CGH40120F

CGH40120F
Mfr. #:
CGH40120F
Fabricante:
N/A
Descripción:
RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CGH40120F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CGH40120F más información
Atributo del producto
Valor de atributo
Fabricante
Cree
categoria de producto
Chips de IC
embalaje
Tubo
Estilo de montaje
Tornillo
Rango de temperatura de funcionamiento
-
Paquete-Estuche
440193
Tecnología
GaN SiC
Configuración
Único
Tipo transistor
HEMT
Ganar
19 dB
Clase
-
Potencia de salida
120 W
Disipación de potencia Pd
-
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Solicitud
-
Frecuencia de operación
1 GHz to 2.5 GHz
Id-corriente-de-drenaje-continua
12 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Resistencia a la fuente de desagüe de Rds
-
Polaridad del transistor
Canal N
Transconductancia directa-Mín.
-
Kit de desarrollo
CGH40120F-TB
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Tensión de corte de fuente de puerta
-
Voltaje de puerta de drenaje máximo
-
Figura de ruido NF
-
P1dB-Punto de compresión
-
Tags
CGH4012, CGH401, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
RF MOSFET HEMT 28V 440193
***hardson RFPD
RF POWER TRANSISTOR
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Parte # Mfg. Descripción Valores Precio
CGH40120F
DISTI # CGH40120F-ND
WolfspeedRF MOSFET HEMT 28V 440193
RoHS: Compliant
Min Qty: 1
Container: Tray
629In Stock
  • 1:$302.8500
CGH40120F-TB
DISTI # CGH40120F-TB-ND
WolfspeedBOARD DEMO AMP CIRCUIT CGH40120
RoHS: Not compliant
Min Qty: 1
Container: Bulk
Temporarily Out of Stock
  • 1:$550.0000
CGH40120F
DISTI # 941-CGH40120F
Cree, Inc.RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt
RoHS: Compliant
167
  • 1:$302.8500
CGH40120F-TB
DISTI # 941-CGH40120F-TB
Cree, Inc.RF Development Tools Test Board without GaN HEMT
RoHS: Not compliant
2
  • 1:$550.0000
CGH40120F
DISTI # CGH40120F
WolfspeedRF POWER TRANSISTOR
RoHS: Compliant
100
  • 1:$302.8500
CGH40120F-TB
DISTI # CGH40120F-TB
WolfspeedRF TRANSISTOR TEST FIXTURE
RoHS: Compliant
0
  • 2:$550.0000
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Mfr.#: CGH40006P

OMO.#: OMO-CGH40006P

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CGH40090PP-TB

Mfr.#: CGH40090PP-TB

OMO.#: OMO-CGH40090PP-TB

RF Development Tools Test Board without GaN HEMT
CGH492T350W5L

Mfr.#: CGH492T350W5L

OMO.#: OMO-CGH492T350W5L

Aluminum Electrolytic Capacitors - Screw Terminal 4900uF 350V-10+50%
CGH40010F-TB

Mfr.#: CGH40010F-TB

OMO.#: OMO-CGH40010F-TB

RF Development Tools Test Board without GaN HEMT
CGH40006P-TB

Mfr.#: CGH40006P-TB

OMO.#: OMO-CGH40006P-TB-WOLFSPEED

BOARD DEMO AMP CIRCUIT CGH40006P
CGH40045

Mfr.#: CGH40045

OMO.#: OMO-CGH40045-1190

Nuevo y original
CGH40025F

Mfr.#: CGH40025F

OMO.#: OMO-CGH40025F-WOLFSPEED

RF JFET Transistors DC-6GHz 28V 25W Gain 13dB GaN HEMT
CGH40045F

Mfr.#: CGH40045F

OMO.#: OMO-CGH40045F-WOLFSPEED

RF JFET Transistors DC-4GHz 28V 45W Gain 14dB GaN HEMT
CGH482T450X5L

Mfr.#: CGH482T450X5L

OMO.#: OMO-CGH482T450X5L-CORNELL-DUBILIER-ELECTRONICS

Aluminum Electrolytic Capacitors - Screw Terminal 4800uF 450V-10+50%
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de CGH40120F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
454,28 US$
454,28 US$
10
431,56 US$
4 315,61 US$
100
408,85 US$
40 884,75 US$
500
386,13 US$
193 066,90 US$
1000
363,42 US$
363 420,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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