SUD23N06-31-GE3

SUD23N06-31-GE3
Mfr. #:
SUD23N06-31-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET N-Ch MOSFET 60V 31 mohm @ 10V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SUD23N06-31-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SUD23N06-31-GE3 DatasheetSUD23N06-31-GE3 Datasheet (P4-P6)SUD23N06-31-GE3 Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
21.4 A
Rds On - Resistencia de la fuente de drenaje:
31 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
11 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
31.25 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
2.38 mm
Longitud:
6.73 mm
Serie:
SUD
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
20 S
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
8 ns
Unidad de peso:
0.050717 oz
Tags
SUD23N06-3, SUD23, SUD2, SUD
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
MOSFET; Power; N-Ch; VDSS 60V; RDS(ON) 0.025Ohm; ID 25A; TO-252; PD 50W; VGS +/-20V; -55
***ure Electronics
Single N-Channel 60 V 0.031 Ohms Surface Mount Power Mosfet - TO-252
***roFlash
Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
***nell
MOSFET, N-CH, 60V, 21.4A, TO-252AA; Transistor Polarity: N Channel; Continuous Drain Current Id: 21.4A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 31.25W; Transistor Case Style: TO-252AA; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)
Parte # Mfg. Descripción Valores Precio
SUD23N06-31-GE3
DISTI # V72:2272_09215445
Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK
RoHS: Compliant
988
  • 500:$0.6278
  • 250:$0.6642
  • 100:$0.7380
  • 25:$0.8636
  • 10:$1.0555
  • 1:$1.2669
SUD23N06-31-GE3
DISTI # V36:1790_09215445
Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK
RoHS: Compliant
0
  • 2000000:$0.4581
  • 1000000:$0.4583
  • 200000:$0.4710
  • 20000:$0.4907
  • 2000:$0.4939
SUD23N06-31-GE3
DISTI # SUD23N06-31-GE3CT-ND
Vishay SiliconixMOSFET N-CH 60V 21.4A TO-252
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5233In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SUD23N06-31-GE3
DISTI # SUD23N06-31-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 60V 21.4A TO-252
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5233In Stock
  • 1000:$0.4542
  • 500:$0.5754
  • 100:$0.6965
  • 10:$0.8930
  • 1:$1.0000
SUD23N06-31-GE3
DISTI # SUD23N06-31-GE3TR-ND
Vishay SiliconixMOSFET N-CH 60V 21.4A TO-252
RoHS: Compliant
Min Qty: 2000
Container: Tape & Reel (TR)
4000In Stock
  • 10000:$0.3763
  • 6000:$0.3910
  • 2000:$0.4116
SUD23N06-31-GE3
DISTI # 32825670
Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK
RoHS: Compliant
2000
  • 2000:$0.3376
SUD23N06-31-GE3
DISTI # 30601689
Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK
RoHS: Compliant
2000
  • 22:$1.1862
SUD23N06-31-GE3
DISTI # 32324221
Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK
RoHS: Compliant
988
  • 17:$1.2669
SUD23N06-31-GE3
DISTI # SUD23N06-31-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK - Cut TR (SOS) (Alt: SUD23N06-31-GE3)
RoHS: Compliant
Min Qty: 1
Container: Cut Tape
Americas - 950
  • 1500:$0.3731
  • 750:$0.3846
  • 375:$0.3968
  • 188:$0.4098
  • 94:$0.4237
  • 47:$0.4386
  • 1:$0.4546
SUD23N06-31-GE3
DISTI # SUD23N06-31-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK - Tape and Reel (Alt: SUD23N06-31-GE3)
RoHS: Compliant
Min Qty: 2000
Container: Reel
Americas - 6000
  • 20000:$0.3199
  • 12000:$0.3289
  • 8000:$0.3379
  • 4000:$0.3529
  • 2000:$0.3629
SUD23N06-31-GE3
DISTI # SUD23N06-31-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK (Alt: SUD23N06-31-GE3)
RoHS: Compliant
Min Qty: 2000
Europe - 0
  • 20000:€0.3119
  • 12000:€0.3349
  • 8000:€0.3629
  • 4000:€0.4219
  • 2000:€0.6179
SUD23N06-31-GE3
DISTI # 16P3889
Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK - Product that comes on tape, but is not reeled (Alt: 16P3889)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack
Americas - 0
  • 500:$0.5330
  • 250:$0.5760
  • 100:$0.6190
  • 50:$0.6820
  • 25:$0.7440
  • 10:$0.8070
  • 1:$0.9800
SUD23N06-31-GE3
DISTI # 16P3889
Vishay IntertechnologiesN CHANNEL MOSFET, 60V, 9.1A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:9.1A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.045ohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:3V RoHS Compliant: Yes1990
  • 500:$0.5380
  • 250:$0.5820
  • 100:$0.6250
  • 50:$0.6880
  • 25:$0.7520
  • 10:$0.8150
  • 1:$0.9900
SUD23N06-31-GE3
DISTI # 05AC9528
Vishay IntertechnologiesMOSFET, N-CH, 60V, 21.4A, TO-252AA,Transistor Polarity:N Channel,Continuous Drain Current Id:21.4A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes6000
  • 1:$0.5460
  • 2000:$0.5460
SUD23N06-31-GE3.
DISTI # 30AC0988
Vishay IntertechnologiesMOSFET, N CHANNEL, 60V, 21.4A, TO-252-3, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:21.4A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.025ohm,Rds(on) Test Voltage Vgs:10V,No. of Pins:3Pins RoHS Compliant: Yes6000
  • 1:$0.5460
  • 2000:$0.5460
SUD23N06-31-GE3
DISTI # 70026403
Vishay SiliconixMOSFET,Power,N-Ch,VDSS 60V,RDS(ON) 0.025Ohm,ID 25A,TO-252,PD 50W,VGS +/-20V,-55
RoHS: Compliant
0
  • 2000:$0.4120
SUD23N06-31-GE3
DISTI # 781-SUD23N06-31-GE3
Vishay IntertechnologiesMOSFET N-Ch MOSFET 60V 31 mohm @ 10V
RoHS: Compliant
10236
  • 1:$0.9700
  • 10:$0.8060
  • 100:$0.6180
  • 500:$0.5320
  • 1000:$0.4190
  • 2000:$0.3910
  • 4000:$0.3720
  • 10000:$0.3580
SUD23N06-31-GE3
DISTI # 6365397P
Vishay IntertechnologiesMOSFET N-CH 60V 23A LOGIC DPAK, RL2360
  • 500:£0.4920
  • 250:£0.5000
  • 100:£0.5120
  • 25:£0.5840
SUD23N06-31-GE3
DISTI # 6365397
Vishay IntertechnologiesMOSFET N-CH 60V 23A LOGIC DPAK, PK550
  • 500:£0.4920
  • 250:£0.5000
  • 100:£0.5120
  • 25:£0.5840
  • 5:£0.8260
SUD23N06-31-GE3Vishay Intertechnologies 40
    SUD23N06-31-GE3
    DISTI # C1S803605096304
    Vishay IntertechnologiesTrans MOSFET N-CH 60V 9.1A 3-Pin(2+Tab) DPAK
    RoHS: Not Compliant
    2000
    • 2000:$0.4220
    • 1000:$0.4270
    • 500:$0.5400
    • 100:$0.6190
    • 50:$0.7370
    • 25:$0.8060
    • 5:$0.9490
    SUD23N06-31-GE3
    DISTI # 2646406
    Vishay IntertechnologiesMOSFET, N-CH, 60V, 21.4A, TO-252AA
    RoHS: Compliant
    1180
    • 2000:$0.7870
    • 500:$0.8030
    • 100:$0.9330
    • 10:$1.2200
    • 1:$1.4800
    SUD23N06-31-GE3
    DISTI # 2679716
    Vishay IntertechnologiesMOSFET, N-CH, 60V, 21.4A, TO-252AA
    RoHS: Compliant
    6000
    • 2000:$0.7760
    SUD23N06-31-GE3
    DISTI # 2679716
    Vishay IntertechnologiesMOSFET, N-CH, 60V, 21.4A, TO-252AA6000
    • 6000:£0.4060
    • 2000:£0.4070
    SUD23N06-31-GE3Vishay IntertechnologiesMOSFET N-Ch MOSFET 60V 31 mohm @ 10V
    RoHS: Compliant
    Americas - 6000
      Imagen Parte # Descripción
      NCV7344D13R2G

