CGH40045F

CGH40045F
Mfr. #:
CGH40045F
Fabricante:
N/A
Descripción:
RF JFET Transistors DC-4GHz 28V 45W Gain 14dB GaN HEMT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
CGH40045F Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
CGH40045F más información
Atributo del producto
Valor de atributo
Fabricante
Cree
categoria de producto
Chips de IC
embalaje
Tubo
Estilo de montaje
Tornillo
Rango de temperatura de funcionamiento
-
Paquete-Estuche
440193
Tecnología
GaN SiC
Configuración
Único
Tipo transistor
HEMT
Ganar
14 dB
Clase
-
Potencia de salida
55 W
Disipación de potencia Pd
-
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Solicitud
-
Frecuencia de operación
2 GHz to 4 GHz
Id-corriente-de-drenaje-continua
6 A
Vds-Drain-Source-Breakdown-Voltage
120 V
Vgs-th-Gate-Source-Threshold-Voltage
- 3 V
Resistencia a la fuente de desagüe de Rds
-
Polaridad del transistor
Canal N
Transconductancia directa-Mín.
-
Kit de desarrollo
CGH40045F-TB
Vgs-Gate-Source-Breakdown-Voltage
- 10 V to + 2 V
Tensión de corte de fuente de puerta
-
Voltaje de puerta de drenaje máximo
-
Figura de ruido NF
-
P1dB-Punto de compresión
-
Tags
CGH40045F, CGH4004, CGH400, CGH40, CGH4, CGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
GaN HEMTs
Cree GaN (Gallium Nitride) HEMTs (High Electron Mobility Transistors) offers greater power density and wider bandwidths compared to Si and GaAs transistors. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity, and higher thermal conductivity.
Parte # Mfg. Descripción Valores Precio
CGH40045F
DISTI # V36:1790_22404196
Cree, Inc.Trans FET N-CH 84V GaN HEMT 3-Pin Case 4401930
    CGH40045F
    DISTI # CGH40045F-ND
    WolfspeedRF MOSFET HEMT 28V 440193
    RoHS: Compliant
    Min Qty: 1
    Container: Tray
    659In Stock
    • 1:$148.6800
    CGH40045F-TB
    DISTI # CGH40045F-TB-ND
    WolfspeedBOARD DEMO AMP CIRCUIT CGH40045
    RoHS: Not compliant
    Min Qty: 1
    Container: Bulk
    1In Stock
    • 1:$550.0000
    CGH40045F
    DISTI # 941-CGH40045F
    Cree, Inc.RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt
    RoHS: Compliant
    119
    • 1:$166.8200
    CGH40045F-TB
    DISTI # 941-CGH40045F-TB
    Cree, Inc.RF Development Tools Test Board without GaN HEMT
    RoHS: Not compliant
    2
    • 1:$632.5000
    CGH40045FCree, Inc. 20
      CGH40045F
      DISTI # CGH40045F
      WolfspeedRF POWER TRANSISTOR
      RoHS: Compliant
      107
      • 1:$182.3800
      CGH40045F-TB
      DISTI # CGH40045F-TB
      WolfspeedRF TRANSISTOR TEST FIXTURE
      RoHS: Compliant
      2
      • 1:$632.5000
      Imagen Parte # Descripción
      CGH40006P

      Mfr.#: CGH40006P

      OMO.#: OMO-CGH40006P

      RF JFET Transistors GaN HEMT DC-6.0GHz, 6 Watt
      CGH40045F

      Mfr.#: CGH40045F

      OMO.#: OMO-CGH40045F

      RF JFET Transistors GaN HEMT DC-4.0GHz, 45 Watt
      CGH40035F-TB

      Mfr.#: CGH40035F-TB

      OMO.#: OMO-CGH40035F-TB

      RF Development Tools Test Board without GaN HEMT
      CGH40045F-TB

      Mfr.#: CGH40045F-TB

      OMO.#: OMO-CGH40045F-TB

      RF Development Tools Test Board without GaN HEMT
      CGH40006P-TB

      Mfr.#: CGH40006P-TB

      OMO.#: OMO-CGH40006P-TB-WOLFSPEED

      BOARD DEMO AMP CIRCUIT CGH40006P
      CGH40045F-TB

      Mfr.#: CGH40045F-TB

      OMO.#: OMO-CGH40045F-TB-WOLFSPEED

      BOARD DEMO AMP CIRCUIT CGH40045
      CGH40045F/P

      Mfr.#: CGH40045F/P

      OMO.#: OMO-CGH40045F-P-1190

      Nuevo y original
      CGH40090F

      Mfr.#: CGH40090F

      OMO.#: OMO-CGH40090F-1190

      Nuevo y original
      CGH40035F

      Mfr.#: CGH40035F

      OMO.#: OMO-CGH40035F-WOLFSPEED

      RF JFET Transistors DC-6GHz 28V 35W Gain 14dB GaN HEMT
      CGH40045F

      Mfr.#: CGH40045F

      OMO.#: OMO-CGH40045F-WOLFSPEED

      RF JFET Transistors DC-4GHz 28V 45W Gain 14dB GaN HEMT
      Disponibilidad
      Valores:
      Available
      En orden:
      4000
      Ingrese la cantidad:
      El precio actual de CGH40045F es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      223,02 US$
      223,02 US$
      10
      211,87 US$
      2 118,69 US$
      100
      200,72 US$
      20 071,80 US$
      500
      189,57 US$
      94 783,50 US$
      1000
      178,42 US$
      178 416,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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