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SIHD6N65ET5-GE3

SIHD6N65ET5-GE3
Mfr. #:
SIHD6N65ET5-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 650V Vds E Series DPAK TO-252
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHD6N65ET5-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHD6N65ET5-GE3 DatasheetSIHD6N65ET5-GE3 Datasheet (P4-P6)SIHD6N65ET5-GE3 Datasheet (P7-P9)
ECAD Model:
Más información:
SIHD6N65ET5-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
7 A
Rds On - Resistencia de la fuente de drenaje:
500 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
24 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
78 W
Configuración:
Único
Embalaje:
Carrete
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
12 ns
Cantidad de paquete de fábrica:
2000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
30 ns
Tiempo típico de retardo de encendido:
14 ns
Unidad de peso:
0.011993 oz
Tags
SIHD6N65ET, SIHD6N65, SIHD6N6, SIHD6, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Power MOSFET N-Channel 650V 7A 3-Pin DPAK
***or
MOSFET N-CH 650V 7A TO252AA
*** Europe
N-CH SINGLE 650V TO252
***ark
N-Channel 650V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHD6N65ET5-GE3
DISTI # SIHD6N65ET5-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 7A TO252AA
RoHS: Not compliant
Min Qty: 2000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$0.7371
SIHD6N65ET5-GE3
DISTI # SIHD6N65ET5-GE3		Vishay IntertechnologiesPower MOSFET N-Channel 650V 7A 3-Pin DPAK - Tape and Reel (Alt: SIHD6N65ET5-GE3)
RoHS: Not Compliant
Min Qty: 2000
Container: Reel		Americas - 0
  • 20000:$0.6659
  • 12000:$0.6849
  • 8000:$0.7039
  • 4000:$0.7339
  • 2000:$0.7559
SIHD6N65ET5-GE3
DISTI # 78-SIHD6N65ET5-GE3		Vishay IntertechnologiesMOSFET 650V Vds E Series DPAK TO-252
RoHS: Compliant		0
  • 2000:$0.7030
  • 4000:$0.6770
  • 10000:$0.6500
Imagen Parte # Descripción
SIHD6N62E-GE3

Mfr.#: SIHD6N62E-GE3

OMO.#: OMO-SIHD6N62E-GE3

 MOSFET 620V Vds 30V Vgs DPAK (TO-252)
SIHD6N65ET1-GE3

Mfr.#: SIHD6N65ET1-GE3

OMO.#: OMO-SIHD6N65ET1-GE3

 MOSFET 650V Vds E Series DPAK TO-252
SIHD6N65ET4-GE3

Mfr.#: SIHD6N65ET4-GE3

OMO.#: OMO-SIHD6N65ET4-GE3

 MOSFET 650V Vds E Series DPAK TO-252
SIHD6N65E-GE3

Mfr.#: SIHD6N65E-GE3

OMO.#: OMO-SIHD6N65E-GE3-VISHAY

 RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
SIHD6N62E-GE3

Mfr.#: SIHD6N62E-GE3

OMO.#: OMO-SIHD6N62E-GE3-VISHAY

 RF Bipolar Transistors MOSFET 620V 900mOhm@10V 6A N-Ch E-SRS
SIHD6N62E-GE3-CUT TAPE

Mfr.#: SIHD6N62E-GE3-CUT TAPE

OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190

 Nuevo y original
SIHD6N62E

Mfr.#: SIHD6N62E

OMO.#: OMO-SIHD6N62E-1190

 Nuevo y original
SIHD6N65E

Mfr.#: SIHD6N65E

OMO.#: OMO-SIHD6N65E-1190

 Nuevo y original
SIHD6N65EGE3

Mfr.#: SIHD6N65EGE3

OMO.#: OMO-SIHD6N65EGE3-1190

 Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
SIHD6N62ET1-GE3

Mfr.#: SIHD6N62ET1-GE3

OMO.#: OMO-SIHD6N62ET1-GE3-VISHAY

 MOSFET N-CH 620V 6A TO252AA
Disponibilidad
Valores:
Available
En orden:
4000
Ingrese la cantidad:
El precio actual de SIHD6N65ET5-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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