      Mfr.#: NCV7344D13R2G

      OMO.#: OMO-NCV7344D13R2G

      CAN Interface IC HS LP CANFD TRANSC (VIO)
      ERJ-2RKF1000X

      Mfr.#: ERJ-2RKF1000X

      OMO.#: OMO-ERJ-2RKF1000X

      Thick Film Resistors - SMD 0402 100ohms 1% AEC-Q200
      ERJ-3EKF4702V

      Mfr.#: ERJ-3EKF4702V

      OMO.#: OMO-ERJ-3EKF4702V

      Thick Film Resistors - SMD 0603 47Kohms 1% AEC-Q200
      3568

      Mfr.#: 3568

      OMO.#: OMO-3568

      Fuse Holder .63 MINI FUSE HOLDER
      ERJ-3EKF1003V

      Mfr.#: ERJ-3EKF1003V

      OMO.#: OMO-ERJ-3EKF1003V

      Thick Film Resistors - SMD 0603 100Kohms 1% AEC-Q200
      ERJ-3GEY0R00V

      Mfr.#: ERJ-3GEY0R00V

      OMO.#: OMO-ERJ-3GEY0R00V

      Thick Film Resistors - SMD 0603 Zero Ohms
      ERJ-3EKF4702V

      Mfr.#: ERJ-3EKF4702V

      OMO.#: OMO-ERJ-3EKF4702V-PANASONIC

      Thick Film Resistors - SMD 0603 47Kohms 1% Tol
      ERJ-2GE0R00X

      Mfr.#: ERJ-2GE0R00X

      OMO.#: OMO-ERJ-2GE0R00X-PANASONIC

      Thick Film Resistors - SMD 0402 Zero ohms 5% Tol
      ERJ-3GEY0R00V

      Mfr.#: ERJ-3GEY0R00V

      OMO.#: OMO-ERJ-3GEY0R00V-PANASONIC

      Thick Film Resistors - SMD 0603 Zero Ohms
      ERJ-3EKF1002V

      Mfr.#: ERJ-3EKF1002V

      OMO.#: OMO-ERJ-3EKF1002V-PANASONIC

      Thick Film Resistors - SMD 0603 10Kohms 1% Tol
      Disponibilidad
      Valores:
      Available
      En orden:
      1992
      Ingrese la cantidad:
      El precio actual de SUD23N06-31-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,97 US$
      0,97 US$
      10
      0,81 US$
      8,06 US$
      100
      0,62 US$
      61,80 US$
      500
      0,53 US$
      266,00 US$
      1000
      0,42 US$
      419,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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