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FQI4N90TU

FQI4N90TU
Mfr. #:
FQI4N90TU
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET 900V N-Channel QFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FQI4N90TU Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-262-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
900 V
Id - Corriente de drenaje continua:
4.2 A
Rds On - Resistencia de la fuente de drenaje:
3.3 Ohms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
3.13 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Altura:
7.88 mm
Longitud:
10.29 mm
Serie:
FQI4N90
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.83 mm
Marca:
ON Semiconductor / Fairchild
Transconductancia directa - Mín .:
3.5 S
Otoño:
40 ns
Tipo de producto:
MOSFET
Hora de levantarse:
70 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
45 ns
Tiempo típico de retardo de encendido:
25 ns
Parte # Alias:
FQI4N90TU_NL
Unidad de peso:
0.073511 oz
Tags
FQI4N, FQI4, FQI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
Transistor,mosfet,n-Channel,900V V(Br)Dss,4.2A I(D),to-262Aa Rohs Compliant: Yes
***emi
N-Channel Power MOSFET, QFET®, 900 V, 4.2 A, 3.3 Ω, I2PAK
***r Electronics
Power Field-Effect Transistor, 4.2A I(D), 900V, 3.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***el Electronic
Trans MOSFET N-CH 800V 4.8A 3-Pin(3+Tab) I2PAK Rail
***i-Key
MOSFET N-CH 800V 4.8A I2PAK
*** Electronics
N-CHANNEL POWER MOSFET
***ser
MOSFETs 800V N-Channel QFET
***emi
N-Channel Power MOSFET, QFET®, 800 V, 3.9 A, 3.6 Ω, I2PAK
***r Electronics
Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***nell
MOSFET, N, TO-262; Transistor type:Enhancement; Voltage, Vds typ:800V; Current, Id cont:3.9A; Resistance, Rds on:3.6ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-262; Current, Idm pulse:15.6A; Pins, No. of:3; Power dissipation:3.13W; Termination Type:Through Hole; Transistor polarity:N; Voltage, Vds max:800V; Voltage, Vgs th max:5V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
***i-Key
MOSFET N-CH 800V 3A I2PAK
*** Services
CoC and 2-years warranty / RFQ for pricing
***el Electronic
IC SUPERVISOR 1 CHANNEL 3SSOP
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***ser
MOSFETs 800V N-Channel QFET
***icroelectronics
N-channel 800 V, 1.5 Ohm typ., 5.2 A Zener-protected SuperMESH Power MOSFET in an I2PAK package
***et
Trans MOSFET N-CH 800V 5.2A 3-Pin(3+Tab) I2PAK Tube
***ponent Stockers USA
5.2 A 800 V 1.8 ohm N-CHANNEL Si POWER MOSFET TO-262AA
*** Electronic Components
MOSFET N-Ch, 800V-1.5ohms Zener SuperMESH 5.2A
***r Electronics
Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
***icroelectronics SCT
Power MOSFETs, 800V, 5.2A, I2PAK, Tube
***icroelectronics
N-channel 800 V, 1.3 Ohm typ., 4.5 A MDmesh K5 Power MOSFET in I2PAKFP package
***r Electronics
Power Field-Effect Transistor, 4.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 800V 4.5A 3-Pin(3+Tab) I2PAKFP Tube
***el Electronic
IC MODULATR D-S CUR-SHNT 16-QFN
***ure Electronics
Single N-Channel 800 V 3 Ohms Surface Mount Power Mosfet - TO-262
***ical
Trans MOSFET N-CH 800V 4.1A 3-Pin(3+Tab) TO-262
***id Electronics
VISHAY SEMICONDUCTOR IRFBE30LPBF
Parte # Mfg. Descripción Valores Precio
FQI4N90TU
DISTI # FQI4N90TU-ND		ON SemiconductorMOSFET N-CH 900V 4.2A I2PAK
RoHS: Compliant
Min Qty: 1000
Container: Tube		Temporarily Out of Stock
  • 1000:$1.2447
FQI4N90TU
DISTI # FQI4N90TU		ON SemiconductorTrans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail (Alt: FQI4N90TU)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1:€1.2029
  • 10:€1.0939
  • 25:€1.0029
  • 50:€0.9629
  • 100:€0.9259
  • 500:€0.8909
  • 1000:€0.8589
FQI4N90TU
DISTI # FQI4N90TU		ON SemiconductorTrans MOSFET N-CH 900V 4.2A 3-Pin(3+Tab) I2PAK Rail - Rail/Tube (Alt: FQI4N90TU)
RoHS: Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 1000:$0.8869
  • 2000:$0.8809
  • 4000:$0.8699
  • 6000:$0.8579
  • 10000:$0.8369
FQI4N90TU
DISTI # 82C4156		ON SemiconductorTRANSISTOR,MOSFET,N-CHANNEL,900V V(BR)DSS,4.2A I(D),TO-262AA ROHS COMPLIANT: YES0
  • 5000:$1.0200
  • 2500:$1.0500
  • 1000:$1.3000
  • 500:$1.4500
  • 100:$1.5600
  • 10:$1.9500
  • 1:$2.2900
FQI4N90TUON Semiconductor 
RoHS: Not Compliant		9000
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
FQI4N90TUFairchild Semiconductor Corporation 
RoHS: Not Compliant		842
  • 1000:$1.6200
  • 500:$1.7000
  • 100:$1.7700
  • 25:$1.8500
  • 1:$1.9900
FQI4N90TU
DISTI # 512-FQI4N90TU		ON SemiconductorMOSFET 900V N-Channel QFET
RoHS: Compliant		287
  • 1:$2.5000
  • 10:$2.1300
  • 100:$1.7000
  • 500:$1.4900
  • 1000:$1.2400
  • 2500:$1.1500
  • 5000:$1.1100
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Disponibilidad
Valores:
287
En orden:
2270
Ingrese la cantidad:
El precio actual de FQI4N90TU es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,98 US$
1,98 US$
10
1,68 US$
16,80 US$
100
1,35 US$
135,00 US$
500
1,18 US$
590,00 US$
1000
0,98 US$
978,00 US$
2000
0,91 US$
1 822,00 US$
5000
0,88 US$
4 385,00 US$
10000
0,84 US$
8 440,00 US$
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