PartNumber | IPD78CN10NGATMA1 | IPD78CN10N G | IPD78CN10NG 78CN10N |
Description | MOSFET MV POWER MOS | Trans MOSFET N-CH 100V 13A 3-Pin(2+Tab) TO-252 | |
Manufacturer | Infineon | INFINEON | - |
Product Category | MOSFET | IC Chips | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | PG-TO-252-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 100 V | - | - |
Id Continuous Drain Current | 13 A | - | - |
Rds On Drain Source Resistance | 78 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 3 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 8 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 175 C | + 175 C | - |
Pd Power Dissipation | 31 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | OptiMOS | OptiMOS | - |
Packaging | Reel | Reel | - |
Height | 2.3 mm | - | - |
Length | 6.5 mm | - | - |
Series | OptiMOS 2 | OptiMOS 2 | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Width | 6.22 mm | - | - |
Brand | Infineon Technologies | - | - |
Forward Transconductance Min | 7 S | - | - |
Development Kit | - | - | - |
Fall Time | 3 ns | 3 ns | - |
Product Type | MOSFET | - | - |
Rise Time | 4 ns | 4 ns | - |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 13 ns | 13 ns | - |
Typical Turn On Delay Time | 9 ns | 9 ns | - |
Part # Aliases | G IPD78CN10N SP001127814 | - | - |
Unit Weight | 0.139332 oz | 0.139332 oz | - |
Part Aliases | - | IPD78CN10NGBUMA1 IPD78CN10NGXT SP000096460 | - |
Package Case | - | TO-252-3 | - |
Pd Power Dissipation | - | 31 W | - |
Vgs Gate Source Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 13 A | - |
Vds Drain Source Breakdown Voltage | - | 100 V | - |
Rds On Drain Source Resistance | - | 78 mOhms | - |