DISTI # 59AC7033		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, HSOF,Transistor Polarity:N Channel,Continuous Drain Current Id:240A,Drain Source Voltage Vds:80V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes773
  • 1000:$2.5300
  • 500:$2.9900
  • 250:$3.3300
  • 100:$3.5100
  • 50:$3.6900
  • 25:$3.8700
  • 10:$4.0500
  • 1:$4.7700
IAUT240N08S5N019ATMA1
DISTI # 726-IAUT240N08S5N019		Infineon Technologies AGMOSFET MOSFET_(75V,120V(
RoHS: Compliant		3523
  • 1:$4.7200
  • 10:$4.0100
  • 100:$3.4800
  • 250:$3.3000
  • 500:$2.9600
  • 1000:$2.5000
  • 2000:$2.3700
IAUT240N08S5N019ATMA1
DISTI # XSKDRABV0021064		Infineon Technologies AG 
RoHS: Compliant		6000 in Stock0 on Order
  • 6000:$3.1900
  • 2000:$3.4200
IAUT240N08S5N019ATMA1
DISTI # 2888478		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, HSOF1275
  • 500:£2.2700
  • 250:£2.5500
  • 100:£2.6900
  • 10:£3.0900
  • 1:£4.0500
IAUT240N08S5N019ATMA1
DISTI # 2888478		Infineon Technologies AGMOSFET, AEC-Q101, N-CH, 80V, HSOF
RoHS: Compliant		763
  • 1000:$3.6500
  • 500:$3.7300
  • 250:$3.9300
  • 100:$4.1600
  • 10:$4.7000
  • 1:$5.0200
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Disponibilidad
Valores:
Available
En orden:
1986
Ingrese la cantidad:
El precio actual de IAUT240N08S5N019ATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,72 US$
4,72 US$
10
4,01 US$
40,10 US$
100
3,48 US$
348,00 US$
250
3,30 US$
825,00 US$
500
2,96 US$
1 480,00 US$
1000
2,50 US$
2 500,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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