CGH4012 stock, CGH4012, CGH40120F


PartNumber	CGH40120F	CGH40120P	CGH40120F-TB
Description	RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt	RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt	BOARD DEMO AMP CIRCUIT CGH40120
Manufacturer	Cree, Inc.	Cree, Inc.	-
Product Category	RF JFET Transistors	RF JFET Transistors	-
RoHS	Y	Y	-
Transistor Type	HEMT	-	-
Technology	GaN	GaN	-
Gain	19 dB	-	-
Transistor Polarity	N-Channel	-	-
Vds Drain Source Breakdown Voltage	120 V	-	-
Vgs Gate Source Breakdown Voltage	- 10 V to 2 V	-	-
Id Continuous Drain Current	12 A	-	-
Output Power	120 W	-	-
Maximum Drain Gate Voltage	-	-	-
Minimum Operating Temperature	- 40 C	-	-
Maximum Operating Temperature	+ 150 C	-	-
Pd Power Dissipation	-	-	-
Mounting Style	Screw Mount	-	-
Package / Case	440193	-	-
Packaging	Tube	Tube	-
Application	-	-	-
Configuration	Single	-	-
Height	4.19 mm	-	-
Length	20.45 mm	-	-
Operating Frequency	1 GHz to 2.5 GHz	-	-
Operating Temperature Range	-	-	-
Product	GaN HEMT	-	-
Width	5.97 mm	-	-
Brand	Wolfspeed / Cree	Wolfspeed / Cree	-
Forward Transconductance Min	-	-	-
Gate Source Cutoff Voltage	-	-	-
Class	-	-	-
Development Kit	CGH40120F-TB	-	-
Fall Time	-	-	-
NF Noise Figure	-	-	-
P1dB Compression Point	-	-	-
Product Type	RF JFET Transistors	RF JFET Transistors	-
Rds On Drain Source Resistance	-	-	-
Rise Time	-	-	-
Factory Pack Quantity	100	250	-
Subcategory	Transistors	Transistors	-
Typical Turn Off Delay Time	-	-	-
Vgs th Gate Source Threshold Voltage	- 3 V	-	-

Search Part Number : "CGH4012", Match & Start with "CGH4012" - Total : 5

Fabricante	Parte #	Descripción
N/A	CGH40120F	RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt
	CGH40120P	RF JFET Transistors GaN HEMT DC-2.5GHz, 120 Watt
	CGH40120F-TB	BOARD DEMO AMP CIRCUIT CGH40120
	CGH40120F	RF JFET Transistors DC-2.5GHz 28V 120W Gain 19dB GaN HEMT
	CGH40120P	Trans FET N-CH 84V 12A GaN HEMT

CGH4012