FQI4N80TU

FQI4N80TU
Mfr. #:
FQI4N80TU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 800V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQI4N80TU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-262-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
3.9 A
Rds On - Resistencia de la fuente de drenaje:
2.8 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.13 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
7.88 mm
Longitud:
10.29 mm
Serie:
FQI4N80
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.83 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
3.8 S
Otoño:
35 ns
Tipo de producto:
MOSFET
Hora de levantarse:
45 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
35 ns
Tiempo típico de retardo de encendido:
16 ns
Unidad de peso:
0.073511 oz
Tags
FQI4N8, FQI4N, FQI4, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
N-Channel Power MOSFET, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK
***nell
MOSFET, N, TO-262; Transistor type:Enhancement; Voltage, Vds typ:800V; Current, Id cont:3.9A; Resistance, Rds on:3.6ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-262; Current, Idm pulse:15.6A; Pins, No. of:3; Power dissipation:3.13W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:800V; Voltage, Vgs th max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Parte # Mfg. Descripción Valores Precio
FQI4N80TU
DISTI # 31271928
ON SemiconductorC00V N-CHANNEL QFET1000
  • 10000:$0.8198
  • 5000:$0.8534
  • 2500:$0.8861
  • 1000:$0.9514
FQI4N80TU
DISTI # 26637390
ON SemiconductorC00V N-CHANNEL QFET1000
  • 1000:$1.0050
FQI4N80TU
DISTI # FQI4N80TU-ND
ON SemiconductorMOSFET N-CH 800V 3.9A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.0895
FQI4N80TU
DISTI # C1S541901511465
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Tube
RoHS: Compliant
1000
  • 1000:$1.0200
FQI4N80TU
DISTI # FQI4N80TU
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N80TU)
RoHS: Compliant
Min Qty: 1000
Container: Tube
Americas - 0
  • 1000:$0.7759
  • 2000:$0.7709
  • 4000:$0.7609
  • 6000:$0.7509
  • 10000:$0.7329
FQI4N80TU
DISTI # FQI4N80TU
ON SemiconductorTrans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N80TU)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.0529
  • 10:€0.9569
  • 25:€0.8779
  • 50:€0.8419
  • 100:€0.8099
  • 500:€0.7799
  • 1000:€0.7519
FQI4N80TU
DISTI # 82C4155
ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,3.9A I(D),TO-262AA ROHS COMPLIANT: YES0
  • 1:$2.3900
  • 10:$1.8500
  • 100:$1.4400
  • 1000:$0.9570
  • 2000:$0.9500
  • 10000:$0.8950
  • 24000:$0.8680
  • 50000:$0.8470
FQI4N80TU
DISTI # 512-FQI4N80TU
ON SemiconductorMOSFET 800V N-Channel QFET
RoHS: Compliant
797
  • 1:$2.0100
  • 10:$1.7100
  • 100:$1.3700
  • 500:$1.2000
  • 1000:$0.9910
  • 2500:$0.9230
  • 5000:$0.8890
FQI4N80TUFairchild Semiconductor CorporationPower Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
1550
  • 1000:$1.3000
  • 500:$1.3700
  • 100:$1.4300
  • 25:$1.4900
  • 1:$1.6000
Imagen Parte # Descripción
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Mfr.#: FQI4N90TU

OMO.#: OMO-FQI4N90TU

MOSFET 900V N-Channel QFET
FQI4N80TU

Mfr.#: FQI4N80TU

OMO.#: OMO-FQI4N80TU

MOSFET 800V N-Channel QFET
FQI46N15

Mfr.#: FQI46N15

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Mfr.#: FQI47P06

OMO.#: OMO-FQI47P06-1190

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FQI4N20TM

Mfr.#: FQI4N20TM

OMO.#: OMO-FQI4N20TM-1190

Nuevo y original
FQI4N20TU

Mfr.#: FQI4N20TU

OMO.#: OMO-FQI4N20TU-ON-SEMICONDUCTOR

MOSFET N-CH 200V 3.6A I2PAK
FQI4N80C

Mfr.#: FQI4N80C

OMO.#: OMO-FQI4N80C-1190

Nuevo y original
FQI4N80TUFSC

Mfr.#: FQI4N80TUFSC

OMO.#: OMO-FQI4N80TUFSC-1190

Nuevo y original
FQI4P40

Mfr.#: FQI4P40

OMO.#: OMO-FQI4P40-1190

Nuevo y original
FQI4P40TUFSC

Mfr.#: FQI4P40TUFSC

OMO.#: OMO-FQI4P40TUFSC-1190

Nuevo y original
Disponibilidad
Valores:
212
En orden:
2195
Ingrese la cantidad:
El precio actual de FQI4N80TU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,69 US$
1,69 US$
10
1,44 US$
14,40 US$
100
1,15 US$
115,00 US$
500
1,01 US$
505,00 US$
1000
0,84 US$
837,00 US$
2000
0,78 US$
1 560,00 US$
5000
0,75 US$
3 755,00 US$
10000
0,72 US$
7 220,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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