IPD78CN10NGATMA1 vs IPD78CN10N G vs IPD78CN10NG 78CN10N

 
PartNumberIPD78CN10NGATMA1IPD78CN10N GIPD78CN10NG 78CN10N
DescriptionMOSFET MV POWER MOSTrans MOSFET N-CH 100V 13A 3-Pin(2+Tab) TO-252
ManufacturerInfineonINFINEON-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CasePG-TO-252-3--
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current13 A--
Rds On Drain Source Resistance78 mOhms--
Vgs th Gate Source Threshold Voltage3 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge8 nC--
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 175 C+ 175 C-
Pd Power Dissipation31 W--
ConfigurationSingleSingle-
Channel ModeEnhancementEnhancement-
TradenameOptiMOSOptiMOS-
PackagingReelReel-
Height2.3 mm--
Length6.5 mm--
SeriesOptiMOS 2OptiMOS 2-
Transistor Type1 N-Channel1 N-Channel-
Width6.22 mm--
BrandInfineon Technologies--
Forward Transconductance Min7 S--
Development Kit---
Fall Time3 ns3 ns-
Product TypeMOSFET--
Rise Time4 ns4 ns-
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns13 ns-
Typical Turn On Delay Time9 ns9 ns-
Part # AliasesG IPD78CN10N SP001127814--
Unit Weight0.139332 oz0.139332 oz-
Part Aliases-IPD78CN10NGBUMA1 IPD78CN10NGXT SP000096460-
Package Case-TO-252-3-
Pd Power Dissipation-31 W-
Vgs Gate Source Voltage-20 V-
Id Continuous Drain Current-13 A-
Vds Drain Source Breakdown Voltage-100 V-
Rds On Drain Source Resistance-78 mOhms-
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