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SIHD6N65E-GE3

SIHD6N65E-GE3
Mfr. #:
SIHD6N65E-GE3
Fabricante:
Vishay
Descripción:
RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHD6N65E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHD6N65E-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIHD6N65, SIHD6N6, SIHD6, SIHD, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
E Series N-Channel 650 V 78 W 0.6 O 48 nC Surface Mount Power Mosfet - DPAK
***ical
Trans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK
***et Europe
Trans MOSFET N-CH 650V 7A 3-Pin TO-252
***i-Key
MOSFET N-CH 650V 7A TO252
***ark
N-CHANNEL 650V
***nell
MOSFET, N-CH, 650V, 7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-252; No. of Pins:3; MSL:MSL 1 - Unlimited
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 650V, 7A, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:78W; Transistor Case Style:TO-252; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; Operating Temperature Min:-55°C
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHD6N65E-GE3
DISTI # V99:2348_09218426		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		1342
  • 3000:$0.6794
  • 1000:$0.7977
  • 500:$0.8813
  • 100:$1.0153
  • 10:$1.3180
  • 1:$1.7552
SIHD6N65E-GE3
DISTI # V36:1790_09218426		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		0
  • 3000000:$0.7090
  • 1500000:$0.7113
  • 300000:$0.8899
  • 30000:$1.1900
  • 3000:$1.2400
SIHD6N65E-GE3
DISTI # SIHD6N65E-GE3-ND		Vishay SiliconixMOSFET N-CH 650V 7A TO252
Min Qty: 1
Container: Tube		On Order
  • 5000:$0.6916
  • 2500:$0.7020
  • 500:$0.9100
  • 100:$1.1076
  • 25:$1.3000
  • 10:$1.3780
  • 1:$1.5300
SIHD6N65E-GE3
DISTI # 25872616		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin(2+Tab) DPAK
RoHS: Compliant		1342
  • 3000:$0.6794
  • 1000:$0.7977
  • 500:$0.8813
  • 100:$1.0153
  • 10:$1.3180
  • 9:$1.7552
SIHD6N65E-GE3
DISTI # SIHD6N65E-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 650V 7A 3-Pin TO-252 - Tape and Reel (Alt: SIHD6N65E-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 30000:$0.6659
  • 18000:$0.6849
  • 12000:$0.7039
  • 6000:$0.7339
  • 3000:$0.7559
SIHD6N65E-GE3
DISTI # 19X1933		Vishay IntertechnologiesMOSFET Transistor, N Channel, 7 A, 650 V, 0.5 ohm, 10 V, 2 V RoHS Compliant: Yes
RoHS: Compliant		3690
  • 500:$0.9110
  • 100:$1.0400
  • 50:$1.1400
  • 25:$1.2400
  • 10:$1.3400
  • 1:$1.6100
SIHD6N65E-GE3
DISTI # 78-SIHD6N65E-GE3		Vishay IntertechnologiesMOSFET 650V Vds 30V Vgs DPAK (TO-252)
RoHS: Compliant		1
  • 1:$1.6400
  • 10:$1.3000
  • 100:$1.0300
  • 500:$0.9110
  • 1000:$0.8840
  • 3000:$0.7430
SIHD6N65EGE3Vishay IntertechnologiesPower Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
RoHS: Compliant		Europe - 3000
    SIHD6N65E-GE3
    DISTI # 2364075    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 7A, TO-252
    RoHS: Compliant    		3800
    • 100:£0.9910
    • 10:£1.3400
    • 1:£1.7500
    SIHD6N65E-GE3
    DISTI # 2364075    		Vishay IntertechnologiesMOSFET, N-CH, 650V, 7A, TO-252
    RoHS: Compliant    		3690
    • 25:$2.0500
    • 10:$2.1700
    • 1:$2.4100
    Imagen Parte # Descripción
    SIHD6N80E-GE3

    Mfr.#: SIHD6N80E-GE3

    OMO.#: OMO-SIHD6N80E-GE3

    		 MOSFET 800V Vds 30V Vgs DPAK (TO-252)
    SIHD6N65E-GE3

    Mfr.#: SIHD6N65E-GE3

    OMO.#: OMO-SIHD6N65E-GE3

    		 MOSFET 650V Vds 30V Vgs DPAK (TO-252)
    SIHD6N62E-GE3

    Mfr.#: SIHD6N62E-GE3

    OMO.#: OMO-SIHD6N62E-GE3

    		 MOSFET 620V Vds 30V Vgs DPAK (TO-252)
    SIHD6N65ET1-GE3

    Mfr.#: SIHD6N65ET1-GE3

    OMO.#: OMO-SIHD6N65ET1-GE3

    		 MOSFET 650V Vds E Series DPAK TO-252
    SIHD6N65ET5-GE3

    Mfr.#: SIHD6N65ET5-GE3

    OMO.#: OMO-SIHD6N65ET5-GE3

    		 MOSFET 650V Vds E Series DPAK TO-252
    SIHD6N65E-GE3

    Mfr.#: SIHD6N65E-GE3

    OMO.#: OMO-SIHD6N65E-GE3-VISHAY

    		 RF Bipolar Transistors MOSFET 650V 600mOhm@10V 7A N-Ch E-SRS
    SIHD6N62E-GE3-CUT TAPE

    Mfr.#: SIHD6N62E-GE3-CUT TAPE

    OMO.#: OMO-SIHD6N62E-GE3-CUT-TAPE-1190

    		 Nuevo y original
    SIHD6N65EGE3

    Mfr.#: SIHD6N65EGE3

    OMO.#: OMO-SIHD6N65EGE3-1190

    		 Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA
    SIHD6N62ET1-GE3

    Mfr.#: SIHD6N62ET1-GE3

    OMO.#: OMO-SIHD6N62ET1-GE3-VISHAY

    		 MOSFET N-CH 620V 6A TO252AA
    SIHD6N80E-GE3

    Mfr.#: SIHD6N80E-GE3

    OMO.#: OMO-SIHD6N80E-GE3-VISHAY

    		 MOSFET N-CHAN 800V TO-252
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de SIHD6N65E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,00 US$
    1,00 US$
    10
    0,95 US$
    9,49 US$
    100
    0,90 US$
    89,90 US$
    500
    0,85 US$
    424,50 US$
    1000
    0,80 US$
    799,10 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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