PartNumber | SUD23N06-31-T4-GE3 | SUD23N06-31-GE3 | SUD23N06-31L-E3 |
Description | MOSFET N-Channel 60-V (D-S) | MOSFET N-Ch MOSFET 60V 31 mohm @ 10V | MOSFET RECOMMENDED ALT 781-SUD23N06-31-GE3 |
Manufacturer | Vishay | Vishay | Vishay |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | E |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | TO-252-3 | TO-252-3 | - |
Tradename | TrenchFET | TrenchFET | TrenchFET |
Packaging | Reel | Reel | Reel |
Height | 2.38 mm | 2.38 mm | - |
Length | 6.73 mm | 6.73 mm | - |
Series | SUD | SUD | SUD |
Width | 6.22 mm | 6.22 mm | - |
Brand | Vishay / Siliconix | Vishay / Siliconix | Vishay / Siliconix |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2000 | 2000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.050717 oz | 0.050717 oz | 0.050717 oz |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 60 V | - |
Id Continuous Drain Current | - | 21.4 A | - |
Rds On Drain Source Resistance | - | 31 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 1 V | - |
Vgs Gate Source Voltage | - | 10 V | - |
Qg Gate Charge | - | 11 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 31.25 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Forward Transconductance Min | - | 20 S | - |
Fall Time | - | 25 ns | - |
Rise Time | - | 15 ns | - |
Typical Turn Off Delay Time | - | 30 ns | - |
Typical Turn On Delay Time | - | 8 ns | - |